DDR300
Abstract: SSTV16857 JESD89 SSTV16857DGG PCKV857 SSTV16859 SSTVF16857 DDR200 DDR266 DDR333
Text: PCKV857/PCKVF857 SSTV16857/SSTVF16857 Complete Register & PLL Solution for DDR200, DDR266, DDR300 and DDR333 Memory Modules SSTV16859 Philips Semiconductors provides a complete set of support ICs for DDR memory modules, comprising address/control registers
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PCKV857/PCKVF857
SSTV16857/SSTVF16857
DDR200,
DDR266,
DDR300
DDR333
SSTV16859
DDR200
DDR333,
SSTV16857/SSTVF16857
SSTV16857
JESD89
SSTV16857DGG
PCKV857
SSTV16859
SSTVF16857
DDR266
DDR333
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DDR200
Abstract: DDR266 DDR300 DDR333 DDR400 W3EG7266S-AD4
Text: White Electronic Designs W3EG7266S-AD4 -BD4 PRELIMINARY* 512MB – 64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL FEATURES DESCRIPTION Double-data-rate architecture DDR200, DDR266, DDR300 and DDR400 The W3EG7266S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM
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W3EG7266S-AD4
512MB
64Mx72
W3EG7266S
512Mb
64Mx8
DDR200,
DDR266,
DDR300
DDR200
DDR266
DDR333
DDR400
W3EG7266S-AD4
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Untitled
Abstract: No abstract text available
Text: W3EG7232S-xAD4 -xBD4 White Electronic Designs 256MB – 32Mx72 DDR SDRAM UNBUFFERED w/PLL FEATURES DESCRIPTION Double-data-rate architecture DDR200, DDR266 and DDR300 The W3EG7232S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM
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W3EG7232S-xAD4
256MB
32Mx72
DDR200,
DDR266
DDR300
333MHz
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micron ddr numbering
Abstract: DDR200 DDR266 DDR300 DDR333 r2 137
Text: W3EG7232S-xAD4 -xBD4 White Electronic Designs 256MB – 32Mx72 DDR SDRAM UNBUFFERED w/PLL FEATURES DESCRIPTION Double-data-rate architecture DDR200, DDR266 and DDR300 The W3EG7232S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM
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W3EG7232S-xAD4
256MB
32Mx72
W3EG7232S
256Mb
32Mx8
DDR200,
DDR266
DDR300
micron ddr numbering
DDR200
DDR300
DDR333
r2 137
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IBM "embedded dram"
Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
Text: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of
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conn95]
64-Mbit
Woo00]
EE380
class/ee380/
Wulf95]
Xanalys00]
Yabu99]
IBM "embedded dram"
m5m4v4169
Intel 1103 DRAM
Nintendo64
IBM98
toshiba fet databook
dynamic memory controler
MOSYS eDRAM
"1t-sram"
MoSys
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PDF
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K4H561638H-UCB3
Abstract: 256mb ddr333 200 pin 66 pin tsop package DDR300 DDR333 DDR400 WV3EG6437S-D4
Text: White Electronic Designs WV3EG6437S-D4 ADVANCED* 256MB – 2x16Mx64 DDR SDRAM SO-DIMM, UNBUFFERED FEATURES DESCRIPTION Unbuffered Double-data-rate architecture The WV3EG6437S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR
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WV3EG6437S-D4
256MB
2x16Mx64
WV3EG6437S
256Mb
16Mx16
DDR300
DDR400
K4H561638H-UCB3
256mb ddr333 200 pin
66 pin tsop package
DDR333
DDR400
WV3EG6437S-D4
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PDF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet Document Number: MSC7118 Rev. 7, 4/2008 MSC7118 Low-Cost 16-bit DSP with DDR Controller • StarCore SC1400 DSP extended core with one SC1400 DSP core, 256 Kbyte of internal SRAM M1 memory, 16 way 16 Kbyte instruction cache ICache , four-entry write buffer, programmable
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MSC7118
16-bit
SC1400
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MSC8100
Abstract: ELECTRONIC dimming BALLAST DEMO56F8013 MC56F8013VFAE MC56F8014VFAE 32PIN TQFP FREESCALE DSP56303AG100 XC56309AG100 DSPA56371AF150 56F8345-56F8367
Text: Digital Signal Processors and Controllers Quarter 4, 2005 SG1004Q42005 Rev 0 About This Revision–Q4/2005 When new products are introduced, a summary of new products will be provided in this section. However, the New Product section will only appear on this page when new products
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SG1004Q42005
Q4/2005
SG1004Q42005
MSC8100
ELECTRONIC dimming BALLAST
DEMO56F8013
MC56F8013VFAE
MC56F8014VFAE
32PIN TQFP FREESCALE
DSP56303AG100
XC56309AG100
DSPA56371AF150
56F8345-56F8367
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foxconn
Abstract: Y27 sot23 zener FW82801FBM Mobile Dothan alviso-GM Socket AM2 Compal Electronics LA-2592 APW7057 ls-2597
Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Dothan uFCPGA with Intel Alviso_GM+ICH6-M core logic 2005-04-10 3 3 LA-2592 REV:3A 4 4 Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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LA-2592
LA-2592
PR143
foxconn
Y27 sot23 zener
FW82801FBM
Mobile Dothan
alviso-GM
Socket AM2
Compal Electronics
APW7057
ls-2597
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PDF
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256mb ddr333 200 pin
Abstract: DDR300 DDR333 NT5DS32M8AT NT5DS32M8AT-6 NT5DS32M8AW NT5DS64M4AT NT5DS64M4AT-6 NT5DS64M4AW
Text: NT5DS64M4AT NT5DS64M4AW NT5DS32M8AT NT5DS32M8AW 256Mb DDR333/300 SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions. • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
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NT5DS64M4AT
NT5DS64M4AW
NT5DS32M8AT
NT5DS32M8AW
256Mb
DDR333/300
66pin
DDR333
DDR300
71REF
256mb ddr333 200 pin
DDR300
DDR333
NT5DS32M8AT-6
NT5DS32M8AW
NT5DS64M4AT-6
NT5DS64M4AW
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3EG6437S-D4 PRELIMINARY* 256MB – 2x16Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6437S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR
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W3EG6437S-D4
256MB
2x16Mx64
DDR200,
DDR266,
DDR300
DDR400
32Mx64,
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K4H561638H-UCB3
Abstract: K4H561638 T26A
Text: White Electronic Designs WV3EG6437S-D4 ADVANCED* 256MB – 2x16Mx64 DDR SDRAM SO-DIMM, UNBUFFERED FEATURES DESCRIPTION Unbuffered Double-data-rate architecture The WV3EG6437S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR
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WV3EG6437S-D4
256MB
2x16Mx64
DDR300
DDR400
8K/64ms
DDR300)
DDR400)
32Mx64,
K4H561638H-UCB3
K4H561638
T26A
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TSOP66
Abstract: HYB25D512400
Text: HYB25D512400/800/160AT L 512-MBit Double Data Rata SDRAM Preliminary Datasheet 2002-03-17 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR333 -8 -7 -6 100 133 133 125 143 166 • Double data rate architecture: two data transfers
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HYB25D512400/800/160AT
512-MBit
DDR200
DDR266A
DDR333
DDR333,
TSOP66
HYB25D512400
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DSP56300
Abstract: HD10 HD15 MSC7118 SC1400
Text: Freescale Semiconductor Data Sheet Document Number: MSC7118 Rev. 7, 4/2008 MSC7118 Low-Cost 16-bit DSP with DDR Controller • StarCore SC1400 DSP extended core with one SC1400 DSP core, 256 Kbyte of internal SRAM M1 memory, 16 way 16 Kbyte instruction cache ICache , four-entry write buffer, programmable
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MSC7118
16-bit
SC1400
DSP56300
HD10
HD15
MSC7118
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MSC7120
Abstract: DSP56300 acoustic echo cancellation DSP56321VF200 DSP56321VF275 DSP56321VL200 DSP56321VL275 DSPAUDIOEVMMB1 56F8013 DSP56321VL240 DSPB56374AFC
Text: Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010: , DSP56321VL200,DSP56321VL220,
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DSP56311VF150
DSP56311VL150
DSP56321VF200
DSP56321VF220
DSP56321VF240
DSP56321VF275,
DSP56321VL200
DSP56321VL220,
DSP56321VL240
DSP56321VL275
MSC7120
DSP56300 acoustic echo cancellation
DSP56321VF275
DSPAUDIOEVMMB1
56F8013
DSPB56374AFC
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DDR333
Abstract: NT5DS32M8AT NT5DS32M8AT-6 NT5DS32M8AW NT5DS32M8AW-6 NT5DS64M4AT NT5DS64M4AT-6 NT5DS64M4AW NT5DS64M4AW-6 256mb ddr333 200 pin
Text: NT5DS64M4AT NT5DS64M4AW NT5DS32M8AT NT5DS32M8AW 256Mb DDR333 SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions. • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
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NT5DS64M4AT
NT5DS64M4AW
NT5DS32M8AT
NT5DS32M8AW
256Mb
DDR333
66pin
DDR333
NT5DS32M8AT-6
NT5DS32M8AW
NT5DS32M8AW-6
NT5DS64M4AT-6
NT5DS64M4AW
NT5DS64M4AW-6
256mb ddr333 200 pin
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DDR200
Abstract: DDR266A DDR266B DDR300 VG37256802AT
Text: VG37256402AT VG37256802AT VIS CMOS DDR Synchronous Dynamic RAM Description The 256Mb DDR SDRAM is a high-speed COMS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. A bidirectional data strobe DQS is transmitted externally, along with data, for use in data capture at
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VG37256402AT
VG37256802AT
256Mb
1G5-0193
DDR200
DDR266A
DDR266B
DDR300
VG37256802AT
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PDF
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3EG6437S-D4 PRELIMINARY* 256MB – 32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6437S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight
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W3EG6437S-D4
256MB
32Mx64
W3EG6437S
256Mb
16Mx16
DDR200,
DDR266,
DDR300
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PDF
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DSP56300
Abstract: HD10 HD15 MSC7119 SC1400
Text: Freescale Semiconductor Data Sheet Document Number: MSC7119 Rev. 6, 7/2007 MSC7119 Low-Cost 16-bit DSP with DDR Controller and 10/100 Mbps Ethernet MAC • StarCore SC1400 DSP extended core with one SC1400 DSP core, 256 Kbyte of internal SRAM M1 memory, 16 way 16 Kbyte
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MSC7119
16-bit
SC1400
DSP56300
HD10
HD15
MSC7119
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GPIA20
Abstract: duplex thermocouple SC1000-family GPIA21 D24-D30 scl4511 Micron DDR SDRAM designline mc711
Text: Freescale Semiconductor Technical Data MSC7119 Rev. 3, 12/2005 MSC7119 Low-Cost 16-bit DSP with DDR Controller and 10/100 Mbps Ethernet MAC JTAG AMDMA 128 64 OCE10 to IPBus SC1400 Core Trace Buffer 8 KB 64 M2 SRAM (192 KB) 128 Boot ROM (8 KB) 128 ASM2 MUX
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MSC7119
MSC7119
16-bit
SC1400
OCE10
HDI16
HDI16)
GPIA20
duplex thermocouple
SC1000-family
GPIA21
D24-D30
scl4511
Micron DDR SDRAM designline
mc711
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DSP56309VF100A
Abstract: DSP56309AG100A 56800E 56F800 56F805 56F807 56F8300 MC56F8322MFA60 sensorless BLDC foc MC56F8322VFA60
Text: DSP Quarter 4, 2007 SG1004Q42007 Rev 0 56800 FAMILY 56F800 Series General Purpose 16-Bit Fixed Point Note Applications Development Tools Benefits Motion Control • Smart appliances • Environmental controls • Instrumentation Refer to Development Tools beginning on page 15.
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SG1004Q42007
56F800
16-Bit
DSP56309VF100A
DSP56309AG100A
56800E
56F805
56F807
56F8300
MC56F8322MFA60
sensorless BLDC foc
MC56F8322VFA60
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PDF
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IXP2325
Abstract: IXP42X DDR300 1752-ball
Text: Product Brief Intel IXP2325 Network Processor Enables access and edge applications to 1 Gbps Product Highlights services and continue to minimize development • Two fully programmable multi-threaded micro- time and cost. To meet these needs and extend engines with large control store memory for
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IXP2325
32-bit
0605/QUA/CM/PDF
303679-003US
IXP42X
DDR300
1752-ball
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PDF
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PCB VK 557
Abstract: HYS64D128021EBDL-6-D qimonda pc3200
Text: January 2009 HYS64D 128021 E BDL – 5 – D HYS64D 128021 E BDL – 6 – D 200-Pin Small-Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Internet Data Sheet Rev. 1.00 Internet Data Sheet HYS64D128021EBDL–[5/6]–D Small-Outline DDR SDRAM Modules
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HYS64D
200-Pin
HYS64D128021EBDL
HYS64D128021EBDL
PCB VK 557
HYS64D128021EBDL-6-D
qimonda pc3200
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Brief Intel IXP2325 Network Processor Enables access and edge applications to 1 Gbps Product Highlights services and continue to minimize development • Two fully programmable multi-threaded micro- time and cost. To meet these needs and extend engines with large control store memory for
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IXP2325
32-bit
0904/QUA/CM/PDF
303679-002US
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PDF
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