BUP314
Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for
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O-220
O-218
BUP314
BUP307
igbt types
siemens bup314
BUP401
BUZ334
BUZ MOSFET
MOSFET welding INVERTER
334 mosfet
flyback inverter welding
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SGP02N60
Abstract: SGU02N60 SGB02N60 SGD02N60 BUP410D
Text: Preliminary data SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:
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SGP02N60,
SGB02N60,
SGD02N60,
SGU02N60
SGP02N60
O-220AB
Q67041-A4707-A2
SGB02N60
O-263AB
Q67041-A4707-A4
SGP02N60
SGU02N60
SGB02N60
SGD02N60
BUP410D
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BUP410D
Abstract: SGB06N60 SGD06N60 SGP06N60 SGU06N60
Text: Preliminary data SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:
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SGP06N60,
SGB06N60,
SGD06N60,
SGU06N60
SGP06N60
O-220AB
Q67041-A4709-A2
SGB06N60
O-263AB
Q67041-A4709-A4
BUP410D
SGB06N60
SGD06N60
SGP06N60
SGU06N60
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2A mosfet igbt driver stage
Abstract: igbt qualification circuit S-IGBT igbt 600V IGBT 600V 16 siemens igbt UPS SIEMENS zvs flyback driver BUP410 SGP06N60
Text: TECHNOLOGY A MOSFET alternative for switching frequencies up to more than 300 kHz High-speed 600V IGBT in NPT technology Because of its many advantages over PT technology, NPT technology has gained increasing acceptance for IGBTs with breakdown voltages of over 1 kV. Siemens is now continuing this logical progression with
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00V-NPT-IGBT,
2A mosfet igbt driver stage
igbt qualification circuit
S-IGBT
igbt 600V
IGBT 600V 16
siemens igbt
UPS SIEMENS
zvs flyback driver
BUP410
SGP06N60
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SGP02N60
Abstract: BUP410D
Text: SGP02N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP02N60 600V 2A TO-220 AB Q67040-A . . . . Maximum Ratings
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SGP02N60
O-220
Q67040-A
BUP410D
Apr-07-1998
SGP02N60
BUP410D
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Q67041-A4709
Abstract: BUP410D SGP06N60
Text: SGP06N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP06N60 600V 6A TO-220 AB Q67041-A4709-A2 Maximum Ratings
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SGP06N60
O-220
Q67041-A4709-A2
BUP410D
Apr-07-1998
Q67041-A4709
BUP410D
SGP06N60
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BUP410D
Abstract: SGD04N60 SGB04N60 SGP04N60 SGU04N60 SIEMENS dpak diode
Text: Preliminary data SGP04N60, SGB04N60, SGD04N60, SGU04N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:
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PDF
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SGP04N60,
SGB04N60,
SGD04N60,
SGU04N60
SGP04N60
O-220AB
Q67041-A4708-A2
SGB04N60
O-263AB
Q67041-A4708-A4
BUP410D
SGD04N60
SGB04N60
SGP04N60
SGU04N60
SIEMENS dpak diode
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MOV 270/20
Abstract: BUP410D P-TO252 SGD06N60 BUP41
Text: SGD06N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGD06N60 600V 6A P-TO252 Q67040-A . . . . Maximum Ratings
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SGD06N60
P-TO252
Q67040-A
BUP410D
Apr-07-1998
MOV 270/20
BUP410D
P-TO252
SGD06N60
BUP41
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SGD04N60
Abstract: BUP410D P-TO252
Text: SGD04N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGD04N60 600V 4A P-TO252 Q67040-A . . . . Maximum Ratings
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SGD04N60
P-TO252
Q67040-A
BUP410D
Apr-07-1998
SGD04N60
BUP410D
P-TO252
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BUP410D
Abstract: P-TO252 SGD02N60
Text: SGD02N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGD02N60 600V 2A P-TO252 Q67040-A . . . . Maximum Ratings
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PDF
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SGD02N60
P-TO252
Q67040-A
BUP410D
Apr-07-1998
BUP410D
P-TO252
SGD02N60
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SGP04N60
Abstract: BUP410D
Text: SGP04N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP04N60 600V 4A TO-220 AB Q67040-A . . . . Maximum Ratings
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SGP04N60
O-220
Q67040-A
BUP410D
Apr-07-1998
SGP04N60
BUP410D
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP410D IGBT With Antiparallel Diode « Preliminary data A • Low forward voltage drop T • • High switching speed /X V % / ,.,íí Í • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Pin 3 E C Type ^CE h
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OCR Scan
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PDF
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BUP410D
O-220
67040-A4425-A2
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bup410d
Abstract: BUP41
Text: SIEMENS BUP 41 OD IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP410D ^CE 600V 13A C Pin 3 E Package Ordering Code
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OCR Scan
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PDF
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BUP410D
O-220
C67047-A4425-A2
BUP41
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VPT05155
Abstract: bup410d
Text: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .
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OCR Scan
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SGP04N60
SGP04N60
T05155
Q67040-A
O-220
BUP410D
Apr-07-1998
GPT05155
VPT05155
bup410d
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SIEMENS dpak diode
Abstract: No abstract text available
Text: Preliminary data SIEMENS SGP04N60, SGB04N60, SGD04N60, SGU04N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:
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OCR Scan
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PDF
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SGP04N60,
SGB04N60,
SGD04N60,
SGU04N60
SGP04N60
O-220AB
Q67041-A4708-A2
SGB04N60
O-263AB
Q67041-A4708-A4
SIEMENS dpak diode
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leistungstransistoren
Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m
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OCR Scan
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PDF
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O-220
BUZ12A
BUZ11S2
BUZ10S2
O-218
346S2
BUP410D
leistungstransistoren
bup314d
buz 342 G
siemens 230 95 O
BUP 307D
BUZ,350
BUZ,271
BUP400D
bup313d
BUP314
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Untitled
Abstract: No abstract text available
Text: SIEMENS SGP02N60 P re lim in a ry data IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 E C Type VCB h Package Ordering Code SGP02N60 600V 2A TO-220 AB Q67040-A . . . . Maximum Ratings Parameter Symbol Collector-emitter voltage ''CE Collector-gate voltage
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OCR Scan
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PDF
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SGP02N60
SGP02N60
Q67040-A
O-220
Apr-07-1998
BUP410D
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Untitled
Abstract: No abstract text available
Text: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:
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OCR Scan
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PDF
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SGP06N60,
SGB06N60,
SGD06N60,
SGU06N60
SGP06N60
O-220AB
Q67041-A4709-A2
SGB06N60
O-263AB
Q67041-A4709-A4
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bup41
Abstract: No abstract text available
Text: SIEMENS SGP06N60 P relim inary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE b Package Ordering Code SGP06N60 600V 6A TO-220 AB Q67041-A4709-A2 Maximum Ratings Parameter
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OCR Scan
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PDF
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SGP06N60
SGP06N60
O-220
Q67041-A4709-A2
BUP410D
Apr-07-1998
bup41
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Untitled
Abstract: No abstract text available
Text: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:
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OCR Scan
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PDF
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SGP06N60,
SGB06N60,
SGD06N60,
SGU06N60
SGP06N60
O-220AB
Q67041-A4709-A2
SGB06N60
O-263AB
Q67041-A4709-A4
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Untitled
Abstract: No abstract text available
Text: SIEMENS SGD06N60 P relim in ary data IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCB k Package Ordering Code SGD06N60 600V 6A P-T0252 Q67040-A . . . . Maximum Ratings Symbol Values UJ Parameter 600 Collector-emitter voltage Collector-gate voltage
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OCR Scan
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PDF
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SGD06N60
SGD06N60
Q67040-A
P-T0252
Apr-07-1998
BUP410D
GPT09051
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BUP 312
Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Text: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186
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OCR Scan
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PDF
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BUP200D
BUP314D
BUP410D
Q67078-A4400-A2
Q67040-A4420-A2
Q67078-A4401-A2
Q67078-A4402-A2
Q67040-A4407-A2
Q67078-A4203-A2
Q67078-A4205-A2
BUP 312
BUZ22
276 603d
BUZ 81
bup300
buz171
BUZ,350
BUZ,271
BUZ90A
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