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    AS4LC1M16 Price and Stock

    Alliance Semiconductor Corporation AS4LC1M16ES-60JC

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    Alliance Semiconductor Corporation AS4LC1M16E5-60JC

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    Quest Components AS4LC1M16E5-60JC 44
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    Alliance Memory Inc AS4LC1M16S010TC

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    Bristol Electronics AS4LC1M16S010TC 13
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    Alliance Memory Inc AS4LC1M16E5-60TC

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    Bristol Electronics AS4LC1M16E5-60TC 8
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    Quest Components AS4LC1M16E5-60TC 1,016
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    Alliance Semiconductor Corporation AS4LC1M16E5-60JI

    IC,DRAM,EDO,1MX16,CMOS,SOJ,42PIN,PLASTIC
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    Quest Components AS4LC1M16E5-60JI 52
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    AS4LC1M16 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AS4LC1M16 Austin Semiconductor 1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH Original PDF
    AS4LC1M16-6EC Austin Semiconductor DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Military, CLDCC, 50-Pin Original PDF
    AS4LC1M16-6ECG Austin Semiconductor DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Military, CLDCC, 50-Pin Original PDF
    AS4LC1M16-6ECJ Austin Semiconductor DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Military, SOJ, 50-Pin Original PDF
    AS4LC1M16-7EC Austin Semiconductor DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Military, CLDCC, 50-Pin Original PDF
    AS4LC1M16-7ECG Austin Semiconductor DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Military, CLDCC, 50-Pin Original PDF
    AS4LC1M16-7ECJ Austin Semiconductor DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Military, SOJ, 50-Pin Original PDF
    AS4LC1M16883C Austin Semiconductor 1 meg x 16 DRAM, 3.3V EDO page mode optional extended refresh Original PDF
    AS4LC1M16883C-6EC Austin Semiconductor 1 MEG x 16 DRAM Original PDF
    AS4LC1M16883C-6ECG Austin Semiconductor 1 MEG x 16 DRAM Original PDF
    AS4LC1M16 883C-6ECJ Austin Semiconductor DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Military, SOJ, 50-Pin Original PDF
    AS4LC1M16883C-6ECJ Austin Semiconductor 1 MEG x 16 DRAM Original PDF
    AS4LC1M16883C-7EC Austin Semiconductor 1 MEG x 16 DRAM Original PDF
    AS4LC1M16 883C-7ECG Austin Semiconductor DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Military, CGull Wing, 50-Pin Original PDF
    AS4LC1M16883C-7ECG Austin Semiconductor 1 MEG x 16 DRAM Original PDF
    AS4LC1M16883C-7ECJ Austin Semiconductor 1 MEG x 16 DRAM Original PDF
    AS4LC1M16 883C-8EC Austin Semiconductor DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Military, CLDCC, 50-Pin Original PDF
    AS4LC1M16883C-8EC Austin Semiconductor 1 MEG x 16 DRAM Original PDF
    AS4LC1M16883C-8ECG Austin Semiconductor 1 MEG x 16 DRAM Original PDF
    AS4LC1M16883CEC-6 Austin Semiconductor 1 MEG x 16 DRAM Original PDF

    AS4LC1M16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: March 2001 AS4LC2M8S1 AS4LC1M16S1 3.3V 2M x 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks 2M × 8 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row,8 column address • All signals referenced to positive edge of clock, fully


    Original     		AS4LC1M16S1 PC100 44-pin PDF

    AS4LC1M16S1

    Abstract: AS4LC1M16S0 A102BA
    Text: May 2001 AS4LC2M8S1 AS4LC2M8S0 AS4LC1M16S1 AS4LC1M16S0 Preliminary 3.3V 2M x 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks 2M × 8 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16)


    Original     		AS4LC1M16S1 AS4LC1M16S0 44-pin 50-pin AS4LC1M16S1 AS4LC1M16S0 A102BA PDF

    AS4LC1M16E5

    Abstract: AS4LC1M16E5-50JC
    Text: AS4LC1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time


    Original     		AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) AS4LC1M16E5 AS4LC1M16E5-50JC PDF

    AS4LC1M16S0

    Abstract: AS4LC1M16S1
    Text: Advance information AS4LC2M8S1 AS4LC1M16S1 3.3V 2M x 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks 2M × 8 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row,8 column address


    Original     		AS4LC1M16S1 44-pin 50-pin 44-pin AS4LC2M8S1-10TC AS4LC2M8S1-12TC 50-pin AS4LC1M16S1-8TC AS4LC1M16S1-10TC AS4LC1M16S1-12TC AS4LC1M16S0 AS4LC1M16S1 PDF

    4C1M16E5

    Abstract: AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1
    Text: AS4LC1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time


    Original     		AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) 4C1M16E5 AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1 PDF

    AS4LC1M16E5-60TC

    Abstract: AS4LC1M16E5 AS4LC1M16E5-60JC
    Text: AS4LC1M16E5 Š 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time


    Original     		AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) AS4LC1M16E5-60TC AS4LC1M16E5 AS4LC1M16E5-60JC PDF

    AS4LC1M16

    Abstract: No abstract text available
    Text: AS4LC1M16 883C 1 MEG x 16 DRAM AUSTIN SEMICONDUCTOR, INC. PRELIMINARY DRAM 1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD 883 • SMD Planned 44/50-Pin SOJ/LCC/Gull Wing


    Original     		AS4LC1M16 44/50-Pin 450mil 024-cycle 180mW AS4LC1M16 DS000020 PDF

    14 pin diagram of optrex lcd display 16x2

    Abstract: optrex lcd display 16x2 LCD ASCII table CODE 16x2 LCD ASCII CODE 16x2 NII51010-7 Scatter-Gather direct memory access SG-DMA LCD MODULE optrex 16x2 block diagram images of lcd display 16x2 d4564163-a80 NII51019-7
    Text: Quartus II Version 7.1 Handbook Volume 5: Embedded Peripherals Preliminary Information 101 Innovation Drive San Jose, CA 95134 www.altera.com QII5V5-7.1 Copyright 2007 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and


    Original     		PDF

    as4c1m16e5

    Abstract: AS4C1M16E5-60TC AS4LC1M16E5 as4c1m16e5-50jc
    Text: AS4C1M16E5 5V 1Mx16 CMOS DRAM EDO Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words × 16 bits • High speed - RAS-only or CAS-before-RAS refresh Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout


    Original     		AS4C1M16E5 42-pin 44/50-pin AS4C1M16E5) AS4LC1M16E5) AS4C1M16E5-60) as4c1m16e5 AS4C1M16E5-60TC AS4LC1M16E5 as4c1m16e5-50jc PDF

    20X2 LCD DISPLAY PINOUT

    Abstract: manual TV thomson 29 DF 170 CRT TV BLOCK DIAGRAM schematic diagram crt tv sharp lcd tv inverter board schematic toshiba lcd power board schematic LCD display 20X2 3v pin diagram of 8X2 LCD DISPLAY 8X2 LCD DISPLAY LD7552BPS
    Text: S1D13506 Color LCD/CRT/TV Controller S1D13506 TECHNICAL MANUAL Document Number: X25B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


    Original     		S1D13506 S1D13506 X25B-Q-001-06 their2712-9164 SA-1110 X25B-G-013-03 20X2 LCD DISPLAY PINOUT manual TV thomson 29 DF 170 CRT TV BLOCK DIAGRAM schematic diagram crt tv sharp lcd tv inverter board schematic toshiba lcd power board schematic LCD display 20X2 3v pin diagram of 8X2 LCD DISPLAY 8X2 LCD DISPLAY LD7552BPS PDF

    1MX16

    Abstract: AS4LC1M16S0 4lc2m8
    Text: AS4LC2M8S0 AS4LC1M16S0 H igh Perform ance 2MX8/1MX16 CMOS DRAM 1 6 M egabit CM O S synchronous DRAM Advance information Features • Organization: 1,048 ,5 7 6 w ords x 8 bits x 2 banks 2M x8 52 4 ,2 8 8 w ords x 16 bits x 2 banks (lM x 16) • All signals referenced to positive edge o f dock


    OCR Scan     		2MX8/1MX16 AS4LC1M16S0 AS4LC2M8S0-10TC 2M8S0-12TC 50-pin AS4LC1M16S0-10TC LCIM16S0-12TC 0001b27 G1998 1MX16 AS4LC1M16S0 4lc2m8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ I l AS4C1M16E5 AS4LC1M16E5 A 5V/3V l M x l ó CMOS DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed ■Read-modify-write >TTL-compatible, three-state DQ >JEDEC standard package and pinout - 4 5 /5 0 /6 0 ns RA S access tim e


    OCR Scan     		AS4C1M16E5 AS4LC1M16E5 42-pin /50-p 6E5-60) AS4C1M16ion. AS4LC1M16E5 44/50-pin 16E5-45TCAS4LC1M PDF

    Untitled

    Abstract: No abstract text available
    Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0


    OCR Scan     		AS4LC1M16EÃ 42-pin 4C1M16EO-SO) PDF

    Untitled

    Abstract: No abstract text available
    Text: A AS4LC1M16E5 3V 1Mx 16 CMOS DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • High speed •TTL-com patible, three-state DQ ■JEDEC standard package and pinout - 5 0 / 6 0 ns RAS access time - 2 0 /2 5 ns hyper page cycle time - 1 2 /1 5 ns CAS access time


    OCR Scan     		42-pin AS4LC1M16E5) AS4VC1M16E5) AS4SC1M16E5) M16E5 42-pin AS4LC-1M16E5-50JCAS4LC-1M 16E5-50JI AS4LC1M16E5-60JC AS4LC1M16E5-60JI PDF

    4C1M16

    Abstract: 1MX16 4LC1M16
    Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout


    OCR Scan     		1MX16 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) 6E0-50 4C1M16E0-60 6E0-70 AS4C1M16E0 4C1M16 4LC1M16 PDF

    Untitled

    Abstract: No abstract text available
    Text: AUSTIN S E M IC O N D U C T O R . INC AS4LC1M16 883C 1 MEG X 16 DRAM PRELIMINARY D R A M 1 M E G x 1 6 D R A M 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • M IL-STD 883 44/50-Pin SOJ/LCC/Gull Wing


    OCR Scan     		AS4LC1M16 44/50-Pin 450mil 024-cycle typ883C MIL-STD-883 AS-ILC1M16 OS000020 PDF

    Untitled

    Abstract: No abstract text available
    Text: H igh Performance 1MX16 CMOS DRAM •■ II AS4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0


    OCR Scan     		1MX16 AS4C1M16E0 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) AS4LC1M16E0 AS4LC1M16EO-70JC 42-pm 1M16E0 PDF

    Untitled

    Abstract: No abstract text available
    Text: À U ujüP M 1 \ 1 < » H Ili h! î Hc Li V-s 11 ( ; is i h - l i t f S !I ; H i l! i vj Advance information Features •A utom atic an d direct precharge 1 Burst read, single w rite • O rganization: 1 ,0 4 8 ,5 7 6 w ords x 8 bits x 2 banks (2M x8) 3 2 4 ,2 8 8 w ords x 16 bits x 2 banks


    OCR Scan     		44-pin 50-pin AS4LC2M8S0-12TC AS4LC1M16S0-12TC AS4LC1M16SO-10TC PDF

    Untitled

    Abstract: No abstract text available
    Text: AS4C1M16E5 A 5V 1Mx 16 CMOS DRAM EDO Features • Organization: 1,04 8 ,5 7 6 w ords x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 4 5 / 5 0 / 6 0 ns RAS access tim e - 2 0 / 2 0 / 2 5 ns hyper page cycle tim e


    OCR Scan     		42-pin AS4C1M16E5) AS4LC1M16E5) AS4VC1M16E5) AS4SC1M16E5) 16E5-60) 42-pin AS4C1M16E5-45JC. AS4C1M16E5-50JC AS4C1M16E5-50JI PDF

    Untitled

    Abstract: No abstract text available
    Text: A S p AUSTIN SEMICONDUCTOR, INC. ^ m e g H s DRAM PRELIMINARY 1 D R A M M E G x 1 6 D R A M 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • M IL-STD 883 44/50-Pin SOJ/LCC/Gull Wing 450mil • SM D Planned


    OCR Scan     		44/50-Pin 450mil 024-cycle 180mW CASTELLAT10NS PDF

    Untitled

    Abstract: No abstract text available
    Text: H ish Performance' •■ AS4LC 1 M I 6 S 0 A 1M X I 6 C M O S D RA M I M x 16 S y n c hr on o us D I M M Advance information Features • Organization: 524,288 w ords x 16 bits x 2 banks * Can assert random column address in every cycle • All signals referenced to positive edge o f clock


    OCR Scan     		44-pin AS4LC1M16S0 Q00CHb2 PDF

    4lc1m16e5-6

    Abstract: No abstract text available
    Text: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al


    OCR Scan     		16E5-60) 4LC1M16E5-60) 42-pin AS4C1M16ES-50JC AS4C1M16E5-60JC AS4LC1M16E5-50TC -60TC 42-pin 1M16E0 4lc1m16e5-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance information •■ I l AS4LC2M8S0 AS4LC1M1ÓS0 A 3.3V 2 M x 8 /lM x 16 CMOS synchronous DRAM Features Automatic and direct precharge Burst read, single write Can assert random column address in every cycle LVl'l'L compatible V O 3.3Vpower supply JEDEC standard package, pinout and function


    OCR Scan     		44-pin 50-pin 44-pin 50-pin AS4LC1M16S0-8TC ASHX2M890-10TC AStLClM1690-10TC AS4LC2M8S0-12TC AS4IC1M16S0-12TC T90PII400 PDF

    4LC1M16E5

    Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5
    Text: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh


    OCR Scan     		AS4C1M16E5 AS4LC1M16E5 4C1M16E5-60) 4LC1M16E5-60) 42-pin 4C1M16E5) 44/50-pin 4LC1M16E5) AS4C1M16E5) AS4C1M16E5 4LC1M16E5 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A 4lc1m16e5-60 AS4LC1M16E5 PDF