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Kyocera AVX Components 100B3R9BT500XT Silicon RF Capacitors / Thin Film 500volts 3.9pF
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Mouser Electronics	100B3R9BT500XT		112			1 $5.29 10 $4.56 100 $3.93 1000 $3.33 10000 $3.33	Buy Now
TTI	100B3R9BT500XT	Reel			500	1 - 10 - 100 - 1000 $3.3 10000 $3.3	Buy Now
Kyocera AVX Components 100B3R9BT500XTV Silicon RF Capacitors / Thin Film 500V 3.9pF Tol 0.1pF Las Mkg Vertical
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TTI	100B3R9BT500XTV	Reel			500	1 - 10 - 100 - 1000 $3.65 10000 $3.65	Buy Now

ATC100B3R9BT500XT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S9102N MRF8S9102NR3	PDF
C5750X7S2A106MT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 Designed for CDMA base station applications with frequencies from1805 MHz	Original	MRF8S18210WHS MRF8S18210WHSR3 MRF8S18210WGHSR3 from1805 MRF8S18210WHSR3 C5750X7S2A106MT	PDF
CRCW08054701FKEA Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987 Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage	Original	MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 CRCW08054701FKEA ZO 607 MA MWE6IC9100NBR1 A114 A115 AN1977 AN1987	PDF
J1220 Abstract: 100WpEp MWE6IC9100N Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 5, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage	Original	MWE6IC9100N--2 MWE6IC9100N MWE6IC9100GNR1 MWE6IC9100NBR1 J1220 100WpEp	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 ARCHIVE INFORMATION The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base	Original	MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1	PDF
WELWYN c21 Abstract: No abstract text available Text: Document Number: AFT26HW050S Rev. 1, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous	Original	AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 6/2013Semiconductor, WELWYN c21	PDF
ATC100B331 Abstract: MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22 MWE6IC9100GNR1 MWE6IC9100N Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 2, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage	Original	MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 ATC100B331 MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22	PDF
amplifier MA-920 Abstract: ATC100B470JT500XT MRF8S9102NR3 MOSFET 355 J314 ATC-100B-3R0 EQUIVALENT FOR J171 ATC100B3R9BT500XT MOSFET IRL arco j314 Text: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S9102N MRF8S9102NR3 amplifier MA-920 ATC100B470JT500XT MRF8S9102NR3 MOSFET 355 J314 ATC-100B-3R0 EQUIVALENT FOR J171 ATC100B3R9BT500XT MOSFET IRL arco j314	PDF
WELWYN c21 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT26HW050S Rev. 2, 7/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous	Original	AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 7/2013Semiconductor, WELWYN c21	PDF
ATC100B331JT200XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base	Original	MWE6IC9100N--1 MWE6IC9100N 40tors MWE6IC9100NR1 MWE6IC9100N--1 ATC100B331JT200XT	PDF
MRF8S9232N Abstract: ATC100B1R5BT500XT ATC100B3R3BT500XT c5750x7r1h106k MPZ2012S300AT 82c230 ATC100B2R0BT500XT ATC100B620 AN1955 transistor J333 Text: Document Number: MRF8S9232N Rev. 0, 10/2011 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9232NR3 Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S9232N MRF8S9232NR3 MRF8S9232N ATC100B1R5BT500XT ATC100B3R3BT500XT c5750x7r1h106k MPZ2012S300AT 82c230 ATC100B2R0BT500XT ATC100B620 AN1955 transistor J333	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 6, 10/2011 RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage	Original	MWE6IC9100N--2 MWE6IC9100N MWE6IC9100NBR1 MWE6IC9100N--2	PDF
ATC100B1R8BT500XT Abstract: c5750x7s2a106mt J584 ATC100B3R9BT500XT J406 NI880xs NI-880XS-2 J426 Text: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors MRF8S18210WHSR3 MRF8S18210WGHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz	Original	MRF8S18210WHS from1805 MRF8S18210WHSR3 MRF8S18210WGHSR3 MRF8S18210WHS ATC100B1R8BT500XT c5750x7s2a106mt J584 ATC100B3R9BT500XT J406 NI880xs NI-880XS-2 J426	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 0, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage	Original	MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1	PDF

ATC100B4R7CT500XT Abstract: J376 Text: Document Number: MRF8S9232N Rev. 0, 10/2011 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9232NR3 Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S9232N MRF8S9232NR3 ATC100B4R7CT500XT J376	PDF
MWE6IC9100N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base	Original	MWE6IC9100N--1 MWE6IC9100N MWE6IC9100NR1 MWE6IC9100N--1	PDF