Flash Memory SAMSUNG k5
Abstract: SAMSUNG MCP samsung k5 mcp ba43 ba4410 MCP Electronics Samsung K5 Samsung K5 BA6411 BA4210
Text: Preliminary MCP MEMORY K5A3x80YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary
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K5A3x80YT
4Mx8/2Mx16)
1Mx8/512Kx16)
69-Ball
08MAX
Flash Memory SAMSUNG k5
SAMSUNG MCP
samsung k5 mcp
ba43
ba4410
MCP Electronics Samsung K5
Samsung K5
BA6411
BA4210
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SAMSUNG MCP
Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary
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K5A3x40YT
4Mx8/2Mx16)
512Kx8/256Kx16)
512tRDR
69-Ball
08MAX
SAMSUNG MCP
samsung K5 MCP
BA35
BA4110
ba4410
BA651
Flash Memory SAMSUNG k5
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transistor sr61
Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K5T6432YT
4Mx16)
2Mx16)
81-Ball
80x11
transistor sr61
BA107
transistor BA29
BA27 chip transistor
BA106
BA99
SAMSUNG MCP
A21-A7
transistor ba31
ba30 transistor
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ba4410
Abstract: Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221
Text: K5A3x41YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (2Mx16) Dual Bank NOR Flash Memory / 4M(256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0 Final Specification
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K5A3x41YT
2Mx16)
256Kx16)
66-Ball
80x11
08MAX
ba4410
Samsung MCP
Flash Memory SAMSUNG k5
dual diode BA45
BA6511
samsung MCP K5
BA40
BA-36
BA5111
bga221
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SAMSUNG MCP
Abstract: Flash Memory SAMSUNG k5 samsung K5 MCP A3280 A3380
Text: K5A3x80YT B B MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft February 22, 2002 Preliminary 1.0
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K5A3x80YT
4Mx8/2Mx16)
1Mx8/512Kx16)
69-Ball
08MAX
SAMSUNG MCP
Flash Memory SAMSUNG k5
samsung K5 MCP
A3280
A3380
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SAMSUNG MCP
Abstract: Flash Memory SAMSUNG k5 A3240 BA35 samsung K5 MCP ba4410
Text: K5A3x40YT B B MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft February 22, 2002 Preliminary 1.0
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K5A3x40YT
4Mx8/2Mx16)
512Kx8/256Kx16)
69-Ball
08MAX
SAMSUNG MCP
Flash Memory SAMSUNG k5
A3240
BA35
samsung K5 MCP
ba4410
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Untitled
Abstract: No abstract text available
Text: K8D3x16UTC / K8D3x16UBC NOR FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
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K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
48FBGA
200ns.
08MAX
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Untitled
Abstract: No abstract text available
Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
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K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
047MAX
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samsung K5 MCP
Abstract: SAMSUNG MCP 152x16 Flash Memory SAMSUNG k5 K5A3240YT A3240 A3340 BA5111 BA4410
Text: Preliminary MCP MEMORY K5A3x40YT B C Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark November 6, 2002 Preliminary
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K5A3x40YT
4Mx8/2Mx16)
512Kx8/256Kx16)
512KtRDR
69-Ball
08MAX
samsung K5 MCP
SAMSUNG MCP
152x16
Flash Memory SAMSUNG k5
K5A3240YT
A3240
A3340
BA5111
BA4410
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BA17
Abstract: K8D3216UT K8D3216
Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
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K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
48FBGA
08MAX
BA17
K8D3216UT
K8D3216
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48FBGA
Abstract: BGA24 ba3101 BA4910 ba4410 BA4111
Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
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K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
48FBGA
08MAX
BGA24
ba3101
BA4910
ba4410
BA4111
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SAMSUNG MCP
Abstract: A3380 transistor ba47 A3280 BA431 Flash Memory SAMSUNG k5 ba3310 samsung K5 MCP
Text: Preliminary MCP MEMORY K5A3x80YT B C Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark November 6, 2002 Preliminary
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K5A3x80YT
4Mx8/2Mx16)
1Mx8/512Kx16)
69-Ball
08MAX
SAMSUNG MCP
A3380
transistor ba47
A3280
BA431
Flash Memory SAMSUNG k5
ba3310
samsung K5 MCP
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Untitled
Abstract: No abstract text available
Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
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K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
047MAX
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samsung K5 MCP
Abstract: Flash Memory SAMSUNG k5 SAMSUNG MCP A3380 A3280 ba6411
Text: K5A3x80YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0 Final Specification
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K5A3x80YT
4Mx8/2Mx16)
1Mx8/512Kx16)
69-Ball
08MAX
samsung K5 MCP
Flash Memory SAMSUNG k5
SAMSUNG MCP
A3380
A3280
ba6411
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samsung k5 mcp
Abstract: SAMSUNG MCP A3240 Flash Memory SAMSUNG k5
Text: K5A3x40YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0
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K5A3x40YT
4Mx8/2Mx16)
512Kx8/256Kx16)
69-Ball
08MAX
samsung k5 mcp
SAMSUNG MCP
A3240
Flash Memory SAMSUNG k5
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k8a55
Abstract: BA251 samsung nor flash BA253 BA217 BA155 ba198
Text: Rev. 1.0, Nov. 2010 K8A56 57 ET(B)(Z)C 256Mb C-die NOR FLASH 16M x16, Synch Burst Multi Bank SLC NOR Flash datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8A56
256Mb
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
0090000h-009FFFFh
0080000h-008FFFFh
0070000h-007FFFFh
k8a55
BA251
samsung nor flash
BA253
BA217
BA155
ba198
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samsung nor flash
Abstract: K8A3215ET 555H
Text: NOR FLASH MEMORY K8A3215ET B E 32Mb E-die NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8A3215ET
018000h-01FFFFh
010000h-017FFFh
008000h-00FFFFh
007000h-007FFFh
006000h-006FFFh
005000h-005FFFh
004000h-004FFFh
003000h-003FFFh
002000h-002FFFh
samsung nor flash
555H
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8A3215ET B E 32Mb E-die NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8A3215ET
0A0000h-0A7FFFh
098000h-09FFFFh
090000h-097FFFh
088000h-08FFFFh
080000h-087FFFh
078000h-07FFFFh
070000h-077FFFh
068000h-06FFFFh
060000h-067FFFh
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samsung nor flash
Abstract: BA102 BA127 Diode BA134 samsung nor K8A6415EBB
Text: NOR FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8A6415ET
couldre17.
54MHz
A0-A21
00000FH
00001FH
00002FH
000000H
samsung nor flash
BA102
BA127 Diode
BA134
samsung nor
K8A6415EBB
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samsung nor flash
Abstract: K8S3215ET 2269H NOR FLASH
Text: NOR FLASH MEMORY K8S3215ET B E 32Mb E-die NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8S3215ET
0000h
128words
000000h-00007Fh
44-Ball
samsung nor flash
2269H
NOR FLASH
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY K8S3215ET B E 32Mb E-die NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8S3215ET
K8S3215EBE)
128words
000000h-00007Fh
0000h
44-Ball
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BA99
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8A6415ET
54MHz
A0-A21
00000FH
00001FH
00002FH
000000H
BA99
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BA100 diode
Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance
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K5C6481NT
4Mx16)
512Kx16)
512Kx10
81-Ball
80x11
BA100 diode
BA102
ba107
Samsung MCP
BA125 Diode
diode ba102
BA134
BA100
BA106
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Untitled
Abstract: No abstract text available
Text: Rev. 1.2, Sep. 2010 K8S6815ET B D 64Mb D-die SLC NOR FLASH 7.5x5, 44FBGA, 8M Partition, x16, Muxed Burst, 8Banks 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8S6815ET
44FBGA,
070000h-077FFFh
068000h-06FFFFh
060000h-067FFFh
058000h-05FFFFh
050000h-057FFFh
048000h-04FFFFh
040000h-047FFFh
038000h-03FFFFh
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