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    ATC DRAIN WIRE Search Results

    ATC DRAIN WIRE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation

    ATC DRAIN WIRE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier


    Original     		PDF RF3933 RF3933 DS130905

    Untitled

    Abstract: No abstract text available
    Text: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier


    Original     		PDF RF3934 RF3934 DS131206

    Untitled

    Abstract: No abstract text available
    Text: RF3931 RF3931 30W GaN Wideband Power Amplifier The RF3931 is a 48V 30W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier


    Original     		PDF RF3931 RF3931 DS130905

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 125W GaN Power Amplifier 225MHz to 450MHz The RFHA1042 is optimized for military communications, commercial wireless infrastructure and general purpose applications in the 225MHz to 450MHz frequency band. Using an advanced 48V high power density gallium nitride GaN


    Original     		PDF RFHA1042 225MHz 450MHz RFHA1042 450MHz DS131023

    Untitled

    Abstract: No abstract text available
    Text: RF3932 RF3932 60W GaN Wideband Power Amplifier The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific /medical, and general purpose broadband amplifier


    Original     		PDF RF3932 RF3932 DS130905

    Untitled

    Abstract: No abstract text available
    Text: RFHA3944 65W GaN Wide-Band Power Amplifier The RFHA3944 is a 48V, 65W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second


    Original     		PDF RFHA3944 RFHA3944 DS131024

    Untitled

    Abstract: No abstract text available
    Text: RFHA3942 35W GaN Wide-Band Power Amplifier The RFHA3942 is a 48V, 35W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second


    Original     		PDF RFHA3942 RFHA3942 DS131204

    Untitled

    Abstract: No abstract text available
    Text: RFHA3942 35W GaN Wide-Band Power Amplifier The RFHA3942 is a 48V, 35W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second


    Original     		PDF RFHA3942 RFHA3942 DS131023

    NE6510179A

    Abstract: NE65 ms 16881
    Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000, 24-Hour NE65 ms 16881

    NE6510179A

    Abstract: No abstract text available
    Text: NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000,

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3

    NE6510179A

    Abstract: No abstract text available
    Text: 1W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000, 24-Hour

    NE6510179A

    Abstract: No abstract text available
    Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000, 24-Hour

    MRF374A

    Abstract: marking c14a l1a marking
    Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A marking c14a l1a marking

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal


    Original     		PDF CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1

    Z14b

    Abstract: Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		PDF MRF374/D MRF374 Z14b Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B

    RO3010

    Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374 31JUL04 31JAN05 RO3010 Z14B C14A thermistor r5t 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b

    RO3010

    Abstract: j352 transistor j352 bc17a VJ2225Y
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A RO3010 j352 transistor j352 bc17a VJ2225Y

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal


    Original     		PDF CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1

    16312 transistor

    Abstract: CGH35060F1-TB
    Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal


    Original     		PDF CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1 16312 transistor CGH35060F1-TB

    Untitled

    Abstract: No abstract text available
    Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2010 NPT2010 NDS-034

    Untitled

    Abstract: No abstract text available
    Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2010 NPT2010 NDS-034

    transistor R1A 37

    Abstract: 5233 mosfet J146 VJ1210y
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 transistor R1A 37 5233 mosfet J146 VJ1210y

    RO3010

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 RO3010