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Infineon Technologies AG BUZ20 TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,14A I(D),TO-220AB
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Quest Components	BUZ20		200			1 $2.3 10 $2.3 100 $1.15 1000 $0.92 10000 $0.92	Buy Now
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STMicroelectronics BUZ20 N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Minimum DS Breakdown Voltage: 100 V; No. of Terminals: 3;
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Vyrian	BUZ20		151			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BUZ20 Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
BUZ20	Infineon Technologies	Power MOSFET, 100V, TO-220, RDSon=0.2 ?, 13.5A, NL	Original	PDF
BUZ 20	Infineon Technologies	Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 13.5A, NL	Original	PDF
BUZ20	Intersil	12A, 100V, 0.200 ?, N-Channel Power MOSFET	Original	PDF
BUZ20	Philips Semiconductors	PowerMOS Transistor	Original	PDF
BUZ20	Siemens		Original	PDF
BUZ20	Siemens	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)	Original	PDF
BUZ20	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
BUZ20	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
BUZ20	International Rectifier	RF and BUZ Series Power MOSFETs - N-Channel	Scan	PDF
BUZ20	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
BUZ20	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BUZ20	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BUZ20	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BUZ20	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

BUZ20	Unknown	FET Data Book	Scan	PDF
BUZ20	Semelab	MOS Power Transistor	Scan	PDF
BUZ20	Siemens	Power Transistors	Scan	PDF
BUZ20	Siemens	SIPMOS Power Transistor	Scan	PDF
BUZ20	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF
BUZ20	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF

BUZ20 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor BUZ20 Abstract: buz20s TA17411 mos n fet e 75w BUZ20 TB334 Text: BUZ20 Semiconductor Data Sheet 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET October 1998 File Number 2254.1 Features • 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.200Ω (BUZ20 field effect transistor designed for applications such as	Original	BUZ20 BUZ20 TA17411. transistor BUZ20 buz20s TA17411 mos n fet e 75w TB334	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
STK411-230E Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D	PDF
std2n52 Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232	Original	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent	PDF
A25473S Abstract: No abstract text available Text: SILXCONIX INC IfiE D UlSSKSs • A25473S DD14ST3 & ■ BUZ20_ T-3R -H N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW PRODUCT SUMMARY V BRjDSS rw 100 0.20 O b (A 12 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE 12 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)	OCR Scan	A25473S DD14ST3 BUZ20_ O-220AB BUZ20 T-39-11	PDF
P50N05 Abstract: p50n06 TP3055EL tp50n05e MTP36N06E Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2	OCR Scan	BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E	PDF
Untitled Abstract: No abstract text available Text: 7 ^ 5 3 7 OGESbbb fl • ' T ' - 3 C\| - H SGS-THOMSON BUZ20 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G TYPE BUZ20 30E S-THOMSON VDss 100 V ^DS on 0.2 SI D Id 12 A • 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE	OCR Scan	BUZ20 T10C/'	PDF
transistor BUZ20 Abstract: OC106 BUZ20 OC-106 toc106 Text: P n w p r M O S tr a n s is to r N AMER PHILIPS/DISCRETE _ BUZ20_ ObE D • LbS3T31 ODlMMlb 5 May 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	RTIZ20_ LbS3T31 BUZ20_ 0D14MES T-39-11 transistor BUZ20 OC106 BUZ20 OC-106 toc106	PDF
BUZ20 Abstract: No abstract text available Text: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics	OCR Scan	MOSFETs-BUZ20 O-220AB 92GS-441 BUZ20	PDF
BUZ10A Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70 Text: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B	OCR Scan	D04b3 BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 T0220 BUZ10A BUZ10A IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23	PDF
Untitled Abstract: No abstract text available Text: BUZ20 Semiconductor October 1998 Data Sheet 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,	OCR Scan	BUZ20 TA17411.	PDF
transistor BUZ20 Abstract: BUZ20 Text: fZ T SGS-THOMSON HD g(^ (ilL(i(g'ir»M(gi B U Z20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ20 100 V 0.2 ß 12 A • 100 VOLTS - FOR UPS AP PLICATIO NS • ULTRA FAST SW ITCHING • RATED FOR UNCLAM PED INDUCTIVE SW ITCHING (ENERGY TEST) ♦	OCR Scan	BUZ20 00A//xS transistor BUZ20 BUZ20	PDF
UZ20 Abstract: transistor BUZ20 BUZ20 Text: {£ H A J R R BUZ20 IS N -Channel Enhancem ent-M ode Power Field-E ffect Transistor August 1991 Package Features T 0 -2 2 0 A B • 12A, 100V TOP VIEW • rDS on) = ° - 2 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	OCR Scan	BUZ20 BUZ20 92GS-44175 UZ20 transistor BUZ20	PDF

buz11 Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05 Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12	OCR Scan	T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N	PDF
irf9110 Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034 Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) typ V g s ( 0 ) (V) typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB	OCR Scan	1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33	PDF
BUZ171 Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C Text: - 272 - f m % ± m Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) typ (A) typ (S) 3.0 1.0 6.0	OCR Scan	BSI07A O-226kk BS170 O-226AA BSS123 O-236AA O-220AB BUZ171 O-220ftB irf120 TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C	PDF
2N6155 Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64 Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64	PDF
BUZ171 Abstract: 8UZ11 SILICONIX t02G BUZ10 BUP67 BUP68 BUP69 BUP70 BUP71 Text: - 318 - f * A Vd s m £ tt ft Vg s %l ts Ta=25C Id Pd Vg s (th) Id s s I g ss or € % m 4# tos(on) Vp:>= 14 (Ta=25<C ) Ip(on) Ciss g fs Coss Vd g /CH * /CH (V) (A) (IV) V g s =0 (max) max min (nA) 500 ± 4 0 ±4 . 47 100 ±100 ±30 1000 500 3 6 1 2 10	OCR Scan	BUP67 O-204AA BUP68 T0-204AA BUP69 O-220AB BUZ171 O-220ftB irf120 to-204aa 8UZ11 SILICONIX t02G BUZ10 BUP70 BUP71	PDF
ISOWATT220 Abstract: No abstract text available Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30	OCR Scan	O-220 ISOWATT220 ISOWATT22Q STH107N50 STH10N50 STHI10N50 STHI10N50FI	PDF
sgs*P381 Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591 Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177	OCR Scan	P-220 ISOWATT220 O-220 O-220 STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI sgs*P381 ISOWATT218 IGBT STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
BUZ20 Abstract: No abstract text available Text: PnwprM OS transistor_ B IIZ 2 0 _ N AMER PHILIPS/DISCRETE ObE D • bb53T31 001441b 5 ■ T-31-n ' GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	bb53T31 001441b T-31-n BUZ20_ BUZ20 T-39-11 BUZ20	PDF
SGSP321 Abstract: sgsP381 SGSP381 SGSP201 MTP3055AFI STLT20 STLT20FI BUZ11S2FI SGSP591 IRF153 Text: Æ T SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊ IILIOT©R!ID gi POWER MOS @ >D Package Type V(BR DSS r DS (on) max (V) (0) (A) 60 60 60 60 60 0.15 0.15 0.15 0.13 0.08 6 7.5 7.5 8 20 ISOWATT 220 TO 220 ISOWATT 220 TO 220 TO 3 MTP3055AFI STLT20	OCR Scan	MTP3055AFI STLT20* STLT20FI SGSP321 IRF153 IRFP153 IRFP153FI STLT30* SGSP381 SGSP481 sgs*P381 SGSP201 STLT20 STLT20FI BUZ11S2FI SGSP591	PDF

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Infineon Technologies AG BUZ20

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BUZ20 Datasheets (38)

BUZ20 Datasheets Context Search

transistor BUZ20

sn76131

fqp60n06

STK411-230E

std2n52

A25473S

P50N05

Untitled

transistor BUZ20

BUZ20

BUZ10A

Untitled

transistor BUZ20

UZ20

buz11

irf9110

BUZ171

2N6155

BUZ171

ISOWATT220

sgs*P381

BPW22A

BUZ20

SGSP321