NE25139
Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
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NE25139
NE251
NE25139T1U74
24-Hour
NE25139
ne720b
transistor marking U72 ghz
NE25139-T1
NE25139U71
NE720
NE25139T1U74
NE25139T1U71
16E-13
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NE25339
Abstract: NE25339-T1 KDB00 uhf microwave fet
Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW CRSS: 0.02 pF TYP GPS 20 10 • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm
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NE25339
NE253
NE25339-T1
OT-143)
24-Hour
NE25339
NE25339-T1
KDB00
uhf microwave fet
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FET2
Abstract: 100E-6 10E-15 C12SAT
Text: NONLINEAR MODEL NE25339 SCHEMATIC see Page 2 UNITS FOR MODEL PARAMETERS Parameter Units time capacitance inductance resistance voltage current seconds farads henries ohms volts amps FET NONLINEAR MODEL PARAMETERS(1) Parameters FET1 FET2 Parameters FET1 FET2
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NE25339
C11TH
C11DELT
C12SAT
100e-6
78e-10
0e-12
0e-15
25e-12
1e-12
FET2
10E-15
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NEC Ga FET marking A
Abstract: NE25139T1U74 NE25139U NE25139T1U71
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz
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NE25139
Vi32S
90CIM
NE251
NE25139T1
NE25139U74
24-Hour
NEC Ga FET marking A
NE25139T1U74
NE25139U
NE25139T1U71
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J Fet marking 2 AW
Abstract: 10E-15
Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V gs = 1 V, Ids = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz
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OCR Scan
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PDF
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NE25339
NE253
NE25339
OT-143)
NE25339-T1
J Fet marking 2 AW
10E-15
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u-79
Abstract: NE25339
Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES • • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • Lgi = 1.0 Jim, Lg2 = 1.5 Jim, Wg = 800 Jim
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OCR Scan
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NE25339
NE253
MESF39U79
NE25339T1U79
24-Hour
u-79
NE25339
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U73-U74
Abstract: 14E-14
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz
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OCR Scan
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PDF
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NE25139
NE251
OT-143)
NE25139-T1
NE25139U71
NE25139T1U71
NE25139U72
NE25139T1U72
NE25139U73
U73-U74
14E-14
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