ASSO Search Results

TGF1350

Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation

20TAWG

Abstract: 3E2A UC1901 UC2901
Contextual Info: Iapplication flj IN F Ö 1 H 1 available j UNITRODE UC1901 UC2901 UC3901 Isolated Feedback Generator FEATURES DESCRIPTION • An Amplitude-Modulation System for Transformer Coupling an Isolated Feedback Error Signal The UC1901 family is designed to solve many of the problems associ­

transistor zo 107

Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz

low noise pseudomorphic

Contextual Info: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE

2PG001

Abstract: Panasonic IGBT TO220 2PG002 2PG003
Contextual Info: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These

Contextual Info: Data Sheet 3-TERMINAL POSITIVE LINEAR REGULATOR AZ78LXX General Description Features The AZ78LXX series are three terminal positive regulators with several fixed output voltages. These regulators can provide local on card regulation, eliminating the distribution problems associated with single point

Contextual Info: 125L Series www.vishay.com Vishay Cera-Mite AC Line Rated Ceramic Disc Capacitors Class X1, 400 VAC/Class Y4, 125 VAC FEATURES • Worldwide safety agency recognition Underwriters laboratories - UL 1414 Canadian standards association - CSA 22.2 European EN132400 to IEC 60384-14 2nd edition

cera-mite capacitor marking code

Abstract: 125-X1-400 102M 125L
Contextual Info: 125L Series www.vishay.com Vishay Cera-Mite AC Line Rated Ceramic Disc Capacitors Class X1, 400 VAC/Class Y4, 125 VAC FEATURES • Worldwide safety agency recognition Underwriters laboratories - UL 1414 Canadian standards association - CSA 22.2 European EN132400 to IEC 60384-14 2nd edition

MIL-1-7444

Abstract: MIL-1-23053 47-10150-XX
Contextual Info: Heat Shrink Tubing Thin Wall, 2:1 Shrink Ratio Includes Assortment Packs Description: NTE’s Thin Wall Heat Shrink Tubing is a high performance, multi purpose, professional grade, flexible, flame retardant, polyolefin based heat−shrinkable tubing with excellent electrical, chemical and

Contextual Info: MIC2557 Micrel MIC2557 PCMCIA Card Socket VPP Switching Matrix • • • General Description The MIC2557 switches the four voltages required by PCMCIA Personal Computer Memory Card International Association card VPP Pins. The MIC2557 provides selectable 0V, 3.3V,

Contextual Info: MIC2562A Micrel MIC2562A PCMCIA/CardBus Socket Power Controller General Description Applications The MIC2562A PCMCIA Personal Computer Memory Card International Association and CardBus Power Controller handles all PC Card slot power supply pins, both VCC and VPP.

RELECO S3-B

Abstract: s3ct RELECO S2-B RELECO C3 MR-C, RELECO A114 A231 S3-MP releco MR-c c3s111
Contextual Info: MRC series S3-B Socket for 11-pin standard relay according to IEC 67-I-18b Type S3-B 3-pole, 1 connection level Coding ring optional Integrated retaining clip and labelling space Rated current 10 A Associated, plug-in 11-pin MRC relays Suitable for holding the Releco coding ring

NE425S01

Abstract: NE425S01-T1 NE425S01-T1B
Contextual Info: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB

EPA025A-70

Abstract: 0466 1.5 micron
Contextual Info: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz

LP7512

Abstract: LP7512P70 MIL-HDBK-263 ultra low idss
Contextual Info: LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.4 dB Noise Figure at 2 GHz ♦ 18 dB Associated Gain at 2 GHz ♦ Low DC Power Consumption: 30mW • DESCRIPTION AND APPLICATIONS

Toroid 3E2A

Abstract: UC3901N Toroid 3E2A or equivalent uc2901 smps a42 UC1901L ferrite cores 3E2A PLCC-20 SOIC-14 SOIC-16
Contextual Info: UC1901 UC2901 UC3901 Isolated Feedback Generator FEATURES DESCRIPTION • An Amplitude-Modulation System for Transformer Coupling an Isolated Feedback Error Signal The UC1901 family is designed to solve many of the problems associated with closing a feedback control loop across a voltage isolation

CBT3126

Abstract: CBT3126D CBT3126DB CBT3126DS CBT3126PW JESD22-A114E JESD78 sot337-1and sot403-1and
Contextual Info: CBT3126 Quad FET bus switch Rev. 03 — 9 December 2008 Product data sheet 1. General description The CBT3126 is a quad FET bus switch with independent line switches. Each switch is disabled when the associated Output Enable OE input is LOW. The CBT3126 is characterized for operation from −40 °C to +85 °C.

DALLAS 2501

Abstract: LT1097 x9241w
Contextual Info: TECH BRIEF The Premise The Design: IMPLEMENTING PROGRAMMABLE T-NETWORKS USING XDCPs—IGSF FILTERS Implementing a traditional T-network using XDCPs results in a programmable T-network, and the analog function associated with the T-network becomes programmable as well. In other words, using

diode 47c

Abstract: CAB-34F CAB-14F ohmite 80 series ohmite 10 series
Contextual Info: Ohmite Cabinet Resistor Assortments are available from stock. They consist of sturdy plastic cabinets with compartmentalized drawers. Resistors are sorted by ohmic value. Each cabinet contains resistor types and values which are available from Ohmite stock.

MS51830

Abstract: NAS1394 NAS1395 MS51830-201L NAS1394C3L MS51830-202 ms51830-201 NAS1394C3 MS51831-102 m6 bolt shear strength
Contextual Info: UniSert Kit Assortments Repair Kits UniSert Kit Assortments Convenient UniSert Kits − the right Insert and the correct Installation Tool for your repairs. UNITED INSERTS INCLUDED IN KIT KIT NO. ID UNITED THD PART NO. UNF FINE KIT QTY UDB-1-US-F TOOLS INCLUDED

NE33284AS

Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

AT-41410

Abstract: 41410 bipolar transistor 6 GHz UHF transistor GHz AT41410 NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth

nec 8772

Abstract: LD 7522 142.58 NE32584C NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE

GHZ micro-X ceramic Package

Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
Contextual Info: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor