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Bel Fuse 0ABB-7000-TM FUSE BOARD MOUNT 7A 32VDC 0603
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DigiKey	0ABB-7000-TM	Digi-Reel	864		1	1 $0.93 10 $0.93 100 $0.5501 1000 $0.42255 10000 $0.42255	Buy Now
	0ABB-7000-TM	Cut Tape	864		1	1 $0.93 10 $0.93 100 $0.5501 1000 $0.42255 10000 $0.42255	Buy Now
	0ABB-7000-TM	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.32297	Buy Now
Avnet Americas	0ABB-7000-TM	Ammo Pack		11 Weeks, 3 Days	1	1 $0.842 10 $0.842 100 $0.537 1000 $0.523 10000 $0.523	Buy Now
	0ABB-7000-TM	Reel		11 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.31451	Buy Now
Newark	0ABB-7000-TM	Cut Tape	5,000		1	1 $0.842 10 $0.842 100 $0.537 1000 $0.523 10000 $0.523	Buy Now
	0ABB-7000-TM	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.33	Buy Now
Master Electronics	0ABB-7000-TM					1 - 10 - 100 $0.9355 1000 $0.9077 10000 $0.3264	Buy Now
TXC Corporation TB-70.000MBD-T MEMS OSC XO 70.0000MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TB-70.000MBD-T	Cut Tape	438		1	1 $2.65 10 $1.641 100 $1.011 1000 $1.011 10000 $1.011	Buy Now
Red Lion Controls CUB70000 COUNTER LCD 8 CHAR 3V PANEL MT
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DigiKey	CUB70000				1	1 $44.5 10 $44.5 100 $44.5 1000 $44.5 10000 $44.5	Buy Now
Seiko Epson Corporation NB70-004546 MEMORY CARD HARD DRIVE 260MB
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DigiKey	NB70-004546					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Seiko Epson Corporation NB70-004506 MEMORY CARD ETHERNET 10BASE-2
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DigiKey	NB70-004506					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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B7000 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SA6954 Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to	Original	S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00	PDF
Genlock Abstract: GS4910B 1kv hd CLOCK GENERATOR 10HZ GS4911B/GS4910B 244M 267M GS4911B smpte 274m VG901101A Text: GS4911B/GS4910B HD/SD/Graphics Clock and Timing Generator with GENLOCK Key Features Description Video Clock Synthesis • • • • • • Generates any video or graphics clock up to 165MHz Pre-programmed for 8 video and 13 graphics clocks Accuracy of free-running clock frequency limited only by	Original	GS4911B/GS4910B 165MHz GS4911B 96kHz Genlock GS4910B 1kv hd CLOCK GENERATOR 10HZ 244M 267M smpte 274m VG901101A	PDF
GS4901B Abstract: 244M 267M GS4900B smpte 274m Text: GS4901B/GS4900B SD Clock and Timing Generator with GENLOCK GS4901B/GS4900B Data Sheet Key Features Video Clock Synthesis • • • • • Pre-programmed for 4 video clock periods 14.32 MHz, 27 MHz, 36 MHz, and 54 MHz Accuracy of free-running clock frequency limited only by	Original	GS4901B/GS4900B GS4901B/GS4900B GS4901B 96kHz 244M 267M GS4900B smpte 274m	PDF
RIC0639 Abstract: FM25256B FM25256B-G FM25W256 FM25V02 -G Text: FM25256B 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process	Original	FM25256B 256Kb FM25256B 256-kilobit FM25256B, FM25256B-G B70003G RIC0639 FM25V02 RIC0639 FM25256B-G FM25W256 FM25V02 -G	PDF
C000H-DFFFH Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation	Original	MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh	PDF
JESD97 Abstract: M29DW128F TSOP56 6C80 Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read	Original	M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80	PDF
SA452 Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this	Original	Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871	PDF
S29WS256N Abstract: S71WS512NE0BFWZZ Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip	Original	S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N	PDF
M29W128FL Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56 Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read	Original	M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56	PDF
FL128P Abstract: SPANSION FL128P Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P	PDF
samsung electronics ba41 Abstract: BA175 Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175	PDF
BA379 Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324	PDF
NS064N Abstract: S29NS128N S29NS256N VDC048 S29NS256 Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70	Original	S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256	PDF
JESD97 Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)	Original	M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA	PDF

IS29GL256 Abstract: No abstract text available Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns	Original	IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE	PDF
MX29GL256FLT2I-90Q Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544 Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC	Original	MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544	PDF
S25FL129 Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024 Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024	PDF
asme SA388 Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ	Original	S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63	PDF
120R Abstract: C8800 Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am29LV2562M 120R C8800	PDF
DQ141 Abstract: No abstract text available Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)	Original	M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141	PDF
l256mh113 Abstract: L256ML123R Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am29LV256M l256mh113 L256ML123R	PDF
F199 transistor Abstract: F46B F17E ST F445 d732 a9ca 34ba 8230C f451 F422 Text: National Semiconductor Application Note 486 Ashok Krishnamurthy April 1987 INTRODUCTION This report describes the implementation of a Single Precision Floating Point Arithmetic package for the National Semiconductor HPC microcontroller The package is based	Original		PDF
06SEC Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-MBIT, 8-MBIT, 16-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 • Flexible SmartVoltage Technology — 2.7V-3.6V Program/Erase — 2.7V-3.6V Read Operation — 12V Vpp Fast Programming ■ 2.7V or 1.8V I/O Option	OCR Scan	16-MBIT 28F400B3, 28F800B3, 28F160B3 32-KW 1997Flash AP-617	PDF

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B7000 Price and Stock

Bel Fuse 0ABB-7000-TM

TXC Corporation TB-70.000MBD-T

Red Lion Controls CUB70000

Seiko Epson Corporation NB70-004546

Seiko Epson Corporation NB70-004506

B7000 Datasheets Context Search

SA6954

Genlock

GS4901B

RIC0639

C000H-DFFFH

JESD97

SA452

S29WS256N

M29W128FL

FL128P

samsung electronics ba41

BA379

NS064N

JESD97

IS29GL256

MX29GL256FLT2I-90Q

S25FL129

asme SA388

120R

DQ141

l256mh113

F199 transistor

06SEC

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