ibm rdram

Contextual Info: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Datasheet Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses

DA30F

Abstract: TFR 600M
Contextual Info: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses

GB4943-2001

Abstract: EPR-100-12
Contextual Info: ECU _ POWER SUPPLY Mounted Power Supply Series PFC Power Supply Series Din-Rail Power Supply Series Open-Frame Power Supply Series Industry-Specific Power Supply IN +15i ECU Electronics Industrial Co. Ltd was established in 1992, which was invested by NO. 38

da48

Abstract: uPD488448FB-C60-53-DQ1 uPD488448FF-C60-53-DQ1 uPD488448FF-C60-53-DQ2 uPD488448FF-C71-45-DQ1 uPD488448FF-C71-45-DQ2 uPD488448FF-C80-45-DQ1 uPD488448FF-C80-45-DQ2 DA63 DB33 circuit diagram
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. E 128 M-bit Direct Rambus DRAM EO Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

CLV044

Abstract: 56497
Contextual Info: ZI FINAL Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to

DA47

Abstract: DA48 6A05
Contextual Info: 6A05 THRU 6A10 Standard Rectifier YENYO Voltage Range 50 to 1000 V Current 6.0 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case: Molded plastic R-6

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. P 128 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

Contextual Info: Preliminary Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM Short Channel Revision 0.951 May 2000 Page -2 Rev. 0.951 May 2000 Preliminary Direct RDRAM™ K4R271669A for Short Channel Revision History

Contextual Info: システム性能を改善し設計を 簡素化する最新のDACとDAC バッファ 乗算型 D/A コンバータを電圧スイッチング・モードで使用する 場合の明らかな利点は、信号反転がないため、正のリファレン

P62F

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. E 128 M-bit Direct Rambus DRAM EO Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

uPD488448FB-C60-53-DQ1

Abstract: uPD488448FB-C71-45-DQ1 uPD488448FF-C60-53-DQ1 uPD488448FF-C60-53-DQ2 uPD488448FF-C71-45-DQ1 uPD488448FF-C71-45-DQ2 uPD488448FF-C80-45-DQ1 uPD488448FF-C80-45-DQ2
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. P 128 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

BA6 marking

Abstract: KM416RD DB31 KM416RD8AS
Contextual Info: Target Direct RDRAM KM416RD8AS 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks for Consumer Package Direct RDRAMTM Revision 0.9 July 1999 Rev. 0.9 July 1999 KM416RD8AS Target Direct RDRAM™ Revision History Version 0.9 July 1999 -Target - Based on the Rambus Datasheet ver. 0.9.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. E 128 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

Contextual Info: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Datasheet Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size • Independent Row, Column & Data Busses • 300MHz and 400MHz clock frequencies

dh 1117

Abstract: TDA4866 LG flyback v guard ups
Contextual Info: Philips Semiconductors Preliminary specification Full bridge current driven vertical deflection booster DA4866 FEATURES • Power supply and flyback supply voltage independent adjustable to optimize power consumption and flyback time • Fully integrated, few external components

M27C4096

Abstract: Am27C4096
Contextual Info: FINAL a Advanced Micro Devices Am27C4096 4 M egabit 262,144 x 16-B it C M O S EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 90 ns ■ Low power consumption — 100 pA maximum CMOS standby current ■ JEDEC-approved pinout ■ Single + 5 V power supply

amd socket 940 pinout

Abstract: ADVANCED MICRO DEVICES 40-PIN DIP kss 2mt FA 801 ic smd component
Contextual Info: a FINAL- Am27C2048 Advanced Micro Devices 2 Megabit 131,072 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ — 70 ns 100% Flashrite programming — Typical programming time of 16 seconds' ■ Low power consumption ■ Latch-up protected to 100 m A from -1 V to