Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E fc.^E bb53R31 ]> 0027077 Philips Semiconductors T20 «A PX Product specification Schottky barrier diodes PBYR2100CT series QUICK REFERENCE DATA FEATURES • Double diode in SMD power package • Low turn-on and high breakdown
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bb53R31
PBYR2100CT
PBYR280CT
PBYR290CT
PBYR21OOCT
PBYR2100CT
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GSM jamming scheme generator
Abstract: "IEEE 802.3" "Clause 27" BRXD12 BTXD02 APAA LUC3R04 S5241 OXCO LUC3S02 BTXD10
Text: Preliminary Data Sheet July 1997 microelectronics group Lucent Technologies Bell Labs Innovations LUC3R04 10/100 Mbits/s Managed Repeater CMOS Integrated Circuit Features • Four single repeaters per chip allow for port mobil ity repeater designs similar to those based on the
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LUC3R04
ATT1RX04.
100Base-TX,
LUC3S02
005002b
208-Pin
LUC3R04-FC
GSM jamming scheme generator
"IEEE 802.3" "Clause 27"
BRXD12
BTXD02
APAA
LUC3R04
S5241
OXCO
BTXD10
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Untitled
Abstract: No abstract text available
Text: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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MD56V62800A
152-Word
MD56V62800A
cycles/64
b724B40
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M37704
Abstract: No abstract text available
Text: M IT S U B IS H I M ICROCOMPUTERS M 37704E4BXXXFP.M 37704E4BFS PROM VERSION of M 37704M 4B XXXFP DESCRIPTION APPLICATION The M37704E4BXXXFP is a single-chip microcomputer de signed with high-performance CMOS silicon gate technolo Control devices for equipment that requires motor control
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37704E4BXXXFP
37704E4BFS
37704M
M37704E4BXXXFP
80-pin
M37704
32K-byte
25mVrms,
M37704
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GP150MHB16S
Abstract: No abstract text available
Text: Si GEC PLESSEY S E M I C O N D U C T O R S DS4131-5.2 G P 1 5 M H B 1 6 S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS VCES 1600V 3.3V CEfsat 150 A ^qCO NT) 300A ^qPK ) 270ns tr 590ns t, v • High Power Switching. ■ Motor Control.
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DS4131-5
270ns
590ns
44lbs
70lbs
88lbs
18lbs
1500g
GP150MHB16S
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PDF
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TNETX3100
Abstract: No abstract text available
Text: TNETX15AE ADDRESS-LOOKUP DEVICE S P W S 041A - A U G U S T 1997 - R EVISED O C TO B E R 1997 • Provides up to 8K-Address Matching System • • Provides Glueless External-Address Match EAM Interface to the TN ETX3150/TN ETX3150A/TN ETX3100 Provides Direct Input/Output (DIO) Interface
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TNETX15AE
ETX3150/TN
ETX3150A/TN
ETX3100
15-ns
TNETX3100
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Toshiba rdram
Abstract: TC59R1809
Text: TO S H IB A D IG IT A L IN TE G R A TE D CIRCUIT i N T t ^ K A t E D C IR C U IT T C 5 9 R 1 8 0 9 V K /H K TOSHIBA TFCHNICAL DATA SILICO N G> T E "C M O S TENTATIVE 2 ,0 9 7 ,152w ord x 9 - b i t Rambus DRAM INTRO DUCTIO N The TC59R1809VK/HK Rambus DRAM RDRAM is a next-generation*
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TC59R1809VK/HK
500MB/s.
32-pin
TC59R1809VK/H
SVP32-P-1125A)
TC59R1809VK/HKâ
Toshiba rdram
TC59R1809
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byv26c ph
Abstract: philips diode PH 15
Text: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse
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BYV26
BYV26A
BYV26C
BYV26D
BYV26B
BYV26E
byv26c ph
philips diode PH 15
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE D ^ 5 3 ^ 3 1 D027D37 3MH « A P X Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse
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D027D37
BYV36
BYV36A
BYV36B
BYV36C
BYV36E
BYV36F
BYV36G
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PDF
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DD27D
Abstract: land pattern for TSOP 2 50 MB257 TM 1828
Text: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin
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16-BIT
IDT71V008
10/12/15/20ns
44-pin
IDT71V008
288-bit
910-338-207Q
DD27D
land pattern for TSOP 2 50
MB257
TM 1828
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me 555
Abstract: 3tr5 active suspension MD56V62800A 270b5 D56V62800A
Text: E2G1054-18-62 O K I Semiconductor MD56V62800A This version: Jun. 1998 4-B ank x 2,097,152-W ord x 8-Bit SYNCHRONOUS DYNAM IC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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E2G1054-18-62
MD56V62800A
152-Word
MD56V62800A
cycles/64
b7E4E40
me 555
3tr5
active suspension
270b5
D56V62800A
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PDF
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TNETX3100
Abstract: DD35 TNETX15AE TNETX3150 TNETX3150A EAM02
Text: TNETX15AE ADDRESS-LOOKUP DEVICE SPWS041 - AU G U S T 1997 • • • • • • • • Provides up to 8K-Address Matching System Provides Glueless External-Address Match EAM Interface to the TN ETX3150/TN ETX3150 A/TN ETX3100 Uses Standard Off-the-Shelf SRAMs
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ETX3150/TN
ETX3150
ETX3100
TNETX15AE
SPWS041
S-PQFP-G144)
MS-026
4040147/C
TNETX3100
DD35
TNETX15AE
TNETX3150
TNETX3150A
EAM02
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PDF
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v17805
Abstract: No abstract text available
Text: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30, 1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers
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HM51W17805B
152-word
ADE-203-462B
28-pin
ns/70
v17805
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PDF
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5962-9096504MTA
Abstract: No abstract text available
Text: Military Field Programmable Gate Arrays Features A C T 3 Features Highly Predictable Performance with 100 Percent Automatic Placement and Routing • Highest-Performance, Highest-Capacity FPGA Family Device Sizes from 1200 to 10,000 gates up to 25,000 PLD
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1200XL
20-pin
Q002707
5962-9096504MTA
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Untitled
Abstract: No abstract text available
Text: HM51W17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi HM51W17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17400B offers Fast
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HM51W17400B
304-word
ADE-203-370A
mW/360
mW/324
QQ27021
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PDF
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Untitled
Abstract: No abstract text available
Text: P g jp i G E C PLESSEY DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 600V v CES v* CE Mt 2.1V 1000A ^C(CONT) 2000A ^C(PK) 290ns tr 430ns t, APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.
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DS4340-4
GP1000DHB06S
290ns
430ns
44lbs
70lbs
88lbs
18lbs
1500g
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PDF
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BYW 90
Abstract: BYW97G BYW97F BYV97G
Text: N APIER P H I L I P S / D I S C R E T E b'ìE D bbSB'iBl DQ27GbO P hilips S em ico n d u cto rs P relim inary sp ecification Fast s o ft-re co ve ry avalanche re ctifier d io d es FEA TU R E S • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse
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DQ27GbO
BYW97F;
BYW97G
BYW97F
BYW 90
BYW97G
BYV97G
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PDF
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ADS774SF
Abstract: No abstract text available
Text: B U R R -B R O W N « I ADS774 1 Microprocessor-Compatible Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • COMPATIBLE WITH ADC574, ADC674 AND ADC774 SOCKETS The ADS774 is a 12-bit successive approximation an alo g -to -d ig ital co n v erter using an in novative
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ADS774
ADC574,
ADC674
ADC774
120mW
ADS774
12-bit
ADC674,
ADS774SF
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PDF
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Untitled
Abstract: No abstract text available
Text: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word X 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page
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HM5116100B
216-word
ADE-203-371A
mW/385
mW/358
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PDF
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