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    COLLECTOR CURRENT A 1 Search Results

    COLLECTOR CURRENT A 1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    COLLECTOR CURRENT A 1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD543

    Abstract: 543C BD543A BD543B BD543C BD544
    Text: SavantIC Semiconductor Product Specification BD543/A/B/C Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD544/A/B/C ·8 A continuous collector current ·10 A peak Collector current PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF BD543/A/B/C O-220C BD544/A/B/C BD543 BD543A BD543B BD543C BD543 543C BD543A BD543B BD543C BD544

    Untitled

    Abstract: No abstract text available
    Text: High-current gain Power Transistor 60V, 3A 2SD2318 Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC Collector power dissipation PC 3 A 4.5 A(Pulse) W W(TC=25°C) Tj 150 °C Tstg


    Original     		PDF 2SD2318 SC-63 R1010A

    PC895

    Abstract: pc865 E64380 PC875
    Text: PC865 Series PC865 Series High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler • Features ■ Applications 1. Low collector dark current ICEO : MAX. 10 µ A at VCE = 24V, Ta = 85˚C 2. High current transfer ratio


    Original     		PDF PC865 PC865 PC875 PC895 E64380 PC895 E64380 PC875

    2SD1251

    Abstract: 2SD1251A
    Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 2.0 0.8±0.1 TC=25˚C Ratings 2.54±0.3 5.08±0.5 Unit 1 V 80 Emitter to base voltage VEBO 8 V Peak collector current ICP 6 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C


    Original     		PDF 2SD1251, 2SD1251A 2SD1251 Fo102 2SD1251 2SD1251A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB0942, 2SB0942A Silicon PNP epitaxial planar type Unit: mm Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO −60 V 2SB0942 −60 VCEO 16.7±0.3 1 2 3 −5 V Peak collector current ICP −8 A Collector current


    Original     		PDF 2SB0942, 2SB0942A 2SD1267 2SD1267A 2SB0942 2SB0942A 2SB0942

    2SB0934

    Abstract: 2SB934 2SD1257 2SD1257A
    Text: Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0934 2SB934 V 100 Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C dissipation


    Original     		PDF 2SD1257, 2SD1257A 2SB0934 2SB934) 2SB0934 2SB934 2SD1257 2SD1257A

    2SD2139

    Abstract: No abstract text available
    Text: Power Transistors 2SD2139 Silicon NPN triple diffusion planar type Unit: mm 18.0±0.5 Solder Dip Symbol Rating Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 6 A Collector current


    Original     		PDF 2SD2139 2SD2139

    2SB0928

    Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
    Text: Power Transistors 2SB0928, 2SB0928A 2SB928, 2SB928A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 –150 VCEO V –180 Emitter to base voltage VEBO –6 V Peak collector current ICP –3 A Collector current IC –2 A Collector power TC=25°C


    Original     		PDF 2SB0928, 2SB0928A 2SB928, 2SB928A) 2SB0928 2SB0928 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A

    2SD965AL-AB3-R

    Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
    Text: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89


    Original     		PDF 2SD965/A 2SD965 2SD965A OT-89 2SD965L/2SD965AL 2SD965-AB3-R 2SD965L-AB3-R 2SD965A-AB3-R 2SD965AL-AB3-R OT-89 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965

    2SB1119

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1119 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 mW (Tamb=25℃) 1 2 3. EMITTER Collector current -1 A ICM: Collector current (Pulse)


    Original     		PDF OT-89 2SB1119 OT-89 -50mA -500mA, 2SB1119

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


    Original     		PDF 2SD965/A 2SD965 2SD965A 2SD965L/2SD965AL QW-R201-007

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


    Original     		PDF 2SD965/A 2SD965 2SD965A QW-R201-007

    2SD965

    Abstract: No abstract text available
    Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


    Original     		PDF 2SD965 2SD965 2SD965A O-252 2SD965A QW-R209-007

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SD2046 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Emitter to base voltage VEBO 7 V Collector current IC 1.5 A Collector peak current


    Original     		PDF 2SD2046 Hitachi DSA002756

    2SD965

    Abstract: No abstract text available
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


    Original     		PDF 2SD965/A 2SD965 2SD965A QW-R201-007 2SD965

    543C

    Abstract: BD543 BD543A BD543B BD543C
    Text: Inchange Semiconductor Product Specification BD543/A/B/C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD544/A/B/C ・8 A continuous collector current ・10 A peak Collector current PINNING PIN DESCRIPTION 1 Base


    Original     		PDF BD543/A/B/C O-220C BD544/A/B/C BD543 BD543A BD543B BD543C 543C BD543 BD543A BD543B BD543C

    sot 89 2sd965

    Abstract: 2SD965
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


    Original     		PDF 2SD965/A 2SD965 2SD965A OT-89 2SD965 2SD965A QW-R208-003 sot 89 2sd965

    BC161-16

    Abstract: Bc161 marking
    Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 80.0 V NO. BC161-16 Voltage, Collector to Emitter (VCE) 60.0 V TYPE PNP Voltage, Emitter to Base (VEBO) 5.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)


    Original     		PDF BC161-16 tp300 BC161-16 Bc161 marking

    TRANSISTOR BC140

    Abstract: BC140-16
    Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 60.0 V NO. BC140-16 Voltage, Collector to Emitter (VCE) 40.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 7.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)


    Original     		PDF BC140-16 tp300 TRANSISTOR BC140 BC140-16

    2SB1645

    Abstract: No abstract text available
    Text: Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit: mm 15.5±0.5 Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160 V Emitter to base voltage VEBO −5 V Peak collector current ICP −15 A Collector current IC


    Original     		PDF 2SB1645 2SB1645

    T1P110

    Abstract: T1P112 00104 TIP111 TIP112 TIP115 TIP116 TIP117
    Text: PANASONIC INDL/ELEK -CIO [□*132052 DDIOMBI a 12E D Darlington Silicon NPN Power Transistors TO-220 Package T-33 Absolute Maximum Ratings Ta=25°C Kern Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current


    OCR Scan     		PDF O-220 TIP112 TIP115, TIP116, TIP117 25mJcs T1P110 T1P112 00104 TIP111 TIP115 TIP116 TIP117

    2SC5110

    Abstract: No abstract text available
    Text: 2SC5110 TOSHIBA 2 S C 5 1 10 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation


    OCR Scan     		PDF 2SC5110 2SC5110

    Untitled

    Abstract: No abstract text available
    Text: KSD1944 NPN EPITAXIAL SILICON TRANSISTOR HIGH ¥ POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic V cbO Symbol 80 V Collector Emitter Voltage VcEO 60 V Emitter Base Voltage V ebo 8 V Collector Current lc 3 A Collector Current Tc= 2 5 1


    OCR Scan     		PDF KSD1944

    QM75DY-2HB

    Abstract: QM75DY-2H
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-2HB * lc Collector current. 75A Collector-emitter voltage.1000V * hFE DC current g a in . 750 * Insulated Type


    OCR Scan     		PDF QM75DY-2HB E80276 E80271 QM75DY-2HB QM75DY-2H