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    Skyworks Solutions Inc 530CC21M1680DG

    Standard Clock Oscillators Differential/single-ended; single frequency XO; OE pin 2 (pin 1 for CMOS); 10-1417 MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 530CC21M1680DG
    • 1 $15.44
    • 10 $14.47
    • 100 $13.5
    • 1000 $13.23
    • 10000 $13.23
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    Skyworks Solutions Inc 530CC21M1680DGR

    Standard Clock Oscillators Differential/single-ended; single frequency XO; OE pin 2 (pin 1 for CMOS); 10-1417 MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 530CC21M1680DGR
    • 1 -
    • 10 -
    • 100 -
    • 1000 $13.02
    • 10000 $13.02
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    CC 1M16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WF2M16-XXX5

    Abstract: No abstract text available
    Text: WF2M16-XXX5 HI-RELIABILITY PRODUCT 2Mx16 FLASH MODULE, SMD 5962-97610 PRELIMINARY* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP Package 207 .


    Original     		PDF WF2M16-XXX5 2Mx16 150ns 64KBytes 64KByte 01HXX 120ns WF2M16-XXX5

    cc 1m16

    Abstract: WF4M16-XDTX5
    Text: WF4M16-XDTX5 HI-RELIABILITY PRODUCT 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Time of 90, 120, 150ns ■ Packaging: • 56 Lead, Hermetic Ceramic, 0.520" CSOP Package 213 .


    Original     		PDF WF4M16-XDTX5 2x2Mx16 150ns 64KBytes cc 1m16 WF4M16-XDTX5

    Untitled

    Abstract: No abstract text available
    Text: WF2M16-XXX5 HI-RELIABILITY PRODUCT 2Mx16 FLASH MODULE, SMD 5962-97610 pending PRELIMINARY* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).


    Original     		PDF WF2M16-XXX5 2Mx16 150ns 64KBytes 2Mx16; 64KByte 64KByte 120ns

    csop

    Abstract: WF2M16-XXX5
    Text: WF2M16-XXX5 HI-RELIABILITY PRODUCT 2Mx16 FLASH MODULE, SMD 5962-97610 pending PRELIMINARY* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).


    Original     		PDF WF2M16-XXX5 2Mx16 150ns 64KBytes 64KByte 01HXX* 120ns csop WF2M16-XXX5

    Untitled

    Abstract: No abstract text available
    Text: WF4M16-XDTX5 HI-RELIABILITY PRODUCT 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Time of 90, 120, 150ns ■ Packaging: • 56 Lead, Hermetic Ceramic, 0.520" CSOP Package 213 .


    Original     		PDF WF4M16-XDTX5 2x2Mx16 150ns 64KBytes 2Mx16;

    1m16e

    Abstract: No abstract text available
    Text: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16E0-60)


    Original     		PDF AS4C1M16F5 AS4C1M16E0-60) 42-pin 44/50-pin AS4C1M16F5 AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-50TC 1m16e

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON I TECHNOLOGY, 1 6 M l n b XAM INC. FEATURES 50-Pin TSOP V cc DQ0 DQ1 V ssQ DQ2 DQ3 V ccQ DQ4 DQ5 V ssQ DQ6 DQ7 V ccQ DQ M L W E# C AS# RAS# C S# BA A10 A0 A1 A2 A3 V cc MARKING 1M16 • Plastic Package - OCPL 50-pin TSOP 400 mil TG • Timing


    OCR Scan     		PDF 50-Pin MT48LC1M16A1TG-8A

    Untitled

    Abstract: No abstract text available
    Text: WF4M16-XDTX5 H i-R£Ü A SIÜ TY PRODUCT 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES D ata P o llin g and T o g g le B it fe a tu re fo r d e te c tio n of prog ram • A c c ess T im e of 9 0 , 1 2 0 , 1 50ns ■ • ■ or era se cycle com p letio n . Packaging:


    OCR Scan     		PDF WF4M16-XDTX5 2x2Mx16

    T835

    Abstract: No abstract text available
    Text: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e


    OCR Scan     		PDF AS4C1M16E0 AS4LC1M16E0 16E0-60JC I6E0-60JC 42-pin 16E0-70JC IM16E0 T835

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ I l AS4C1M16E5 AS4LC1M16E5 A 5V/3V l M x l ó CMOS DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed ■Read-modify-write >TTL-compatible, three-state DQ >JEDEC standard package and pinout - 4 5 /5 0 /6 0 ns RA S access tim e


    OCR Scan     		PDF AS4C1M16E5 AS4LC1M16E5 42-pin /50-p 6E5-60) AS4C1M16ion. AS4LC1M16E5 44/50-pin 16E5-45TCAS4LC1M

    Untitled

    Abstract: No abstract text available
    Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0


    OCR Scan     		PDF AS4LC1M16EÃ 42-pin 4C1M16EO-SO)

    RR 113001

    Abstract: 1M16E5
    Text: Advance information •■ AS4VC1M16E5 A 2.5V lM x 16 CMOS lntelliwatt,v DRAM EDO Features 1 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh 1Read-modify-write


    OCR Scan     		PDF AS4VC1M16E5 42-pin 44/50-pin AS4VC1M16E5-100JC AS4VC1M16E5-100TC 1M16E5 RR 113001 1M16E5

    Untitled

    Abstract: No abstract text available
    Text: H igh Performance 1MX16 CMOS DRAM •■ II AS4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0


    OCR Scan     		PDF 1MX16 AS4C1M16E0 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) AS4LC1M16E0 AS4LC1M16EO-70JC 42-pm 1M16E0

    AS4C1M16F5

    Abstract: No abstract text available
    Text: Preliminary information •■ AS4C1M16F5 1 5V lM x 16 CM OS DRAM fast page mode Features • O rg an izatio n : 1 ,0 4 8 ,5 7 6 w o rd s • H ig h speed X • 1024 refresh cycles, 16 m s refresh in terv al 16 bits - K A S -only o r C A S-before-K A S r e f r e s h


    OCR Scan     		PDF AS4C1M16F5 AS4C1M16E0-60) 42-pin AS4C1M16F5-50JC AS4C1M16F5-60JC IM16E0 AS4C1M16F5

    MZP A 001 45 05

    Abstract: mzp A 001 49 16 mzp a 001 47 05 mzp a 001 45 16 mzp A 001 49 05 mzp A 001 49 motorola zener diode 1N4728 mzp 001 45 10 MZP4729
    Text: M O T O R C L A SC DIODES/OPTO 1 *»E D § k 3 b ? 2 SS MOTOROLA doaacna s I Order this data sheet by MPZ4728/D SEM IC O N D U C T O R T -Ü -/3 TECHNICAL DATA Designer's Data Sheet 1.0 W a tt S u rm e tic 30 S ilic o n Zener D io d e s . a complete series of 7,0 watt zener diodes with limits and operating characteristics


    OCR Scan     		PDF MPZ4728/D MZP4728 MZP4764 10ZS10 1M200ZS10 MZP A 001 45 05 mzp A 001 49 16 mzp a 001 47 05 mzp a 001 45 16 mzp A 001 49 05 mzp A 001 49 motorola zener diode 1N4728 mzp 001 45 10 MZP4729

    AS4C1M16ES

    Abstract: 4C1M16E5 LR 3441 1MX16 AS4C1M16E5 LMZ 9 4C1M16E5-60
    Text: H ig h P e r fo r m a n c e lM x 16 CM OS DRAM » II A S4C 1M 16E 5 I lM x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cydes, 16 ms refresh interval - RAS-only o r CAS-before-RAS refresh


    OCR Scan     		PDF AS4C1M16E5 1MX16 4C1M16E0-60) 42-pin 12S4C1M16E5 Capacitance15 42-pin AS4C1M16E5-60JC 1M16E0 AS4C1M16ES 4C1M16E5 LR 3441 AS4C1M16E5 LMZ 9 4C1M16E5-60

    Untitled

    Abstract: No abstract text available
    Text: UNLESS OTHERWISE NOTED REV. AA DIMENSIONS ARE IN INCHES — N o OF POS X .0 5 0 + .100 [1 .2 7 ] [2 .5 4 ] ONE PLACE DECIMALS ± TWO PLACE DECIMALS ± —|(N o OF POS X .0 5 0 ) + [1 .2 7 ] .1 .01 TOLERANCES ARE: N o OF PO S ITIO NS - 0 5 THRU - 5 0 L JT


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTORCLA SC DIODE S/ OP TO 14E D § k3L72SS o o flo c n a s I _ Order this dita sheet by MPZ4728/D MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA Designer's Data Sheet 1.0 W att S u rm e tic 30 S ilic o n Zener D io d e s . . a complete series of 1,0 watt zener diodes with limits and operating characteristics


    OCR Scan     		PDF k3L72SS MPZ4728/D MZP4728 MZP4764 1M110Ztended. C643S4 MZP4728 1M110ZS10 1M200ZS10

    4C1M16

    Abstract: 1MX16 4LC1M16
    Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout


    OCR Scan     		PDF 1MX16 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) 6E0-50 4C1M16E0-60 6E0-70 AS4C1M16E0 4C1M16 4LC1M16

    MC6504

    Abstract: xn203 MC68040-25 led 7 doan MC68LC040 hall effect 44e MC68040RC25 ms8040 USPA AC M68040
    Text: ,VU X )4()l I M / A I ) C68040 Rc\ I MC68EC040V MICROPROCESSORS USER'S MANUAL Introduction Integer Unit M e m o ry M anagem ent Unit (Except M C 6 8 E C 0 4 0 & M C 6 8 E C 0 4 V ) Instruction and Data Caches Signal Description IEEE 1149.1 Test Access Port (JTAG)


    OCR Scan     		PDF X04miM/AI) MC68EC040V MC68EC040 MC68EC04V) MC68040) MC68040 MC68LC040 MC68EC040 MC68040V MC68EC040V MC6504 xn203 MC68040-25 led 7 doan hall effect 44e MC68040RC25 ms8040 USPA AC M68040

    13001 LZ

    Abstract: SR 13001 PA 13001
    Text: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh


    OCR Scan     		PDF AS4VC1M16E5 42-pin 44/50-pin AS4VC1M16E5-50JC AS4VC1M16E5-50TC AS4VC1M16E5-60JC AS4VC1M16E5-60TC 13001 LZ SR 13001 PA 13001

    B9535

    Abstract: 1M16
    Text: PRELIMINARY MT4LC1 M16H5 1 MEG x 16 BURST EDO DRAM BURST EDO DRAM 1 MEG x 16 FEATURES PIN ASSIGNMENT Top View • B urst order, interleave or linear, p ro gram m ed by executing W CBR cycle after initialization • Sin gle p o w er su p p ly : +3.3V ±5%


    OCR Scan     		PDF M16H5 024-cycle 44/50-Pin A7-A10 000xB B9535 1M16

    4LC1M16E5

    Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5
    Text: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh


    OCR Scan     		PDF AS4C1M16E5 AS4LC1M16E5 4C1M16E5-60) 4LC1M16E5-60) 42-pin 4C1M16E5) 44/50-pin 4LC1M16E5) AS4C1M16E5) AS4C1M16E5 4LC1M16E5 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A 4lc1m16e5-60 AS4LC1M16E5

    4lc1m16e5-6

    Abstract: No abstract text available
    Text: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al


    OCR Scan     		PDF 16E5-60) 4LC1M16E5-60) 42-pin AS4C1M16ES-50JC AS4C1M16E5-60JC AS4LC1M16E5-50TC -60TC 42-pin 1M16E0 4lc1m16e5-6