VFBGA
Abstract: BV48A BV36A
Text: Package Diagram VFBGA 36-Lead VFBGA 6 x 8 x 1 mm BV36A 51-85149-* 1 Package Diagram 48-Lead VFBGA (6 x 8 x 1 mm) BV48A 51-85150-* 2
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36-Lead
BV36A
48-Lead
BV48A
VFBGA
BV48A
BV36A
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Untitled
Abstract: No abstract text available
Text: CY62138EV30 MoBL ® 2-Mbit 256 K x 8 MoBL Static RAM 2-Mbit (256 K × 8) MoBL® Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62138EV30 is a high performance CMOS static RAM organized as 256K words by eight bits. This device features
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CY62138EV30
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Untitled
Abstract: No abstract text available
Text: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62138FV30
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Untitled
Abstract: No abstract text available
Text: CY62138EV30 MoBL ® 2-Mbit 256 K x 8 MoBL Static RAM 2-Mbit (256 K × 8) MoBL® Static RAM Functional Description Features The CY62138EV30 is a high performance CMOS static RAM organized as 256K words by eight bits. This device features advanced circuit design to provide ultra low active current. This
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CY62138EV30
CY62138CV30
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C
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CY62148EV30
CY62148E
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M24L28256SA
Abstract: VFBGA
Text: ESMT PSRAM M24L28256SA 2-Mbit 256K x 8 Pseudo Static RAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1 MHz •Low standby power •Automatic power-down when deselected
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M24L28256SA
M24L28256SA
VFBGA
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CY2XP304
Abstract: CY2XP304BVC CY2XP304BVCT CY2XP304BVI CY2XP304BVIT
Text: ADVANCE INFORMATION CY2XP304 High-Frequency Programmable PECL Clock Generation Module Features • HSTL inputs—HSTL-to-LVPECL level translation • 125- to 400-MHz output range for high-speed applications 500-MHz option available • Jitter peak-peak (TYPICAL) = 65 ps
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CY2XP304
400-MHz
500-MHz
36-VFBGA,
CY2XP304
CY2XP304BVC
CY2XP304BVCT
CY2XP304BVI
CY2XP304BVIT
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CY62148CV25
Abstract: CY62148CV30 CY62148CV33 CY62148DV30 CY62148DV30L CY62148DV30L-55BVI CY62148DV30LL
Text: ADVANCE INFORMATION CY62148DV30 512K x 8 MoBL Static RAM Features • Very high speed: 55 ns — Wide voltage range: 2.20V 1– 3.60V • Pin-compatible with CY62148CV25, CY62148CV30, and CY62148CV33 • Ultra low active power — Typical active current:1.5 mA @ f = 1 MHz
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CY62148DV30
CY62148CV25,
CY62148CV30,
CY62148CV33
55-ns
36-ball
32-pin
32-pin
CY62148DV30
CY62148CV25
CY62148CV30
CY62148CV33
CY62148DV30L
CY62148DV30L-55BVI
CY62148DV30LL
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WCMC2008V9B-55BVI
Abstract: WCMC2008V9B-70BVI
Text: WCMC2008V9B ADVANCE INFORMATION 2Mb 256K x 8 Pseudo Static RAM Features • • • • • • • power-down feature that reduces power consumption dramatically when deselected. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE)
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WCMC2008V9B
WCMC2008V9B
38-XXXXX
WCMC2008V9B-55BVI
WCMC2008V9B-70BVI
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Untitled
Abstract: No abstract text available
Text: CY2XP304 High-Frequency Programmable PECL Clock Generation Module Features • HSTL inputs—HSTL-to-LVPECL level translation • 125- to 500-MHz output range for high-speed applications • Period jitter peak-peak = 55 ps max at 125MHz • Four low-skew LVPECL outputs
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CY2XP304
125MHz
500-MHz
36-VFBGA,
CY2XP304
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413407
Abstract: No abstract text available
Text: CY2XP304 High-Frequency Programmable PECL Clock Generation Module Features • HSTL inputs—HSTL-to-LVPECL level translation • 40 ps typical peak-peak period jitter at 125 MHz • 125- to 500-MHz output range for high-speed applications • 30 ps typical output-output skew at 400 MHz
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CY2XP304
500-MHz
36-VFBGA,
CY2XP304
413407
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CY62148CV25
Abstract: CY62148CV30 CY62148CV33 CY62148V BA36B
Text: CY62148CV25/30/33 MoBL 512K x 8 MoBL Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ MoBL™ in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can be put into standby mode when deselected (CE HIGH).
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CY62148CV25/30/33
CY62148CV25:
CY62148CV30:
CY62148CV25/30/33
CY62148CV25
CY62148CV30
CY62148CV33
CY62148V
BA36B
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Untitled
Abstract: No abstract text available
Text: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62138FV30
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Functional Description Features The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62148EV30
CY62148E
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CY2XP306
Abstract: CY2XP306BVXI CY2XP306BVXIT
Text: PRELIMINARY CY2XP306 High-frequency Programmable PECL Clock Generation Module Features • 1–133 MHz Input Frequency Range • 62.5–500 MHz Output Frequency Range • 60 ps typical Cycle-to-Cycle Jitter • 36-pin VFBGA, 6 x 8 × 1 mm • 30 ps typical Output-Output Skew
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CY2XP306
36-pin
CY2XP306
CY2XP306BVXI
CY2XP306BVXIT
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CY62138CV
Abstract: CY62138CV25 CY62138CV25LL CY62138CV30 CY62138CV30LL CY62138CV33 CY62138V
Text: 38CV25/30/3 CY62138CV25/30/33 MoBL CY62138CV MoBL® 2M 256K x 8 Static RAM Features This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has
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38CV25/30/3
CY62138CV25/30/33
CY62138CV
CY62138CV25:
CY62138CV30:
CY62138CV33:
EnablY62138CV
CY62138CV25
CY62138CV25LL
CY62138CV30
CY62138CV30LL
CY62138CV33
CY62138V
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CY62138CV
Abstract: CY62138CV25 CY62138CV25LL CY62138CV30 CY62138CV30LL CY62138CV33 CY62138V ultra fine pitch BGA
Text: CY62138CV25/30/33 MoBL CY62138CV MoBL® 2M 256K x 8 Static RAM Features bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has
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CY62138CV25/30/33
CY62138CV
CY62138CV25:
CY62138CV30:
CY62138CV33:
CY62138CV25
CY62138CV25LL
CY62138CV30
CY62138CV30LL
CY62138CV33
CY62138V
ultra fine pitch BGA
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Untitled
Abstract: No abstract text available
Text: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62138FV30
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Untitled
Abstract: No abstract text available
Text: CY62138EV30 MoBL ® 2-Mbit 256 K x 8 MoBL Static RAM 2-Mbit (256 K × 8) MoBL® Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62138EV30 is a high performance CMOS static RAM organized as 256K words by eight bits. This device features
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CY62138EV30
CY62138CV30
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CY2XP304
Abstract: CY2XP304BVC CY2XP304BVCT CY2XP304BVI CY2XP304BVIT
Text: CY2XP304 High-Frequency Programmable PECL Clock Generation Module Features • HSTL inputs—HSTL-to-LVPECL level translation • 125- to 500-MHz output range for high-speed applications • Period jitter peak-peak 125MHz max. = 55 ps • Four low-skew LVPECL outputs
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CY2XP304
500-MHz
125MHz
36-VFBGA,
CY2XP304
CY2XP304BVC
CY2XP304BVCT
CY2XP304BVI
CY2XP304BVIT
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CY62138CV
Abstract: CY62138CV25 CY62138CV25LL CY62138CV30 CY62138CV30LL CY62138CV33 CY62138V
Text: CY62138CV25/30/33 MoBL CY62138CV MoBL® 2M 256K x 8 Static RAM Features bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has
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CY62138CV25/30/33
CY62138CV
CY62138CV25:
CY62138CV30:
CY62138CV33:
CY62138CV25
CY62138CV25LL
CY62138CV30
CY62138CV30LL
CY62138CV33
CY62138V
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