diode in58
Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
Text: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors
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unitB-FLK50/0
VIP-CAB-FLK50/0
VIP-CAB-FLK50/FR/OE/0
diode in58
OMRON POWER RELAY MP2
DMT 98 ATEX G 001
honeywell dcs manual
Yokogawa Transducer
ABB inverter motor fault code
pdt 908
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C02S
Abstract: c28s
Text: 8 7 4 5 6 1 2 3 REVISIONS PART NUMBER CODING P _ C _ _ S_ _N REV. ECO. NO DESCRIPTION DATE BY A 861 INITIAL RELEASE 12/14/2005 HT B 1143 ADD ALL TERMINATION TYPES 9/14/2006 MV F F TERMINATION TYPE TERMINATION TYPE NUMBER OF POSITIONS PER ROW HEAD DIMENSION
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C10640
Drawings\C10640,
C02S
c28s
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ADI1364
Abstract: No abstract text available
Text: — d! MOTOROLA - % Order this data sheet by VNIOLM/D SEMICONDUCTOR TECHNICAL DATA a Advance v~loLM /formation Small-Signal L Field Effect . . . are designed for high voltage, high speed switching applications such as line drivers, relay drivers. CMOS logic, microprocessor or TTL-to-high voltage inlterface and
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MK145BP,
ADI1364
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C02S
Abstract: c28s c14s C04S C33S
Text: 8 7 4 5 6 1 2 3 P _ C _ _ S_ _N REVISIONS TERMINATION TYPE F NUMBER OF POSITIONS PER ROW TERMINATION CODE BA BB BC BD BE BF BG LEAD FREE GA GB GC GD D DA .140 3.56 B A .050 1.27 A B .140 3.56 HEAD DIMENSION .100 2.54 A .100 2.54 TYP. P _C _ _S _ _ N FITS RIGHT ANGLE BEND
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C10907
Drawings\C10907,
C02S
c28s
c14s
C04S
C33S
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TRACTION MOTOR GE 763
Abstract: TRACTION MOTOR GE 764 SA01-FE-3092-3 FLOW ELEMENT PDE2669TCUK 3EV290V20 VGd15 parker Bus Bar torque value table for metric bolts
Text: aerospace climate control electromechanical filtration fluid & gas handling hydraulics pneumatics process control sealing & shielding Parker Pneumatic A complete range of pneumatic system components Catalogue PDE2600PNUK March 2014 PDE2600PNUK Parker Pneumatic
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PDE2600PNUK
application987
PDE2600PNUK
TRACTION MOTOR GE 763
TRACTION MOTOR GE 764
SA01-FE-3092-3 FLOW ELEMENT
PDE2669TCUK
3EV290V20
VGd15
parker
Bus Bar torque value table for metric bolts
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Untitled
Abstract: No abstract text available
Text: t InNET TECH N O LO G IES T0466S Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (TD+)—(TD—) : (TX +)-C TX -) 1 : 1 ± 3% (RD +)—(RD—) : (RX+)—(RX—) 1 : 1 ± 3% INDUCTANCE: (TD+)—(TD—) 350uH MIN. O 0.1V, 100KHz,
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10OKHz
100MHz
30MHz
60MHz
80MHz
100MHz
--18dB
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Untitled
Abstract: No abstract text available
Text: Æ iitron 3 3 0 1 E L E C T R O N IC S W A Y . TEL: 407 848-4311 PRODUCT DEVICES.INC. W E S T P A LM B E A C H , F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS PET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1 t . ( 1 )
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300iiS,
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PHP36
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,
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PHP36N06E
T0220AB
PHP36
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ufnf320
Abstract: No abstract text available
Text: POWER MOSFET TRANSISTORS 400 Volt, 1.8 O hm FEATURES UFNF322 UFNF323 DESCRIPTION • Fast Switching • Low Drive Current The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.
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UFNF322
UFNF323
Par40
UFNF320
UFNF321
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bu 517
Abstract: NDS352P
Text: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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NDS352P
b50113D
003T74G
bSD113D
bSD113D
317H2
bu 517
NDS352P
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MPT100
Abstract: No abstract text available
Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &
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Untitled
Abstract: No abstract text available
Text: t InNET TECHNOLOGIES T0468S Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (TXIN+)—(CTIN)—(TXIN—) : (TXO+)-(CTO)-CTXO-) 1.25CT : 1CT ± 3% (RXO+)—(RXO—) : (RXIN+)—(RXIN—) 1 : 1 ± 3% R X 1+<D_i^rH|if— INDUCTANCE:
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30KHz
125MHz
10OKHz
10MHz
30MHz
60MHz
80MHz
T0468S
350uH
100KHz,
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BUK456
Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
Text: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
D0b41Db
BUK456-60A/B
T0220AB
BUK456
7110fi2b
DDb411D
BUK456-80A/B
BUK456-60A
BUK456-60B
BUK456-80A
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74AC05
Abstract: 74AC05SC AC05 M14A
Text: A I R C H I L D Revised D ecem ber 1999 S E M I C O N D U C T O R TM 74AC05 Hex Inverter with Open Drain Outputs General Description Features The A C 05 contains six inverters. • O utputs sink 24 mA ■ O pen drain fo r w ired NO R function ■ R adiation tolerant FACT process
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74AC05
74AC05SC
14-Lead
MS-012,
74AC05
AC05
M14A
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vectron C0-257B27
Abstract: vectron co-257 CO-257 CO-566 co257 vectron 257 C0-257f CO-08 C0-253B57 C0-257B57
Text: TCXOs to 140 MHz Model CO-257 uses surface mount construction on a printed circuit board housed in a solder sealed FEATURES: • metal can. This model includes discrete thermistors Miniature Highperformance Series and resistors in the temperature compensation
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CO-257
CO-557
CO-08.
CO-511
1390ij0,
vectron C0-257B27
vectron co-257
CO-566
co257
vectron 257
C0-257f
CO-08
C0-253B57
C0-257B57
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Untitled
Abstract: No abstract text available
Text: HE D I 4Ö 554 5 2 ÛQQflSS2 1 | INTERNATIONAL Data Sheet No. PD-9.324N RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF820 IRFSS1 IRFS22 IRF823 N-CHANNEL 500 Volt, 3.0 Ohm HEXFET TO-220AB Plastic Package
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IRF820
IRFS22
IRF823
O-220AB
C-307
IRF820,
IRF821,
IRF822,
IRF823
C-308
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Untitled
Abstract: No abstract text available
Text: Back to FETs IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S
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IRFY240
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Untitled
Abstract: No abstract text available
Text: Back to FETs iZiA Q T NSG2649 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S
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NSG2649
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BUK637-500B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL fc.SE D B 7110fl2fc, DDfci43Dfci OMR • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode
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711002b
D0b43Db
BUK637-500B
BUK637-500B
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Untitled
Abstract: No abstract text available
Text: CATALOG MI CRO SWI T CH 2EX1 S W IT C H -E N C L O S E D » !iV.- CK Of MlOHdHtllVHOKTWÎll HGULTOR CQWHT j j j j j j j L IS T IN G FEO. MF R. CODE 91929 MTS. HOLE FOR .280 DIA. FLAT HEAD SCREW.- 4 HOLE FOR *10 FLAT SCREW. 6.0 - ± .0 1 0 .2 6 5 -
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k554
Abstract: kiv 499 BUK554-200A BUK554-200B
Text: PHILIPS INTERNATIONAL bSE D m 7110fl2h D0b423b TTS « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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BUK554-200A/B
-T0220AB
ID/100
k554
kiv 499
BUK554-200A
BUK554-200B
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B4t diode surface mount
Abstract: C05S 702 TRANSISTOR sot-23 S-108 NDS331N supersot-3
Text: J u ly 1 9 9 6 N ational < ß Semiconductor" NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode po w e r fie ld effect tran sisto rs are produced using Nationals proprietary, high cell density, DMOS
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NDS331N
bS0113G
B4t diode surface mount
C05S
702 TRANSISTOR sot-23
S-108
NDS331N
supersot-3
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Untitled
Abstract: No abstract text available
Text: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 FOUR UNCOMMITTED POWER MOSFETS IN ISOLATED LOW PROFILE PLASTIC PACKAGE Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package FEATURES • • • • • • Isolated High Density Package High Current
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OM6223SP2
OM6224SP2
OM6225SP2
OM6226SP2
energ025
300/isec,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC M O S FIELD EFFECT TRANSISTOR 2SJ199 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ199, P-channel vertical ty p e MOS FE T, is a sw itching device w h ich can be driven d ire c tly by th e o u tp u t o f ICs having a 5 V pow er source. As the M OS F E T has lo w on-state resistance and excellen t s w itc h
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2SJ199
2SJ199,
K1485
WS60-00
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