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    Microchip Technology Inc DSC1123AI1-125.0000T

    MEMS OSC XO 125.0000MHZ LVDS SMD
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    DigiKey DSC1123AI1-125.0000T 986 1
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    Mouser Electronics DSC1123AI1-125.0000T 995
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    Microchip Technology Inc DSC1123AI1-125.0000T 3,989
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    NAC DSC1123AI1-125.0000T 1,000
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    Microchip Technology Inc DSC1123AI1-125.0000

    MEMS OSC XO 125.0000MHZ LVDS SMD
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    DigiKey DSC1123AI1-125.0000 Tube 157 1
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    DSC1123AI1-125.0000 1
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    Avnet Americas DSC1123AI1-125.0000 Tube 6 Weeks 300
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    Mouser Electronics DSC1123AI1-125.0000 362
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    Newark DSC1123AI1-125.0000 Bulk 300
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    Microchip Technology Inc DSC1123AI1-125.0000 3,989
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    NAC DSC1123AI1-125.0000 Tube 150
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    EBV Elektronik DSC1123AI1-125.0000 7 Weeks 50
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    Microchip Technology Inc DSC1121AI1-125.0000

    MEMS OSC XO 125.0000MHZ CMOS SMD
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    DigiKey DSC1121AI1-125.0000 1
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    Avnet Americas DSC1121AI1-125.0000 Tube 6 Weeks 650
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    Mouser Electronics DSC1121AI1-125.0000
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    Newark DSC1121AI1-125.0000 Bulk 650
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    Microchip Technology Inc DSC1121AI1-125.0000 7,528
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    NAC DSC1121AI1-125.0000 Tube 350
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    Master Electronics DSC1121AI1-125.0000
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    Microchip Technology Inc DSC1123AI1-120.0000

    MEMS OSC XO 120.0000MHZ LVDS SMD
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    DigiKey DSC1123AI1-120.0000 1
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    Microchip Technology Inc DSC1123AI1-120.0000
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    Microchip Technology Inc DSC1001AI1-120.0000

    MEMS OSC XO 120.0000MHZ CMOS SMD
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    DigiKey DSC1001AI1-120.0000 1
    • 1 $2.06
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    Mouser Electronics DSC1001AI1-120.0000
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    Microchip Technology Inc DSC1001AI1-120.0000
    • 1 $1.12
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    AI112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M69KB128AA

    Abstract: BCR10
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


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    PDF M69KB128AA 104MHz M69KB128AA BCR10

    c6090

    Abstract: transistor c6090 c6090 equivalent Datasheet C6090 F660BVX Commscope RG6 F677TSVV Commscope 412 P1 belden 9301 Commscope 500 P1 EFI500W3
    Text: LRC TERMS & CONDITIONS MINIMUM ORDER LIMITED WARRANTY RETURN $5,000.00 Seller’s liability under this warranty is limited to the repair or replacement of any unit which proves, in the reasonable opinion of Thomas & Betts, to be defective in material or workmanship under


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    BCR10

    Abstract: M69KM096AA
    Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus


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    PDF M69KM096AA 83MHz 32-Word) 83MHz BCR10 M69KM096AA

    Untitled

    Abstract: No abstract text available
    Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words


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    PDF M29DW640F TSOP48 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


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    PDF M69KB128AA 104MHz

    Untitled

    Abstract: No abstract text available
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


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    PDF M29W640FT M29W640FB

    Untitled

    Abstract: No abstract text available
    Text: M29W640FT M29W640FT 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


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    PDF M29W640FT M29W640FT

    Untitled

    Abstract: No abstract text available
    Text: M29DW641F 64 Mbit 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP/WP=12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words


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    PDF M29DW641F 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M65KG512AB 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR Low Power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332Mbit/s max. for 6ns speed


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    PDF M65KG512AB 512Mbit 512Mbit 332Mbit/s 133MHz 166MHz

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


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    PDF M58BW016DB M58BW016DT 512Kb 56MHz

    bcr10

    Abstract: No abstract text available
    Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ Multiplexed Address/Data bus


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    PDF M69KM096AA 83MHz 32-Word) 83MHz bcr10

    Q002

    Abstract: NUMONYX A0-A21 AEC-Q100 M29W064F M29W064FB M29W064FT A2A21
    Text: M29W064FT M29W064FB 64 Mbit 8 Mbit x 8 or 4 Mbit x 16, page, boot block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for program, erase, read – VPP =12 V for fast program (optional) ■ Asynchronous random/page read


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    PDF M29W064FT M29W064FB Q002 NUMONYX A0-A21 AEC-Q100 M29W064F M29W064FB M29W064FT A2A21

    A0-A21

    Abstract: JESD97 M29DW641F TFBGA48
    Text: M29DW641F 64 Mbit 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP/WP=12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words


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    PDF M29DW641F 24Mbit A0-A21 JESD97 M29DW641F TFBGA48

    la 7913

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


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    PDF M58BW016DB M58BW016DT 512Kb 56MHz la 7913 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H

    A0-A21

    Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


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    PDF M29W640FT M29W640FB TFBGA48 A0-A21 JESD97 M29W640F M29W640FB M29W640FT TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA Features Summary • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ


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    PDF M29W640FT M29W640FB TSOP48

    Untitled

    Abstract: No abstract text available
    Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM


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    PDF M36P0R8070E0

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


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    PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz

    Untitled

    Abstract: No abstract text available
    Text: M65KG256AF 256Mbit 4 Banks x 4M x 16 1.8 V Supply, 133MHz, DDR Low Power SDRAM Preliminary Data Feature summary • 256Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 4MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/clock cycle


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    PDF M65KG256AF 256Mbit 133MHz, 256Mbit 266Mbit/s 133MHz M65KG256AF8W6T M65KG256AF

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


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    PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz

    M36P0R8070E0

    Abstract: M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15
    Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM


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    PDF M36P0R8070E0 TFBGA107 M36P0R8070E0 M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15

    Numonyx

    Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48 A0-A21
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


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    PDF M29W640FT M29W640FB TFBGA48 Numonyx JESD97 M29W640F M29W640FB M29W640FT TFBGA48 A0-A21

    1N414R

    Abstract: op27 MAX104 MAX183 MAX185 ad711 W418 LF400
    Text: MAXI83/184/185 H ig h -S p e e d 1 2 -B it A /D C o n v e rte rs W ith E x te rn a l R e fe re n c e In p u t ABSOLUTE MAXIMUM RATINGS V d d to D G N D . V s s to D G N D .+ 0 .3 V to


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    PDF 12-Bit -15Vto D11-D0, 85AEWG MAX185BFWG MAX185AMRG MAX185BMRG -S1D-883 1N414R op27 MAX104 MAX183 MAX185 ad711 W418 LF400

    1N414R

    Abstract: MAX183 MAX183ACNG MAX183ACWG MAX183BCNG MAX183BCWG MAX184 MAX185 IN014 LS 1316
    Text: 19-3127; Rev.O; 4/91 H ig h -S p e e d 1 2 -B it A /D C o n v e rte rs W ith E x te rn a l R e fe re n c e In p u t _ F e a tu re s T h e M A X 1 8 3 /1 8 4 /1 8 5 a r e 1 2 - b i t , h i g h - s p e e d , B iC M O S , a n a lo g - to - d ig ita l c o n v e rte rs A D C s th a t


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    PDF 12-Bit MAX183/1 12-bit, MAX183 85AEWG MAX185BFWG MAX185AMRG MAX185BMRG -S1D-883 1N414R MAX183ACNG MAX183ACWG MAX183BCNG MAX183BCWG MAX184 MAX185 IN014 LS 1316