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    DIODE N7 S2 Search Results

    DIODE N7 S2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE N7 S2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75307D

    Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 43cts 75307D 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334

    75332p

    Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332p 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101


    Original     		PDF KSM038AN06A0 KSMI038AN06A0 O-220AB O-262AB 24e-3 08e-3 28e-2 FDP035AN06A0T 45e-3 65e-2

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Semiconductor Data Sheet March 1999 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 32e-3 52e-2 41e-1 13e-1 83e-2 HUF75344 15e-3

    Untitled

    Abstract: No abstract text available
    Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2512NZ FDW2512NZ

    IRF530

    Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
    Text: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRF530 O-220AB IRF530 IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3, HUF75329D3S Semiconductor March 1999 Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S 57e-2 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3

    75639p

    Abstract: 30E2 75639g
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor January 1999 53A, 100 V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Num ber 4477.4 Features • 5 3 A ,1 0 0 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    OCR Scan     		PDF HUF75639G3, HUF75639P3, HUF75639S3S HUF75639 500e-2 35e-1 88e-3 18e-2 75639p 30E2 75639g

    Untitled

    Abstract: No abstract text available
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307

    75343P

    Abstract: No abstract text available
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75343G3, HUF75343P3, HUF75343S3S 48e-1 23e-1 96e-2 HUF75343 15e-3 50e-2 40e-2 75343P

    Untitled

    Abstract: No abstract text available
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3S HUF75337

    Untitled

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 98e-1 99e-1 97e-2 HUF75339 00e-3 90e-2 95e-3

    Untitled

    Abstract: No abstract text available
    Text: HUF75321D3, HUF75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75321D3, HUF75321D3S HUF75321D 10e-3 72e-2 67e-2 30e-1 49e-1

    76121P

    Abstract: No abstract text available
    Text: HUF76121P3, HUF76121S3S S em iconductor Data Sheet 47A, 30 V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76121P3, HUF76121S3S HUF76121 76121P

    Diode LT n5

    Abstract: No abstract text available
    Text: HUF75309P3, HUF75309D3, HUF75309D3S S em iconductor Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. " This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 Diode LT n5

    75307D

    Abstract: No abstract text available
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet March 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307 75307D

    TL 431 model SPICE

    Abstract: Simulation Model tl 431
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 TL 431 model SPICE Simulation Model tl 431

    KP120

    Abstract: No abstract text available
    Text: HUF76132P3, HUF76132S3S S em iconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76132P3, HUF76132S3S 51e-2 03e-2 05e-2 81e-1 45e-1 HUF76132 50e-3 18e-2 KP120

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2

    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3S Semiconductor Data Sheet June 1999 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75321P3, HUF75321S3S HUF75321P 10e-3 72e-2 67e-2 30e-1 49e-1

    75344G

    Abstract: 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST
    Text: interrii HUF75344G3, HUF75344P3, HUF75344S3S January 2000 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST

    TSOP-6 .54

    Abstract: AN7254 AN7260 ITF87012SVT SC-95 TB370
    Text: ITF87012SVT interrii January. m i Data Sheet PRELIMINARY 6A, 20 V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET File Number 4810.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.035i2, VGs = 4.5V Packaging ‘ rDS(ON) = 0.038i2, VGs = 4.0V TSOP-6


    OCR Scan     		PDF ITF87012SVT 00e-3 10e-2 00e-2 00e-1 20e-2 00e-2 TSOP-6 .54 AN7254 AN7260 ITF87012SVT SC-95 TB370

    AN7254

    Abstract: AN7260 ITF87068SQT TB370 1654.C 50E7
    Text: ITF87068SQT interrii F e b ru ary . m i Data Sheet 9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET File Number 4811.1 Features • Ultra Low On-Resistance ‘ r DS ON = 0.015i2, Packaging TSSO P-8 v gs = -4.5V ‘ r DS(ON) = 0.016£2, v qs = -4.0V


    OCR Scan     		PDF ITF87068SQT AN7254 AN7260 ITF87068SQT TB370 1654.C 50E7

    lambda IC 101

    Abstract: AN7254 AN7260 ITF86172SK8T MS-012AA TB370 vj04
    Text: ITF86172SK8T interrii January. m i Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET File Number 4809.1 Features • Ultra Low On-Resistance Packaging ‘ rDS ON = 0 .0 1 6£i, v gs = - 1 0 V S 0 8 (JEDEC MS-012AA) ‘ rDS(ON) = 0.023i2, VGS = - 4 .5 V


    OCR Scan     		PDF MS-012AA) ITF86172SK8T ITF86172SK8T MS-012AA 330mm EIA-481 lambda IC 101 AN7254 AN7260 MS-012AA TB370 vj04