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    Untitled

    Abstract: No abstract text available
    Text: SSP1N60A Advanced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V — 600 V


    OCR Scan     		PDF SSP1N60A 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: IRF520A Advanced Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^DS on = 0.2Í2 lD = 9-2 A ■ 175°C Operating Temperature


    OCR Scan     		PDF IRF520A QQ3b32fl 3b32ti O-220 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SSP7N80A Advanced Power MOSFET FEATURES B V DSS - 800 V • Avalanche Rugged Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. Low RDS(ON) ^DS(on) = 1.8 a < h- Rugged Gate Oxide Technology


    OCR Scan     		PDF SSP7N80A O-220 G04G4S4 003b32fl 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SSP6N70A A dvanced Power MOSFET FEATURES ^DSS — 700 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ^DS on = 1.8 Q < CD II _p ■ ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 700V


    OCR Scan     		PDF SSP6N70A 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SSP4N80A A d v a n c e d Power MOSFET FEATURES = 800 V B Vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V


    OCR Scan     		PDF SSP4N80A 7Tb4145 004G3Ã 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    lf7a

    Abstract: No abstract text available
    Text: SSP7N60A Advanced Power MOSFET FEATURES BVdss - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA (Max.) @ V DS = 600V


    OCR Scan     		PDF SSP7N60A O-220 00M1N DD3b33D lf7a

    Untitled

    Abstract: No abstract text available
    Text: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSP5N80A iti4142 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    5d3 diode

    Abstract: IRLZ44A 5d3 N-Channel A/SMD 5d3 diode
    Text: IRLZ44A Advanced Power MOSFET FEATURES BVdss = 60 V • Logic-Level Gate Drive ■ Avalanche Rugged Technology ■ ■ ■ ■ ■ ■ ^DS on = 0 -0 2 5 Q Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area


    OCR Scan     		PDF IRLZ44A O-220 71b4m2 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D 5d3 diode IRLZ44A 5d3 N-Channel A/SMD 5d3 diode

    74142

    Abstract: SGP40N60UF INDUCTION LAMP ballast lc21
    Text: SGP40N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast


    OCR Scan     		PDF SGP40N60UF 30-OTO T0-220 QQ3b32fl O-220 500MIN D3b33D 74142 SGP40N60UF INDUCTION LAMP ballast lc21

    IRFZ44A

    Abstract: ne 22 mosfet
    Text: IRFZ44A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* »Operating Temperature Lower Leakage Current : 10


    OCR Scan     		PDF IRFZ44A O-220 7Tb414S 30-OTO T0-220 003b32fl 3b32ti O-220 500MIN DD3b33D ne 22 mosfet

    irf610a

    Abstract: No abstract text available
    Text: IRF610A Advanced Power MOSFET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge - ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V H Low Rds(0n) ■ 1-169 £l(Typ.)


    OCR Scan     		PDF irf610a 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: a PRELIMINARY Advanced Micro Devices Am79C983 Integrated Multiport Repeater 2 IMR2 DISTINCTIVE CHARACTERISTICS • Repeater functionality compliant with IEEE 802.3 Repeater Unit specifications ■ Hardware implementation of Management Informa­ tion Base (M1B) with all of the counters, attributes,


    OCR Scan     		PDF Am79C983 vid03b3Ã 132-Pin PQB132

    Untitled

    Abstract: No abstract text available
    Text: SSP5N90A A d van ced Power MOSFET FEATURES - 900 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 900V


    OCR Scan     		PDF SSP5N90A GG4041f 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: IRL630A Advanced Power MOSFET FEATURES b v dss Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ V OS = 200V ■ Lower RDS(0N) : 0.335 « (Typ.) 0.4 O


    OCR Scan     		PDF IRL630A 003b32fl O-220 7Tb4142 DD3b33D

    E200

    Abstract: IRL510A
    Text: IRL510A A d va n ce d Power MOSFET FEATURES B V DSS • ■ ■ ■ Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance ■ ■ ■ H Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS=100V


    OCR Scan     		PDF IRL510A O-220 71b411S 30-OTO T0-220 QQ3b32fl 500MIN D3b33D E200 IRL510A

    ld33a

    Abstract: IRL610A
    Text: IRL610A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive Rds oii = 1-5 £2 ■ Avalanche Rugged Technology ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area lD = 3.3 A


    OCR Scan     		PDF IRL610A O-220 D3T14D Q1591 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E ld33a IRL610A

    ifr 350 mosfet

    Abstract: IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet
    Text: IRL620A Advanced Power MOSFET FEATURES 200 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10pA M ax. @ VOS = 200V Lower RDS(ON) : 0.609 i l (Typ.)


    OCR Scan     		PDF IRL620A O-220 003T14ti 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D ifr 350 mosfet IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet

    DO313

    Abstract: IRLZ34A 1GIT a2633
    Text: IRLZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10


    OCR Scan     		PDF IRLZ34A O-220 DO313Â 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D DO313 IRLZ34A 1GIT a2633

    ld18a

    Abstract: No abstract text available
    Text: IR F640A Advanced Power MOSFET FEATURES B V DSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V


    OCR Scan     		PDF F640A IRF640A QQ3b32fl O-220 7Tb4142 DD3b33D ld18a

    Untitled

    Abstract: No abstract text available
    Text: SSP2N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology = 5.0 £2 ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V


    OCR Scan     		PDF SSP2N60A 00403M5 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SSP3N90A A d van ced Power MOSFET FEATURES B V qss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 900V


    OCR Scan     		PDF SSP3N90A 0G4D370 003b32fl O-220 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: IRF630A A dvanced Power MOSEET Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V H Low Rds(0n) ■ 0.333 £1 (Typ.)


    OCR Scan     		PDF IRF630A QQ3b32fl O-220 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: IRL640A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive ■ Avalanche Rugged Technology ^DS on = 0 .1 8 ÎÎ ■ Rugged Gate Oxide Technology lD = 18 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area


    OCR Scan     		PDF IRL640A T0-220 IRLW/I640A 71b4142 003b32fl 3b321 00M1N 71b414E DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SSP2N90A Advanced Power MOSFET FEATURES - 900 V ^DS on = 7 .0 C i B V DSs • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V I Low RDs(on) • 5-838 Cl (Typ.) CM Extended Safe Operating Area


    OCR Scan     		PDF SSP2N90A 003b32fl O-220 7Tb4142 DD3b33D