Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
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K3519PQ-XH
K3519PQ-XH
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
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K3519PQ-XH
K3519PQ-XH
180um
470ea
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k351
Abstract: common-drain
Text: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
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Original
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K3519PQ-XH
K3519PQ-XH
180um
470ea
k351
common-drain
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PDF
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K352
Abstract: K3520PQ-XH K3520
Text: SEMICONDUCTOR K3520PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
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Original
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K3520PQ-XH
K3520PQ-XH
180um
470ea
K352
K3520
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR K3520PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
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Original
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K3520PQ-XH
K3520PQ-XH
180um
470ea
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR K3520PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
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K3520PQ-XH
K3520PQ-XH
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74153
Abstract: si6888
Text: SPICE Device Model Si6888EDQ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si6888EDQ
18-Jul-08
74153
si6888
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PDF
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Si8900EDB
Abstract: No abstract text available
Text: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si8900EDB
18-Jul-08
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PDF
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Si8904EDB
Abstract: No abstract text available
Text: SPICE Device Model Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si8904EDB
18-Jul-08
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PDF
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Si8902EDB
Abstract: No abstract text available
Text: SPICE Device Model Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si8902EDB
S-60075Rev.
23-Jan-06
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PDF
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Si8902EDB
Abstract: No abstract text available
Text: SPICE Device Model Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si8902EDB
18-Jul-08
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PDF
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74152
Abstract: 74152 data sheet 74152 datasheet si6868
Text: SPICE Device Model Si6868EDQ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si6868EDQ
18-Jul-08
74152
74152 data sheet
74152 datasheet
si6868
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PDF
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Si8904EDB
Abstract: No abstract text available
Text: SPICE Device Model Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si8904EDB
S-60075Rev.
23-Jan-05
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PDF
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Si8900EDB
Abstract: A1731
Text: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si8900EDB
S-60073Rev.
23-Jan-06
A1731
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PDF
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LND01K1-G
Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement
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LND01
LND01
DSFP-LND01
A042712
LND01K1-G
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement
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Original
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LND01
LND01
DSFP-LND01
A073012
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PDF
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement
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Original
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LND01
LND01
DSFP-LND01
B031414
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PDF
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement
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Original
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LND01
LND01
DSFP-LND01
NR073012
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PDF
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Si6876BEDQ
Abstract: No abstract text available
Text: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS
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Si6876BEDQ
Si6876BEDQ-T1--E3
S-40581--Rev.
29-Mar-04
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Untitled
Abstract: No abstract text available
Text: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS
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Si6876EDQ
08-Apr-05
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Si6876BEDQ
Abstract: Si6876EDQ SI6876EDQT1E3
Text: Specification Comparison Vishay Siliconix Si6876BEDQ vs. Si6876EDQ Description: Bi-Directional N-Channel, 30 V D-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6876BEDQ-T1 Replaces Si6876EDQ-T1 Si6876BEDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6876EDQ-T1-E3 (Lead (Pb)-free version)
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Si6876BEDQ
Si6876EDQ
Si6876BEDQ-T1
Si6876EDQ-T1
Si6876BEDQ-T1-E3
Si6876EDQ-T1-E3
09-Nov-06
SI6876EDQT1E3
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DIODE S2
Abstract: 21A 8 BALL IRF6156
Text: PD - 94592 IRF6156 Ultra Low RSS on per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l ESD Protection Diode Description l FlipFET Power MOSFET VSS 20V RSS(on) max
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IRF6156
IA-481
IA-541.
DIODE S2
21A 8 BALL
IRF6156
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5G2R
Abstract: Si6876EDQ
Text: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rSS(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS
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Si6876EDQ
S-20462--Rev.
15-Apr-02
5G2R
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PDF
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Siliconix 511
Abstract: No abstract text available
Text: SÌ3831DV Vishay Siliconix Bi-Directional P-Ch MOSFET/Power Switch New Product V B* V > Ros (o n (&) ±7 Id W 0 .170 VGg = -4 .5 V ±2.4 0.240 @ VGS = “ 2-5 V ±2,0 & FEATURES • • • • Low rps(on) Symmetrical P-Channel MOSFET Integrated Body Bias For Bi-Directional Blocking
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OCR Scan
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3831DV
988-B000
S-56944--
23-Nov-98
Siliconix 511
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PDF
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