Untitled
Abstract: No abstract text available
Text: GSI550 Transistors N-Channel IGBT with Current Sensing V BR CES (V)500 V(BR)GES (V)25 I(C) Max. (A)80 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case700m td(on) Max (s) On time delay100n t(r) Max. (s) Rise time200nÂ
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GSI550
Junc-Case700m
delay100nÃ
time200nÃ
time900nÃ
StyleTO-218
Code5-71
NumberTR00500071
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Untitled
Abstract: No abstract text available
Text: HGTG24N60D1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)25 I(C) Max. (A)40 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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HGTG24N60D1
delay100nÃ
time150nÃ
time900n
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Untitled
Abstract: No abstract text available
Text: IXGH30N60U1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8
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IXGH30N60U1
Junc-Case620m
delay100nÃ
time200nÃ
time500nÃ
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Untitled
Abstract: No abstract text available
Text: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8
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IXGH30N60AU1
Junc-Case620m
delay100nÃ
time200nÃ
time500nÃ
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Untitled
Abstract: No abstract text available
Text: HGTG20N120E2 Transistors N-Channel IGBT V BR CES (V)1200 V(BR)GES (V) I(C) Max. (A)34 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case0.83 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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HGTG20N120E2
delay100nÃ
time150nÃ
time620n
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Untitled
Abstract: No abstract text available
Text: HGTG20N100D2 Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)34 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case0.83 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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HGTG20N100D2
delay100nÃ
time150nÃ
time650n
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Untitled
Abstract: No abstract text available
Text: IXGH30N30 Transistors N-Channel IGBT V BR CES (V)250 V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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IXGH30N30
Junc-Case620m
delay100nÃ
time200nÃ
time700nÃ
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Untitled
Abstract: No abstract text available
Text: HGTG24N60D1D Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)25 I(C) Max. (A)40 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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HGTG24N60D1D
delay100nÃ
time150nÃ
time900n
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Untitled
Abstract: No abstract text available
Text: HGTG12N60D1D Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)21 Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.67 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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HGTG12N60D1D
delay100nÃ
time150nÃ
time600n
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