LTN150XG-L05
Abstract: ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756
Text: Main System Option SESC code Location 0902-001841 1105-001609 3903-000055 BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A BA43-00155A BA44-00132A BA44-00162A BA44-00205A BA44-00209A BA44-00211A
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BA31-00025A
BA31-00026A
BA39-00527A
BA39-00528A
BA39-00533A
BA39-00540A
BA41-00568A
BA41-00569A
BA42-00161A
BA42-00162A
LTN150XG-L05
ZD600
c828* npn
W316
bag c836
BA59-01664A
1608 F 100nF
cpu fan sepa
LTN150XG
R756
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BA100 diode
Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance
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K5C6481NT
4Mx16)
512Kx16)
512Kx10
81-Ball
80x11
BA100 diode
BA102
ba107
Samsung MCP
BA125 Diode
diode ba102
BA134
BA100
BA106
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BA100 diode
Abstract: BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125
Text: K5C6417YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 16M Bit (1Mx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Advance 0.0 Initial Draft August 29, 2001 1.0 Revised - Changed F-Vcc Max. Value (from 3.0V to 3.3V)
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K5C6417YT
4Mx16)
1Mx16)
81-Ball
80x11
08MAX
BA100 diode
BA133 diode
diode ba102
SAMSUNG MCP
BA102 diode
BA102
bufer
BA114
BA122
BA125
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transistor sr61
Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K5T6432YT
4Mx16)
2Mx16)
81-Ball
80x11
transistor sr61
BA107
transistor BA29
BA27 chip transistor
BA106
BA99
SAMSUNG MCP
A21-A7
transistor ba31
ba30 transistor
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Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
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BA100 diode
Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)
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KADxx0300B
2Mx16)
69-Ball
10MAX
BA100 diode
BA115
BA116
BA961
SAMSUNG MCP
ba841
ba7 transistor
BA124
BA127
BA133 diode
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BA107
Abstract: ba4901 ba741 BA115 ba901 BA5101 BA100 diode BA102 BA116 ba941
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
48FBGA
047MAX
BA107
ba4901
ba741
BA115
ba901
BA5101
BA100 diode
BA102
BA116
ba941
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BA961
Abstract: BA43 48FBGA samsung nor flash ba107
Text: K8D6x16UTM / K8D6x16UBM NOR FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
48FBGA
047MAX
BA961
BA43
samsung nor flash
ba107
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BA107
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
BA107
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BA114
Abstract: BA107 samsung ba92 BA122
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
48FBGA
047MAX
BA114
BA107
samsung ba92
BA122
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samsung date code decorder
Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark
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KBA0101A0M
KBA0201A0M
KBA0301A0M
KBA0401A0M
4Mx16)
2Mx16)
512Kx16)
LIM-011025
samsung date code decorder
SAMSUNG MCP
transistor sr61
transistor BA29
BA102
BA127 Diode
MITSUBISHI SR-40
UtRAM Density
samsung NAND memory
nand sdram mcp
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P-TFBGA63-0911-0
Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory
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TC58FVT641/B641FT/XB-70
64-MBIT
TC58FVT641/B641
864-bit,
BA102
BA103
BA110
BA111
P-TFBGA63-0911-0
BA102
PTFBGA-63
diode ba102
BA119
B641
BA95
BA112
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diode ba102
Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory
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TC58FVT641/B641FT-10
64-MBIT
TC58FVT641/B641
864-bit,
BA102
BA103
BA110
BA111
diode ba102
BA102
BA127
BA127 Diode
TC58FVB641FT
BA43
B641
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TH50VSF3680AASB
Abstract: A12F TH50VSF3681AASB BA72 BA111 BA96 BA110 ba95 BA102 BA85
Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.
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TH50VSF3680/3681AASB
TH50VSF3680/3681AASB
608-bit
864-bit
69-pin
3/3681AASB
XXXh/60h)
BPA/60h)
TH50VSF3680AASB
A12F
TH50VSF3681AASB
BA72
BA111
BA96
BA110
ba95
BA102
BA85
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samsung nor flash
Abstract: BA102 BA127 Diode BA134 samsung nor K8A6415EBB
Text: NOR FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8A6415ET
couldre17.
54MHz
A0-A21
00000FH
00001FH
00002FH
000000H
samsung nor flash
BA102
BA127 Diode
BA134
samsung nor
K8A6415EBB
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SAMSUNG MCP
Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002
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KBB0xA500M
8Mx8/4Mx16)
8Mx16)
4Mx16)
150uA
100uA
200uA
80-Ball
80x12
SAMSUNG MCP
KBB05A500
transistor BA29
BA102
NAND FLASH BGA
transistor ba47
Pre-programming nand samsung
UtRAM Density
BA841
BGA-100
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KBB0XA300M
Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary
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KBB0xA300M
8Mx8/4Mx16)
8Mx16)
2Mx16)
80-Ball
80x12
transistor ba47
SAMSUNG MCP
BA108
BA102
BA99
NAND FLASH BGA
BGA34
BGA22
t402
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BA99
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8A6415ET
54MHz
A0-A21
00000FH
00001FH
00002FH
000000H
BA99
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BA102
Abstract: BA127 Diode diode ba102 BA114
Text: TC58FVT641/B641FT/XB-70,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory
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TC58FVT641/B641FT/XB-70
64-MBIT
TC58FVT641/B641
864-bit,
BA102
BA103
BA110
BA111
BA102
BA127 Diode
diode ba102
BA114
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Untitled
Abstract: No abstract text available
Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory
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TC58FVT641/B641FT/XB-70
64-MBIT
TC58FVT641/B641
864-bit,
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BA102
Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.
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TH50VSF3680/3681AASB
TH50VSF3680/3681AASB
608-bit
864-bit
69-pin
3/3681AASB
XXXh/60h)
BPA/60h)
BA102
diode ba102
diode ba103
TH50VSF3680AASB
A12F
TH50VSF3681AASB
BA41
BA96
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BA102
Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for
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TC58FVM6
64MBIT
TC58FVM6T2A/B2A
67108864-bit,
BA102
TOSHIBA TC58 cmos memory -NAND
TC58
TC58FVM6B2A
TC58FVM6T2A
TC58FVM6T2AFT65
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Untitled
Abstract: No abstract text available
Text: TC58FYM6 T/B 2A (FT/XB) 70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FYM6T2A/B2A features commands for
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TC58FYM6
64MBIT
TC58FYM6T2A/B2A
67108864-bit,
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BA102
Abstract: diode ba102 diode ba103 BA127 Diode BA102 equivalent BA111 Ba91 diode ba110 ba119 BA127
Text: TH50VSF3682/3683AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3682/3683AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.
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TH50VSF3682/3683AASB
TH50VSF3682/3683AASB
608-bit
864-bit
69-pin
XXXh/60h)
BPA/60h)
XXXh/40h)
BA102
diode ba102
diode ba103
BA127 Diode
BA102 equivalent
BA111
Ba91
diode ba110
ba119
BA127
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