FM1808
Abstract: e1 fram FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S MS-013 water level electrical control circuit diagram
Text: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules
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FM1808
256Kb
256Kbit
FM1808
256-kilobit
MS-011
e1 fram
FM1808-120-P
FM1808-120-S
FM1808-70-P
FM1808-70-S
MS-013
water level electrical control circuit diagram
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Untitled
Abstract: No abstract text available
Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A16A
AEC-Q100
MR2A16A
304-bit
EST00193
Rev10
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MR2A08AMYS35
Abstract: AECQ-100 MR2A08AYS35 BGA 8 x 8 tray MR2A08A
Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A08A
20-years
AEC-Q100
MR2A08A
304-bit
1-877-347-MRAM
EST170
MR2A08AMYS35
AECQ-100
MR2A08AYS35
BGA 8 x 8 tray
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PDF
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AN6022
Abstract: sonos
Text: AN6022 - A Comparison between nvSRAMs and BBSRAMs AN6022 Author: Ravi Prakash Associated Project: No Associated Application Notes: None Application Note Abstract This application note describes the comparison of features, capabilities, and benefits between Cypress nvSRAM and
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AN6022
AN6022
sonos
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PDF
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Untitled
Abstract: No abstract text available
Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A16A
AEC-Q100
MR2A16A
304-bit
EST00193
Rev10
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PDF
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MR0A08B
Abstract: MR0A08BC MR0A08BCYS35R
Text: MR0A08B FEATURES 128K x 8 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR0A08B
20-years
MR0A08B
576-bit
MR0A08B,
MR0A08BC
MR0A08BCYS35R
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PDF
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dallas nvram
Abstract: dallas nvram DS1225AB DS1225Y 451 cross-reference DS1225AB M48Z35AY MK48Z08 MK48Z09 sonos nvsram
Text: nvSRAM versus Battery Backed-up SRAM Introduction With lead-free initiatives being implemented globally for 2006, nvSRAMs have become a very popular choice for NVRAM selection. This white paper explores the additional advantages of nvSRAM over Battery backed SRAM BBSRAM ,
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STK10CXX
STK11CXX
STK12CXX
STK15CXX
STK16CXX
DS1225AB
DS1225D
DS1225Y
MK48Z08
MK48Z09
dallas nvram
dallas nvram DS1225AB
DS1225Y
451 cross-reference
DS1225AB
M48Z35AY
MK48Z08
MK48Z09
sonos
nvsram
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MR2A16AMYS35
Abstract: MR2A16A MR2A16AMA35
Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A16A
AEC-Q100
MR2A16A
304-bit
MR2A16AMYS35
MR2A16AMA35
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MR2A16AC
Abstract: tsop 48 PIN type2 MR2A16AMY MRAM MR2A16ACYS35R 44TSOP mr2a16amys35 MR2A16ATS35 MR2A16A 012MAX
Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A16A
20-years
AEC-Q100
MR2A16A
304-bit
MR2A16horized
MR2A16AC
tsop 48 PIN type2
MR2A16AMY
MRAM
MR2A16ACYS35R
44TSOP
mr2a16amys35
MR2A16ATS35
012MAX
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MR2A16A
Abstract: MR2A16AMA35 6726 power transistor MR2A16ACMA35 MR2A16ATS35C
Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A16A
20-years
MR2A16A
304-bit
EST00193
MR2A16A,
MR2A16AMA35
6726 power transistor
MR2A16ACMA35
MR2A16ATS35C
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MR2A08A
Abstract: MARK W1 TSOP zd 409 MR2A08AYS35 MR2A08AMA35 MR2A08
Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A08A
20-years
MR2A08A
304-bit
EST00170
MR2A08A,
MARK W1 TSOP
zd 409
MR2A08AYS35
MR2A08AMA35
MR2A08
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BBSRAM
Abstract: nvsram AN6063
Text: Application Note AN6063 Replacing BBSRAM with Cypress nvSRAM- AN6063 Typical nvSRAM Connection with Memory Controller Figure 1. Typical NVSRAM Circuit Under normal operating conditions, read or write operations are functionally identical to a standalone SRAM. Using parallel IO structure user can easily store data or fetch data from
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AN6063
BBSRAM
nvsram
AN6063
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Untitled
Abstract: No abstract text available
Text: MR2A08A 512K x 8 MRAM Memory FEATURES • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A08A
AEC-Q100
MR2A08A
EST00170
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PDF
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AEC-Q100
Abstract: MR2A08A MR2A08AYS35
Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A08A
AEC-Q100
MR2A08A
304-bit
EST00170
MR2A08AYS35
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AN6022
Abstract: SRAM 6T micrologic DS1225Y ds1225ab circuit diagram DS1225AB DS1250W M48Z512AY sonos BBSRAM
Text: A Comparison between nvSRAMs and BBSRAMs AN6022 Application Note Abstract This application note describes the comparison of features, capabilities, and benefits between Cypress nvSRAM and BBSRAMs. Introduction What is nvSRAM? With lead-free initiatives being implemented globally,
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AN6022
AN6022
SRAM 6T
micrologic
DS1225Y
ds1225ab circuit diagram
DS1225AB
DS1250W
M48Z512AY
sonos
BBSRAM
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FM28V100-TG
Abstract: FM28V100-TGTR tca 335 A
Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
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FM28V100
128Kx8
33MHz
128Kx8
32-pin
FM28V100
FM28V100,
FM28V100-TG
A9482296TG
FM28V100-TGTR
tca 335 A
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM28V020
256Kbit
FM28V020
FM28V020-TG,
FM28V020-TG
A9482296TG
32Kx8
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Untitled
Abstract: No abstract text available
Text: FM22L16 4-Mbit 256 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 16 ❐ Configurable as 512 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes
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FM22L16
151-year
25-ns
55-ns
110-ns
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Untitled
Abstract: No abstract text available
Text: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and
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FM1608B
64-Kbit
64-Kbit
151-year
70-ns
130-ns
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tsop 48 PIN type2
Abstract: 48BGA MR0A16AMA35
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature
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MR0A16A
20-years
MR0A16A
576-bit
EST354
tsop 48 PIN type2
48BGA
MR0A16AMA35
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0.35mm pitch BGA
Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages
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MR4A08B
20-years
AEC-Q100
MR4A08B
216-bit
MR4A08B,
EST356
0.35mm pitch BGA
MR4A08BCYS35R
MR4A08BC
mr4a08bcys
MR4A08BCYS35
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FM18L08
Abstract: FM20L08 FM20L08-60-TG
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
FM18L08
FM20L08
FM20L08-60-TG
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FM1808
Abstract: 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S
Text: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process
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FM1808
256Kb
FM1808
256-kilobit
MS-011
1kx8
FM1808-120-P
FM1808-120-S
FM1808-70-P
FM1808-70-S
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PDF
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FM1808
Abstract: 7058 FM1808-70-P FM1808-70-S MS-011 MS-013
Text: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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FM1808
256Kb
256Kbit
FM1808
256-kilobit
MS-011
7058
FM1808-70-P
FM1808-70-S
MS-011
MS-013
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PDF
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