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    C308 Search Results

    C308 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C308 Coilcraft Inc Designer's Kit, Micro Springs, 5% tol, RoHS Visit Coilcraft Inc Buy
    C308-2 Coilcraft Inc Designer's Kit, Micro Springs, 2% tol, RoHS Visit Coilcraft Inc Buy
    MC308G Rochester Electronics LLC J-K Flip-Flop, 1-Func, Positive Edge Triggered, ECL, MBCY10 Visit Rochester Electronics LLC Buy
    10155550-C308KLF Amphenol Communications Solutions Minitek MicroSpaceXS™ 1.27mm Crimp-to-Wire Connector Platform, wire-to-board, Header Right angle, 8 position, Gold Visit Amphenol Communications Solutions
    10155500-C308KLF Amphenol Communications Solutions Minitek MicroSpaceXS™ 1.27mm Crimp-to-Wire Connector Platform, wire-to-board, Header Right angle, 8 Position, STG, Top Latch, Gold; C Coding

    (For product qualification latest status, please submit Product Enquiry)
    Visit Amphenol Communications Solutions
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    C308 Price and Stock

    KEMET Corporation CBR06C308B5GACAUTO

    CAP CER 0.3PF 50V C0G/NP0 0603
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    DigiKey CBR06C308B5GACAUTO Cut Tape 6,913 1
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    CBR06C308B5GACAUTO Digi-Reel 6,913 1
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    Newark CBR06C308B5GACAUTO Cut Tape 2,900 1
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    Avnet Abacus CBR06C308B5GACAUTO 25 Weeks 8,000
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    Eaton Bussmann C308F250MA-TR1

    3X8.4FA, CERAMIC FUSE, 250MA, TR
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    DigiKey C308F250MA-TR1 Cut Tape 4,931 1
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    C308F250MA-TR1 Digi-Reel 4,931 1
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    C308F250MA-TR1 Reel 4,000 1,000
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    TME C308F250MA-TR1 1,000
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    Sager C308F250MA-TR1 1,000
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    onsemi MOC3083M

    OPTOISOLATOR 4.17KV TRIAC 6DIP
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    DigiKey MOC3083M Tube 3,568 1
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    Avnet Americas MOC3083M Tube 2,898 15 Weeks 1
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    MOC3083M Bulk 16 Weeks, 2 Days 1
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    Newark MOC3083M Bulk 408 1
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    TME MOC3083M 1,495 1
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    Avnet Asia MOC3083M 15 Weeks 3,000
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    Avnet Silica MOC3083M 16 Weeks 1,000
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    Chip One Stop MOC3083M Tube 747
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    EBV Elektronik MOC3083M 17 Weeks 1,000
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    Master Electronics MOC3083M 2,000
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    New Advantage Corporation MOC3083M 40,400 1
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    Wuhan P&S MOC3083M 1,000 1
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    Eaton Bussmann C308F-V-63MA-TR1

    FUSE CERM 63MA 250VAC/VDC
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    DigiKey C308F-V-63MA-TR1 Cut Tape 2,027 1
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    C308F-V-63MA-TR1 Reel 1,500 1,500
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    Sager C308F-V-63MA-TR1 1,500
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    Hirose Electric Co Ltd DF12NC(3.0)-80DS-0.5V(51)

    CONN RCPT 80POS SMD GOLD
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    DigiKey DF12NC(3.0)-80DS-0.5V(51) Cut Tape 1,611 1
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    DF12NC(3.0)-80DS-0.5V(51) Digi-Reel 1,611 1
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    DF12NC(3.0)-80DS-0.5V(51) Reel 1,000 1,000
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    Avnet Americas DF12NC(3.0)-80DS-0.5V(51) Reel 26 Weeks 1,000
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    Avnet Abacus DF12NC(3.0)-80DS-0.5V(51) 14 Weeks 1,000
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    C308 Datasheets (88)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C308 Coilcraft C308 - Designer's Kit, Micro Springs, 5% tol, RoHS Original PDF
    C308 Coilcraft Designer's Kit, Micro Springs, 5% tol, RoHS Original PDF
    C30801 Unknown Shortform Electronic Component Datasheets Short Form PDF
    C30802 Unknown Shortform Electronic Component Datasheets Short Form PDF
    C30805 Unknown Shortform Electronic Component Datasheets Short Form PDF
    C30806 Unknown Shortform Electronic Component Datasheets Short Form PDF
    C30807 PerkinElmer Optoelectronics N-Type Silicon PIN Photodetectors Original PDF
    C30807 Unknown Shortform Electronic Component Datasheets Short Form PDF
    C30807 RCA Solid State Photodetectors Scan PDF
    C30807E PerkinElmer Optoelectronics si Pins Standard N-type 400 NM to 1100 NM Original PDF
    C30807EH Excelitas Technologies SI PIN, 1.0MM, TO-18, N-TYPE PHO Original PDF
    C30808 PerkinElmer Optoelectronics N-Type Silicon PIN Photodetectors Original PDF
    C30808 Unknown Shortform Electronic Component Datasheets Short Form PDF
    C30808 RCA Solid State Photodetectors Scan PDF
    C30808A Unknown Shortform Electronic Component Datasheets Short Form PDF
    C30808E PerkinElmer Optoelectronics si Pins Standard N-type 400 NM to 1100 NM Original PDF
    C30808EH Excelitas Technologies SI PIN, 2.5MM, TO-5, N-TYPE PHOT Original PDF
    C30809 PerkinElmer Optoelectronics N-Type Silicon PIN Photodetectors Original PDF
    C30809 Unknown Shortform Electronic Component Datasheets Short Form PDF
    C30809 RCA Solid State Photodetectors Scan PDF

    C308 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C3088

    Abstract: ov6620 omnivision EVALUATION BOARD C3088 CMOS Camera OmniVision CMOS Camera Module OV6620 omnivision EVALUATION BOARD camera interface c3088 CCIR656 camera omnivision cmos OmniVision CMOS pcb
    Text: C3088 1/4” Color Camera Module With Digital Output General Description The C3088 is a 1/4” color camera module with digital output. It uses OmniVision’s CMOS image sensor OV6620. Combining CMOS technology together with an easy to use digital interface makes C3088 a low cost solution for higher quality video


    Original
    C3088 C3088 OV6620. OV511+ ov6620 omnivision EVALUATION BOARD C3088 CMOS Camera OmniVision CMOS Camera Module OV6620 omnivision EVALUATION BOARD camera interface c3088 CCIR656 camera omnivision cmos OmniVision CMOS pcb PDF

    BTPA92N3

    Abstract: SOT-23 2D transistor marking 2d ghz
    Text: Spec. No. : C308N3-H Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTPA92N3 Description • High breakdown voltage. BVCEO=-300V • Low collector output capacitance. • Ideal for chroma circuit.


    Original
    C308N3-H BTPA92N3 -300V) OT-23 UL94V-0 BTPA92N3 SOT-23 2D transistor marking 2d ghz PDF

    Transistor TO-92 A92

    Abstract: 1902 transistor BTPA92A3
    Text: Spec. No. : C308A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTPA92A3 Description • High breakdown voltage. BVCEO=-300V • Low collector output capacitance. • Ideal for chroma circuit.


    Original
    C308A3 BTPA92A3 -300V) UL94V-0 Transistor TO-92 A92 1902 transistor BTPA92A3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3x8.4mm Fast-Acting, Ceramic Tube Fuses C308F Series Dimensions - mm Drawing Not to Scale Description • • • • • Fast-acting, high breaking capacity of 4000 amps 3x8.4mm physical size Ceramic tube, silver-plated brass endcap construction RoHS compliant


    Original
    C308F EN60079-11) E19180 250mA C308F-160mA-TR) C308F-50mA C308F-80right BU-SB12170 PDF

    133/ATMEL 230 24C04

    Abstract: No abstract text available
    Text: A R253 10K C308 10uF/6.3V 10K 5 DD30 BAV99 R259 +3.3VD R335 10K +3.3VD HD-VSW0 1 B COVER1 1 2 3 4 5 COVER1 47n 47n 47R C57 47R C58 3906 Q41 1 7 RGB0_RIN- RGB0_GIN- R252 47K C331 R249 C307 1n 100R Jupiter-RST 10uF/6.3V RESET ON_PANEL HOTPLUG 47n R126 R124 RGB0_BIN-


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    10uF/6 BAV99 100p100p C314C315 133/ATMEL 230 24C04 PDF

    m3x8

    Abstract: G6620400201 MC308 G6135013070 400LFM C091 G6620090204 SZ56 G6610120402 75A13
    Text: HEAT SINKS FULL BRICK HEATSINK Horizontal Fins P/N: G6620090204 Model No. :M-B012 H E AT SI N K All Dimensions In mm HALF BRICK CASE HEATSINK All Dimensions In mm Vertical Fins P/N: G6620400201 Model No. :M-C308 Horizontal Fins P/N: G6610120402 Model No. :M-C091


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    G6620090204 M-B012 G6620400201 M-C308 G6610120402 M-C091 G6610130402 M-C092 SR60x115 G6135013070) m3x8 G6620400201 MC308 G6135013070 400LFM C091 G6620090204 SZ56 G6610120402 75A13 PDF

    Untitled

    Abstract: No abstract text available
    Text: C3082L REV A Product Description CEP7 0.83:1 ADSL DMT CO Line Transformer Meets requirements of IEC60950 for basic insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code A COEV C3082L XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface


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    C3082L IEC60950 C3082L 016REF 100mVAC, 10KHz, 100mVAC. 100kHz, PDF

    transistor marking 2d ghz

    Abstract: BTA1721N3 SOT-23 2D
    Text: CYStech Electronics Corp. Spec. No. : C308N3 Issued Date : 2002.06.11 Revised Date : 2005.06.01 Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTA1721N3 Description • High breakdown voltage. • Low collector output capacitance. • Ideal for chroma circuit.


    Original
    C308N3 BTA1721N3 OT-23 UL94V-0 transistor marking 2d ghz BTA1721N3 SOT-23 2D PDF

    MC091

    Abstract: No abstract text available
    Text: HEAT SINKS FULL BRICK HEATSINK Horizontal Fins P/N: G6620090204 Model No. :M-B012 HEAT SIN K All Dimensions In mm HALF BRICK CASE HEATSINK All Dimensions In mm Vertical Fins P/N: G6620400201 Model No. :M-C308 Horizontal Fins P/N: G6610120402 Model No. :M-C091


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    G6620090204 M-B012 G6620400201 M-C308 G6610120402 M-C091 G6610130402 M-C092 SR60x115 G6135013070) MC091 PDF

    thermal fuses color coding

    Abstract: No abstract text available
    Text: 3x8.4mm Fast-Acting, Ceramic Tube Fuses for Barrier Applications C308F Series Dimensions - mm Drawing Not to Scale Recommended Pad Layout Description A compact 3x8.4mm size provides a space-saving alternative to conventional fuse solutions with high interrupting rating for primary and secondary circuit


    Original
    C308F 250mA. EN60079-11) E19180 BU-SB131179 thermal fuses color coding PDF

    C30807

    Abstract: C30810 C30822 C30822 photodiode C3081 k2645 C30808 C30809 C30831 C30839
    Text: N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description Features This family of N-type silicon p-i-n • Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2 photodiodes is designed for use in a wide


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    C30807, C30808, C30809, C30810, C30822, C30831 C30807 C30809 C30808 C30810 C30822 C30822 photodiode C3081 k2645 C30808 C30809 C30831 C30839 PDF

    C30817E

    Abstract: datasheet apd 1550
    Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,


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    C30659 12-lead C30817EH, C30902EH, C30954EH, C30956EH, C30645EH C30662EH, C30950 C30817E datasheet apd 1550 PDF

    ca3290

    Abstract: CA3290A CA3290AE bipolar zener diodes 1N914 2N2102 C30809 CA3290E
    Text: CA3290, CA3290A Data Sheet September 1998 BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output • MOSFET Input Stage - Very High Input Impedance ZIN . . . . . . . . 1.7TΩ (Typ) - Very Low Input Current at V+ = 5V . . . . . . . 3.5pA (Typ)


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    CA3290, CA3290A CA3290/A CA3290A CA3290 CA3290AE bipolar zener diodes 1N914 2N2102 C30809 CA3290E PDF

    Untitled

    Abstract: No abstract text available
    Text: E 6 & 6/CANADA/OP TOELEK R C /1 3D30blD DDD01DS 33T « C A N A 10 T - V /- Photodiode C30817 DATA SH EET Optics Silicon Avalan che Photodiode for G e n eral-Purp ose Applications • High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm


    OCR Scan
    3D30blD DDD01DS C30817 C30817 PDF

    C30872

    Abstract: RCA 410 RCA H 410 c30872 application notes ir photodiode 0351 S546 photodiode avalanche u 5601 TO8 package
    Text: E G & G/CANADA/OPTOELEK I t C i l IO D • 3G30L1G OGDD11S S6ñ « C A N A Electro Optics Photodiode C30872 DATA SHEET Large Area Silicon Avalanche Photodiode for General-Purpose Applications IHigh Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm


    OCR Scan
    3G30L1G OGDD11S C30872 C30872 ED-0033/10/88 RCA 410 RCA H 410 c30872 application notes ir photodiode 0351 S546 photodiode avalanche u 5601 TO8 package PDF

    C30844

    Abstract: C30845 rca 632 quadrant photodiode rca C30846 quadrant photodiode 303dbl0 92LS-S56S "S56S" PIN quadrant detector
    Text: RC/1 E G & G/CA N A D A / O P T OELEK 3G30fc.lD ODOOIDI Tfl4 « C A N A IO Electro Photodiode C30843 Optics C30844, C30845, C30846 DATA SHEET Quadrant N-Type Silicon p-i-n Photodetectors • Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2 ■ Low Operating \foltage —


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    C30843 C30844, C30845, C30846 25-mm C30843, C30845 C30844 rca 632 quadrant photodiode rca C30846 quadrant photodiode 303dbl0 92LS-S56S "S56S" PIN quadrant detector PDF

    tic 1060

    Abstract: rca 923 C30895 5252 F led rca 514 5252 F 5252 S RCA 411
    Text: E G & G/CANADA/OPTOELEK BDBDbl D O O O O i n ID <123 H C A N A T-W-Si Photodiode R G i l Optics C30895 D A TA S H E ET Silicon Avalanche Photodiode Optim ized fo r High Responsivity and V e ry Lo w Noise at 1060 Nanom eters • Noise Equivalent Power NEP a t 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.


    OCR Scan
    C30895 Range--46Â C30895 ED-0028/10/88 tic 1060 rca 923 5252 F led rca 514 5252 F 5252 S RCA 411 PDF

    quadrant photodiode CD

    Abstract: C30843 quadrant photodiode rca RCA H 410 quadrant detector large area quadrant photodiode RCA H 940 LM 8105 C30845 740417
    Text: C I A INC/ t ELECTRO C I 7M 84b7S 000010=1 b Photodiode C30843 G30844, C30845, C30846 DATASHEET ID E OPTICS J I Quadrant 5 • Silicon p-i-n Photodetectors ■ B road R ange of P hotosensitive S uface A reas — 5 mm* to 100 m m 2 ■ Low O perating Voltage—VR - . 4 5 V


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    C30843 C30846 25-mm C30843, C30844, C30845 quadrant photodiode CD C30843 quadrant photodiode rca RCA H 410 quadrant detector large area quadrant photodiode RCA H 940 LM 8105 740417 PDF

    photodioda

    Abstract: N10-13 laser rca rca 210 C30895
    Text: 1GE D • I 74fi4b75 D D O D i n A INC/ ELECTRO OPTICS VICil H I Photodiode C30895 DATASHEET Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Pow er NEP a t 1060 n m — 7.5 x 1 0 14 W /Hz1'2 max.


    OCR Scan
    4fi4b75 C30895 C30895 ED-0028/10/88 photodioda N10-13 laser rca rca 210 PDF

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK ID î • 3ü30blü G O O O i n ItC ilElectro 123 M C A N A T-W S i Photodiode C30895 DATA SHEET Optics Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Power NEP at 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.


    OCR Scan
    C30895 C30895 ED-0028/10/88 PDF

    RCA c30808

    Abstract: TAG60 3G30 L568 C30822 photodiode C30807 C30809 C30810 d28j 35XL
    Text: E G & G/CANADA/OPTOELEK 3G30blQ ID □□□□!□! 7T3 ICANA Photodiode I t C J C30807, C30808, C30809 C30810, C30822, C30831 Optics E le c ,r o l DATA SHEET ' V f'S T 3 N-Type Silicon p-i-n Photodetectors Broad Range of Photo­ sensitive Surface Areas 0.2 mm2 to 100 mm2


    OCR Scan
    3G30blQ C30807, C30808, C30809 C30810, C30822, C30831 l-571 C30810 C30807 RCA c30808 TAG60 3G30 L568 C30822 photodiode C30810 d28j 35XL PDF

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK I t C i l • IO Optics 303DtilD DDOOlQ'ì TÔH « C A N A “p - Y / - * ' 3 Photodiode C30843 C30844, C30845, C30846 DATA S H EET Quadrant N-Type Silicon p-i-n Photodetectors ■ Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2


    OCR Scan
    303DtilD C30843 C30844, C30845, C30846 coverin68 C30845 PDF

    Untitled

    Abstract: No abstract text available
    Text: itesi E G & G/ CANADA/ OPTOELEK IO D • 3G3DblO OGGG11S Electro Optics 266 «CANA Photodiode C30872 DATA SHEET Large Area Silicon Avalanche Photodiode for General-Purpose Applications IHigh Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm


    OCR Scan
    OGGG11S C30872 C30872 ED-0033/10/88 PDF

    C30817

    Abstract: RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4
    Text: E 6 & 6/CANADA/OPTOELEK 10 » yy- r 3D30fc>10 ÜÜ001D5 33^ B K A N A WM flTB ÆM Electro Photodiode C30817 DATA SHEET • mw#loptics Silicon Avalanche Photodiode for General-Purpose Applications ■ High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm


    OCR Scan
    3D30fc 001Q5 C30817 Range--40Â C30817 ED-0030/10/88 RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4 PDF