Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BFR96 TRANSISTOR Search Results

    BFR96 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BFR96 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor bfr96

    Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
    Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold


    Original     		PDF BFR96/D BFR96 BFR96 BFR96/D* DEVICEBFR96/D transistor bfr96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola

    transistor bfr96

    Abstract: BFR96 bfr96 equivalent ASI10784
    Text: BFR96 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The BFR96 is Designed for Class A Television Band IV- V Amplifier Applications Requiring High Linearity. A 45° B FEATURES: • PG = 7.0 dB Typical at 860 MHz • IMD3 = -63 dBc Typ. at PREF = 0.5 W


    Original     		PDF BFR96 BFR96 ASI10784 transistor bfr96 bfr96 equivalent ASI10784

    Untitled

    Abstract: No abstract text available
    Text: j. ts TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain - Bandwidth Product, fT = 4.5 GHz (typ) @ 1C = 50 mA •


    Original     		PDF BFR96 10Vdc,

    bfr96

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original     		PDF BFR96 bfr96

    BFR96

    Abstract: s-parameter 2N3866A transistor bfr96 bfr96 equivalent 2N4427 equivalent bfr91 2N4427 2N5109 2N5179 2N6255 BFR96G
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA


    Original     		PDF BFR96 BFR96G BFR96 s-parameter 2N3866A transistor bfr96 bfr96 equivalent 2N4427 equivalent bfr91 2N4427 2N5109 2N5179 2N6255 BFR96G

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA


    Original     		PDF BFR96 BFR96G

    BFR96

    Abstract: MSC1309 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original     		PDF BFR96 2N5179 2N2857 MRF517 2N5109 MRF5943C MRF5943, MSC1309 BFR96 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607

    BFR96

    Abstract: No abstract text available
    Text: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz typ @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T


    Original     		PDF BFR96 MRF5812, MRF559 MRF8372 MRF557 MRF557T BFR96

    transistor bfr96

    Abstract: BFR96 SOT-37 SOT37 bfr96 equivalent sot 37
    Text: BFR96 N-P-N bipolar silicon RF transistor in plastic package SOT-37 5.2max 5.5max 9.0max 1.5max 1.0max 2 5.5max 1 3 Pinouts: 1- Base, 2- Collector, 3-Emitter Ratings Symbol VCBO VCEO VEBO IC Ptot Parameter, unit Limits Collector- base voltage, V Collector- emitter voltage, V


    Original     		PDF BFR96 OT-37 500MHz transistor bfr96 BFR96 SOT-37 SOT37 bfr96 equivalent sot 37

    BFR96

    Abstract: MRF586 bfr96 equivalent
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original     		PDF BFR96 2N5179 2N2857 MRF517 2N5109 MRF5943C MRF5943, BFR96 MRF586 bfr96 equivalent

    NE56755

    Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S NE56755 BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s

    BF907

    Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14

    BFR96

    Abstract: BFR96 TRANSISTOR transistor bfr96
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers


    OCR Scan     		PDF BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96

    4000 npn

    Abstract: 122e
    Text: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106


    OCR Scan     		PDF BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 4000 npn 122e

    BFR96 philips

    Abstract: No abstract text available
    Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		PDF BFR96 BFR96/02 ON4487) hbS3T31 BFR96 philips

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 0032S14 TSO Philips Semiconductors MB APX Product specification NPN 5 GHz wideband transistor crystal X3A-BFR96 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFR96S SOT37 , BFQ63 (TO-72) and BFR106 (SOT23). Crystals are supplied as whole


    OCR Scan     		PDF 0032S14 X3A-BFR96 BFR96S BFQ63 BFR106

    BFR96

    Abstract: BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor
    Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor DESCRIPTION VllDfiEb D04577b lfl7 « P H I N SbE D PHILIPS INTERNA TIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		PDF BFR96 DD4S77b ON4487) BFQ32. coll801 711082b BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor

    BFR96

    Abstract: BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96
    Text: Philips Semiconductors Product specification - 3 /- . Z 3 NPN 5 GHz wideband transistor DESCRIPTION 711002b 004577b 1A7 • P H I N 5bE D PHILIPS INTERNATIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		PDF ON4487) BFQ32. BFR96 711DflSb r-31-23 711Dfl2b BFR96 BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96

    SL2128

    Abstract: MRF965 MRF961 BFRC96 case 317-01
    Text: MOTOROLA SC XSTRS/R F 4bE b3b7HS4 D 00=14173 b • MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H FREQ UENCY TRANSISTORS The B FR 96 series transistors use the same state-of-the-art m icro ­


    OCR Scan     		PDF BFR96 BFRC96 MRF961 MRF962 MRF965 BFR96, BFRC96, MRF961, SL2128 MRF965 case 317-01

    BFR96S

    Abstract: transistor bfr96 BFQ63 BFR96 BFR106 X3A-BFR96 35331
    Text: b b S 3 cì31 Q032E14 T50 ^ B A P X Philips S em iconductors Product specification NPN 5 GHz wideband transistor crystal X3A-BFR96 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFR96S SOT37 , BFQ63 (TO-72) and BFR106 (SOT23). Crystals are supplied as whole


    OCR Scan     		PDF BFR96S BFQ63 BFR106 X3A-BFR96 X3A-BFR96 RV-3-5-52/733 BFR96S transistor bfr96 BFQ63 BFR96 BFR106 35331

    transistor bfr96

    Abstract: BFR96 philips BFR96 BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor BFR96 pins resistance BFQ32 Transistor 933
    Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0031ÛÔ7 b fll M APX Product specification BFR96 NPN 5 GHz wideband transistor N AMER PHILIPS/DISCRETE DESCRIPTION □TE D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		PDF bbS3131 BFR96 ON4487) BFQ32. transistor bfr96 BFR96 philips BFR96 BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor BFR96 pins resistance BFQ32 Transistor 933

    BFR96

    Abstract: No abstract text available
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n H igh -Frequ en cy Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers


    OCR Scan     		PDF BFR96 BFR96

    X3A-BFR96

    Abstract: transistor bfr96 BFR96S BFR96 BFQ63 crystal PHILIPS BFR106
    Text: P h ilip s S em icon du ctors T 3 l '^ o NPN 5 GHz wideband transistor crystal PHILIPS INTERNATIONAL Produ ct sp ecification SbE D • X3A-BFR96 IPHIN 711Gß2b OaMblQH 4^2 M E C H A N IC A L DATA D ESCRIPTION Crystal N PN crystal used in BFR 96S SOT37 , BFQ63 (TO-72)


    OCR Scan     		PDF BFR96S BFQ63 BFR106 X3A-BFR96 X3A-BFR96 711Gfi2b URV-3-5-52/733 transistor bfr96 BFR96S BFR96 BFQ63 crystal PHILIPS BFR106

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers


    OCR Scan     		PDF BFR96 Transistor C G 774 6-1 C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1