K7N167245A
Abstract: K7N167249A 326J
Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb 1. Speed bin merge.
|
Original
|
PDF
|
256Kx72
K7N167245A
256Kx72-Bit
K7N167249A
K7N167245A.
11x19
K7N167245A
326J
|
tc-l 11w
Abstract: K7N167245A K7N167249A
Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb 1. Speed bin merge.
|
Original
|
PDF
|
256Kx72
K7N167245A
256Kx72-Bit
K7N167249A
K7N167245A.
11x19
tc-l 11w
K7N167245A
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs 256Kx72 Synchronous Pipeline SRAM WEDPY256K72V-XBX Preliminary* FEATURES DESCRIPTION n Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS
|
Original
|
PDF
|
256Kx72
WEDPY256K72V-XBX
WEDPY256K72V-XBX
|
CS22
Abstract: dq35j fast sram 100mhz CS11 CS21 WEDPY256K72V-XBX DQ9-17
Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM Preliminary* FEATURES DESCRIPTION ! Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K
|
Original
|
PDF
|
WEDPY256K72V-XBX
256Kx72
WEDPY256K72V-XBX
CS22
dq35j
fast sram 100mhz
CS11
CS21
DQ9-17
|
K7N327245M
Abstract: K7N327249M
Text: Preliminary 512Kx72 Pipelined NtRAMTM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25
|
Original
|
PDF
|
512Kx72
K7N327245M
512Kx72-Bit
K7N327249M
11x19
K7N327245M
|
dq35j
Abstract: CS11 CS21 CS22 WEDPY256K72V-XBX
Text: White Electronic Designs WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM DESCRIPTION FEATURES The WEDPY256K72V-XBX employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs into a single
|
Original
|
PDF
|
WEDPY256K72V-XBX
256Kx72
WEDPY256K72V-XBX
dq35j
CS11
CS21
CS22
|
Untitled
Abstract: No abstract text available
Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. April. 21. 2001 Preliminary 0.1 1. Add JTAG Scan Order May. 10. 2001 Preliminary Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the
|
Original
|
PDF
|
K7N167245A
256Kx72-Bit
256Kx72
11x19
00x10
|
Untitled
Abstract: No abstract text available
Text: WEDPZ512K72S-XBX 512K x 72 Synchronous Pipeline Burst ZBL SRAM *PRELIMINARY FEATURES DESCRIPTION ! Fast clock speed: 150, 133, and 100MHz The WEDC SyncBurst - SRAM employs high-speed, lowpower CMOS design that is fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate
|
Original
|
PDF
|
WEDPZ512K72S-XBX
100MHz
1Mx72.
|
Untitled
Abstract: No abstract text available
Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167249A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. April. 21. 2001 Preliminary 0.1 1. Add JTAG Scan Order May. 10. 2001 Preliminary Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the
|
Original
|
PDF
|
K7N167249A
256Kx72-Bit
256Kx72
11x19
00x10
|
K7N167249A
Abstract: No abstract text available
Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167249A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb April. 21. 2001 May. 10. 2001
|
Original
|
PDF
|
256Kx72
K7N167249A
256Kx72-Bit
11x19
00x10
00x18
K7N167249A
|
dq35j
Abstract: CS11 CS21 CS22 WEDPY256K72V-XBX
Text: White Electronic Designs WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM DESCRIPTION FEATURES The WEDPY256K72V-XBX employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs into a single
|
Original
|
PDF
|
WEDPY256K72V-XBX
256Kx72
WEDPY256K72V-XBX
dq35j
CS11
CS21
CS22
|
cs113
Abstract: WEDPZ512K72S-XBX CS10 CS11 CS20 CS21
Text: White Electronic Designs WEDPZ512K72S-XBX PRELIMINARY* 512K x 72 SYNCHRONOUS PIPELINE BURST ZBL SRAM FEATURES Fast clock speed: 150, 133, and 100MHz Fast access times: 3.8ns, 4.2ns, and 5.0ns Fast OE# access times: 3.8ns, 4.2ns, and 5.0ns High performance 3-1-1-1 access rate
|
Original
|
PDF
|
WEDPZ512K72S-XBX
100MHz
cs113
WEDPZ512K72S-XBX
CS10
CS11
CS20
CS21
|
Untitled
Abstract: No abstract text available
Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs
|
Original
|
PDF
|
WEDPY256K72V-XBX
256Kx72
WEDPY256K72V-XBX
|
Untitled
Abstract: No abstract text available
Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs
|
Original
|
PDF
|
WEDPY256K72V-XBX
256Kx72
WEDPY256K72V-XBX
|
|
av339
Abstract: Bf b9 IS61NVVP51236-200B IS61NVVP25672 IS61NVVP25672-200B IS61NVVP25672-250B IS61NVVP51236
Text: IS61NVVP25672 IS61NVVP51236 ISSI 256K x 72 and 512K x 36, 18Mb PIPELINE 'NO WAIT' STATE BUS SRAM ADVANCE INFORMATION JULY 2002 FEATURES DESCRIPTION • 100 percent bus utilization The 16 Meg 'NVVP' product family feature high-speed, low-power synchronous static RAMs designed to provide
|
Original
|
PDF
|
IS61NVVP25672
IS61NVVP51236
256Kx72
IS61NVVP25672-250B
IS61NVVP25672-250BI
IS61NVVP25672-200B
IS61NVVP25672-200BI
av339
Bf b9
IS61NVVP51236-200B
IS61NVVP25672
IS61NVVP25672-200B
IS61NVVP25672-250B
IS61NVVP51236
|
Untitled
Abstract: No abstract text available
Text: W2Z512K72SJ White Electronic Designs 36Mb, 512K x 72 Synchronous Pipeline Burst NBL SRAM Advanced* FEATURES DESCRIPTION n n n n n n n The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDCs 72Mb
|
Original
|
PDF
|
150MHz
W2Z512K72SJ
209-bump
W2Z512K72SJ35ES
W2Z512K72SJ38ES
W2Z512K72SJ28BC
W2Z512K72SJ30BC
W2Z512K72SJ35BC
W2Z512K72SJ38BC
W2Z512K72SJ30BI
|
W2Z1M72SJ
Abstract: No abstract text available
Text: W2Z1M72SJ 72Mb, 1Mx72 Synchronous Pipeline Burst NBL SRAM Preliminary* FEATURES DESCRIPTION n n n n n n n The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDCs 72Mb SyncBurst SRAMs integrate two 1Mx36 SRAMs into a
|
Original
|
PDF
|
W2Z1M72SJ
1Mx72
1Mx36
W2Z1M72SJ35ES
W2Z1M72SJ38ES
W2Z1M72SJ28BC
W2Z1M72SJ30BC
W2Z1M72SJ35BC
W2Z1M72SJ38BC
W2Z1M72SJ
|
Untitled
Abstract: No abstract text available
Text: W2Z1M72SJ White Electronic Designs 72Mb, 1M x 72 Synchronous Pipeline Burst NBL SRAM Advanced* FEATURES DESCRIPTION n n n n n n n The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDCs 72Mb
|
Original
|
PDF
|
150MHz
W2Z1M72SJ
209-bump
W2Z1M72SJ35ES
W2Z1M72SJ38ES
W2Z1M72SJ28BC
W2Z1M72SJ30BC
W2Z1M72SJ35BC
W2Z1M72SJ38BC
W2Z1M72SJ30BI
|
W2Z512K72SJ
Abstract: No abstract text available
Text: W2Z512K72SJ 36Mb, 512Kx72 Synchronous Pipeline Burst NBL SRAM Preliminary* FEATURES DESCRIPTION n Fast clock speed: 225, 200, 166 and 150MHz The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDCs 72Mb
|
Original
|
PDF
|
W2Z512K72SJ
512Kx72
150MHz
512Kx36
W2Z512K72SJ35ES
W2Z512K72SJ38ES
W2Z512K72SJ28BC
W2Z512K72SJ30BC
W2Z512K72SJ35BC
W2Z512K72SJ
|
Untitled
Abstract: No abstract text available
Text: Preliminary 512Kx72 Pipelined NtRAM TM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 0.1 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25
|
Original
|
PDF
|
K7N327245M
512Kx72-Bit
512Kx72
K7N327249M
K7N327245M
11x19
00x10
|
K7N167245A
Abstract: K7N167249A
Text: 256Kx72 Pipelined NtRAM TM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 0.1 0.2 0.3 1. Initial document. 1. Add JTAG Scan Order 1. Update DC characteristics icc,isb 1. Speed bin merge. From K7N167249A to K7N167245A.
|
Original
|
PDF
|
256Kx72
K7N167245A
256Kx72-Bit
K7N167249A
K7N167245A.
11x19
K7N167245A
|
NtRAM
Abstract: K7N327245M K7N327249M
Text: Preliminary 512Kx72 Pipelined NtRAM TM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Advance 0.1 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change.
|
Original
|
PDF
|
512Kx72
K7N327245M
512Kx72-Bit
K7N327249M
11x19
NtRAM
K7N327245M
|
Untitled
Abstract: No abstract text available
Text: ADVANCE U II^ C a n iM ni — 1 MT3LST3264 P , MT5LST6464(P) 32K, 64K x 64 SYNCHRONOUS SRAM MODULE 32K, 64K x 64 SRAM with TAG RAM 256KB/512KB, 3.3V, FLOW-THROUGH OR PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE MODULES FEATURES PIN ASSIGNMENT (Front View)
|
OCR Scan
|
PDF
|
MT3LST3264
MT5LST6464
160-lead,
82430FX
256KB/512KB,
160-PIN
|
Untitled
Abstract: No abstract text available
Text: . TOSHIBA 11\ I I TC55V1325FF-8, TC55V1325FF -10, TC55V1325FF -12 TECHNICAL DATA SILICON G A TE CMOS TENTATIVE 32,768 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V1325FF is a 1,048,576 bit synchronous pipelined burst SRAM that is organized as 32,768
|
OCR Scan
|
PDF
|
TC55V1325FF-8,
TC55V1325FF
32KX32
TC55V1325FFâ
002b117
TC55V1325FF-10.
|