2SC2338
Abstract: NE567 NE56787 NE56708 NE56700 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567
Text: NEC/ CALIFORNIA 15E D bM27M14 0 0 0 14 05 b NE56700 NE56708 NE56787 NPN SILICON HIGH FREQUENCY TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES • HIGH GAIN BANDWIDTH PRODUCT PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 25 VCEO Collector to Emitter Voltage
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b427414
T-31-21
NE56700
NE56708
NE56787
NE567
2SC2338
NE56787
S21E
T-31-21
transistor 7350
IC CHIP 5270
IC NE567
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2SA1224
Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Text: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de
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00GS512
NE90100
NE90115
NE74014
NE901
NE90115
2SA1224
NEC JAPAN 3167
1S955
NE74014
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UPB565C
Abstract: UPB565 SO-64 T-45-19-13 nec tv
Text: NEC/ CALIFORNIA C 30E » bMETMlM DODSlOa 5 « N E C C 7 = y .r-j9 -j3 1 GHz HIGH SENSITIVITY PRESCALER UPB565C The UPB565C is a general purpose prescaler intended for use in PLL Digital Tuning System. It operates up to 1 GHz utilizing advanced bipolar process technology. This prescaler provides +64, +8, +4 and +2 division ratio, and can
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000E10Ã
UPB565C
UPB565C
PB565C
34-6393/FAX
UPB565
SO-64
T-45-19-13
nec tv
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2SC2570
Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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bM27414
QDDB354
T3V-23
NE021
2SC2570
2sc2570 transistor
transistor 2sc2570
NE02103
NE02133
2sc1560
ic 2SC2570
NE02132
NE02100
NE02135
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