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    FM1808

    Abstract: e1 fram FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S MS-013 water level electrical control circuit diagram
    Text: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules


    Original     		PDF FM1808 256Kb 256Kbit FM1808 256-kilobit MS-011 e1 fram FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S MS-013 water level electrical control circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A16A AEC-Q100 MR2A16A 304-bit EST00193 Rev10

    MR2A08AMYS35

    Abstract: AECQ-100 MR2A08AYS35 BGA 8 x 8 tray MR2A08A
    Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A 20-years AEC-Q100 MR2A08A 304-bit 1-877-347-MRAM EST170 MR2A08AMYS35 AECQ-100 MR2A08AYS35 BGA 8 x 8 tray

    AN6022

    Abstract: sonos
    Text: AN6022 - A Comparison between nvSRAMs and BBSRAMs AN6022 Author: Ravi Prakash Associated Project: No Associated Application Notes: None Application Note Abstract This application note describes the comparison of features, capabilities, and benefits between Cypress nvSRAM and


    Original     		PDF AN6022 AN6022 sonos

    Untitled

    Abstract: No abstract text available
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A16A AEC-Q100 MR2A16A 304-bit EST00193 Rev10

    MR0A08B

    Abstract: MR0A08BC MR0A08BCYS35R
    Text: MR0A08B FEATURES 128K x 8 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR0A08B 20-years MR0A08B 576-bit MR0A08B, MR0A08BC MR0A08BCYS35R

    dallas nvram

    Abstract: dallas nvram DS1225AB DS1225Y 451 cross-reference DS1225AB M48Z35AY MK48Z08 MK48Z09 sonos nvsram
    Text: nvSRAM versus Battery Backed-up SRAM Introduction With lead-free initiatives being implemented globally for 2006, nvSRAMs have become a very popular choice for NVRAM selection. This white paper explores the additional advantages of nvSRAM over Battery backed SRAM BBSRAM ,


    Original     		PDF STK10CXX STK11CXX STK12CXX STK15CXX STK16CXX DS1225AB DS1225D DS1225Y MK48Z08 MK48Z09 dallas nvram dallas nvram DS1225AB DS1225Y 451 cross-reference DS1225AB M48Z35AY MK48Z08 MK48Z09 sonos nvsram

    MR2A16AMYS35

    Abstract: MR2A16A MR2A16AMA35
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A16A AEC-Q100 MR2A16A 304-bit MR2A16AMYS35 MR2A16AMA35

    MR2A16AC

    Abstract: tsop 48 PIN type2 MR2A16AMY MRAM MR2A16ACYS35R 44TSOP mr2a16amys35 MR2A16ATS35 MR2A16A 012MAX
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A16A 20-years AEC-Q100 MR2A16A 304-bit MR2A16horized MR2A16AC tsop 48 PIN type2 MR2A16AMY MRAM MR2A16ACYS35R 44TSOP mr2a16amys35 MR2A16ATS35 012MAX

    MR2A16A

    Abstract: MR2A16AMA35 6726 power transistor MR2A16ACMA35 MR2A16ATS35C
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A16A 20-years MR2A16A 304-bit EST00193 MR2A16A, MR2A16AMA35 6726 power transistor MR2A16ACMA35 MR2A16ATS35C

    MR2A08A

    Abstract: MARK W1 TSOP zd 409 MR2A08AYS35 MR2A08AMA35 MR2A08
    Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A 20-years MR2A08A 304-bit EST00170 MR2A08A, MARK W1 TSOP zd 409 MR2A08AYS35 MR2A08AMA35 MR2A08

    BBSRAM

    Abstract: nvsram AN6063
    Text: Application Note AN6063 Replacing BBSRAM with Cypress nvSRAM- AN6063 Typical nvSRAM Connection with Memory Controller Figure 1. Typical NVSRAM Circuit Under normal operating conditions, read or write operations are functionally identical to a standalone SRAM. Using parallel IO structure user can easily store data or fetch data from


    Original     		PDF AN6063 BBSRAM nvsram AN6063

    Untitled

    Abstract: No abstract text available
    Text: MR2A08A 512K x 8 MRAM Memory FEATURES • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A AEC-Q100 MR2A08A EST00170

    AEC-Q100

    Abstract: MR2A08A MR2A08AYS35
    Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A AEC-Q100 MR2A08A 304-bit EST00170 MR2A08AYS35

    AN6022

    Abstract: SRAM 6T micrologic DS1225Y ds1225ab circuit diagram DS1225AB DS1250W M48Z512AY sonos BBSRAM
    Text: A Comparison between nvSRAMs and BBSRAMs AN6022 Application Note Abstract This application note describes the comparison of features, capabilities, and benefits between Cypress nvSRAM and BBSRAMs. Introduction What is nvSRAM? With lead-free initiatives being implemented globally,


    Original     		PDF AN6022 AN6022 SRAM 6T micrologic DS1225Y ds1225ab circuit diagram DS1225AB DS1250W M48Z512AY sonos BBSRAM

    FM28V100-TG

    Abstract: FM28V100-TGTR tca 335 A
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V100 128Kx8 33MHz 128Kx8 32-pin FM28V100 FM28V100, FM28V100-TG A9482296TG FM28V100-TGTR tca 335 A

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8

    Untitled

    Abstract: No abstract text available
    Text: FM22L16 4-Mbit 256 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 16 ❐ Configurable as 512 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original     		PDF FM22L16 151-year 25-ns 55-ns 110-ns

    Untitled

    Abstract: No abstract text available
    Text: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and


    Original     		PDF FM1608B 64-Kbit 64-Kbit 151-year 70-ns 130-ns

    tsop 48 PIN type2

    Abstract: 48BGA MR0A16AMA35
    Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature


    Original     		PDF MR0A16A 20-years MR0A16A 576-bit EST354 tsop 48 PIN type2 48BGA MR0A16AMA35

    0.35mm pitch BGA

    Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
    Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages


    Original     		PDF MR4A08B 20-years AEC-Q100 MR4A08B 216-bit MR4A08B, EST356 0.35mm pitch BGA MR4A08BCYS35R MR4A08BC mr4a08bcys MR4A08BCYS35

    FM18L08

    Abstract: FM20L08 FM20L08-60-TG
    Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM20L08 128Kx8 33MHz 128Kx8 FM18L08 FM20L08 FM20L08-60-TG

    FM1808

    Abstract: 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S
    Text: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		PDF FM1808 256Kb FM1808 256-kilobit MS-011 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S

    FM1808

    Abstract: 7058 FM1808-70-P FM1808-70-S MS-011 MS-013
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM1808 256Kb 256Kbit FM1808 256-kilobit MS-011 7058 FM1808-70-P FM1808-70-S MS-011 MS-013