Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DPD REFERENCE DESIGN Search Results

    DPD REFERENCE DESIGN Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    Snowflake-Ornament-Reference-Design Renesas Electronics Corporation Snowflake Ornament Reference Design Featuring Power and Analog Components Visit Renesas Electronics Corporation

    DPD REFERENCE DESIGN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E0598E21

    Abstract: No abstract text available
    Text: TECHNICAL NOTE Low Power Function of Mobile RAM Deep Power Down DPD CAUTION This document describes Deep Power Down (DPD), one of low power functions that have been adapted to Mobile RAM. All related operations and numerical values in this technical note are examples for reference only.


    Original
    PDF M01E0107 E0598E21 E0598E21

    verilog code for cordic algorithm

    Abstract: cordic algorithm code in verilog FIR filter design using cordic algorithm CORDIC adaptive algorithm dpd verilog code for dpd verilog code for cordic altera CORDIC ip verilog code for half subtractor verilog code for cordic algorithm for wireless
    Text: Digital Predistortion Reference Design Application Note AN-314-1.0 Introduction Power amplifiers PAs for for third-generation (3G) wireless communication systems need high linearity at the PA output, to achieve high adjacent channel leakage ratio (ACLR) and low error vector


    Original
    PDF AN-314-1 verilog code for cordic algorithm cordic algorithm code in verilog FIR filter design using cordic algorithm CORDIC adaptive algorithm dpd verilog code for dpd verilog code for cordic altera CORDIC ip verilog code for half subtractor verilog code for cordic algorithm for wireless

    4x4 mimo

    Abstract: RF Transceiver mimo DPD reference design 2x2 MIMO "crest reduction factor" 4x4 multipliers CPRI CPRI CDR CPRI Multi Rate JESD204A
    Text: Reduce Cost, Power, and Size Designing Remote Radio Head Applications with Transceiver FPGAs To drive down cost, power consumption, and form factor of your remote radio head RRH and RF card applications, build your designs with custom logic devices with transceivers. Altera’s broad portfolio of transceiver FPGAs and ASICs,


    Original
    PDF SS-01050-2 4x4 mimo RF Transceiver mimo DPD reference design 2x2 MIMO "crest reduction factor" 4x4 multipliers CPRI CPRI CDR CPRI Multi Rate JESD204A

    SM9403BM

    Abstract: No abstract text available
    Text: SM9403BM DVDRAM Servo-amplifier LSI NIPPON PRECISION CIRCUITS INC. OVERVIEW The SM9403BM is a DVDROM and DVDRAM servo preprocessor LSI, designed for double-speed format DVDROM and DVDRAM drives. The SM9403BM is fabricated using a BiCMOS process, and incorporates an analog signal processing circuit


    Original
    PDF SM9403BM SM9403BM 36-pin NC9813AE CIRCUITS--18

    TN-45-20

    Abstract: No abstract text available
    Text: TN-45-20: Low-Power Options for Async/Page CellularRAM Introduction Technical Note Low-Power Options for Async/Page CellularRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM, early-generation asynchronous, and page PSRAM. This backward compatibility


    Original
    PDF TN-45-20: 128Mb 09005aef822cf141/Source: 09005aef822cf0d2 TN-45-20

    microprocessor types

    Abstract: K1B2816B7M-I UtRAM Density K1B2816
    Text: Advance UtRAM K1B2816B7M Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length


    Original
    PDF K1B2816B7M 8Mx16 microprocessor types K1B2816B7M-I UtRAM Density K1B2816

    6T SRAM

    Abstract: SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram
    Text: TN-45-17: CellularRAM Replacing Single- and Dual-CE# SRAM Introduction Technical Note Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM Introduction Micron CellularRAM™ devices are designed to be backward-compatible with 6T SRAM


    Original
    PDF TN-45-17: sheet--MT45W1MW16PD 09005aef8214f7dc/Source: 09005aef821149d2 TN4517 6T SRAM SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram

    digital Pre-distortion

    Abstract: DIGITAL IF RECEIVER RF Receiver LTM9003 250MspsADC
    Text: News Release ⎜ www.linear.com Digital Predistortion uModule Receiver Simplifies Basestation Design MILPITAS, CA – July 13, 2009 – Linear Technology introduces the LTM9003, a wideband RF-to-digital receiver subsystem that includes a high performance 12-bit, 250Msps


    Original
    PDF LTM9003, 12-bit, 250Msps LTM9003 digital Pre-distortion DIGITAL IF RECEIVER RF Receiver 250MspsADC

    BLF6G22-130

    Abstract: doherty combiner blf6g22
    Text: NXP Doherty reference design with BLF6G22-130 Boost the efficiency of UMTS macrocell basestations Deliver the best performance with our state-of-the-art LDMOS technology in a Doherty amplifier. This easy-to-use reference design enhances the efficiency of your basestation system while


    Original
    PDF BLF6G22-130 BLF6G22-130 doherty combiner blf6g22

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs GC5330 GC5337 SLWS226 B – DECEMBER 2010 – REVISED JANUARY 2011 www.ti.com Wideband Transmit-Receive Digital Signal Processors Check for Samples: GC5330, GC5337 FEATURES APPLICATIONS • • • • • • • • 1 •


    Original
    PDF GC5330 GC5337 SLWS226 GC5330, 62-MHz

    TN4612

    Abstract: mobile dram IDD8
    Text: TN-46-12: Mobile DRAM Power-Saving Features/Calculations Introduction Technical Note Mobile DRAM Power-Saving Features and Power Calculations Introduction It’s important for today’s mobile system designer to be aware of the power demands of the system DRAM. A key concern is the DRAM’s average power consumption, which


    Original
    PDF TN-46-12: TN-46-03, 09005aef81b29582/Source: 09005aef818eb5b9 TN4612 mobile dram IDD8

    NLF7224

    Abstract: No abstract text available
    Text: NetLogic Microsystems’ Digital Front-End Reference Designs use NXP’s JESD204B Converters Rev. 1 — 3 April 2012 White paper Document information Info Content Author s Maury Wood – General Manager, High-Speed Converters, NXP Semiconductors; Tim Ryan – Director of Systems Engineering, NetLogic


    Original
    PDF JESD204B JESD204B ADC1443D DAC1628D NLF7224

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAMTM 1.0 Memory MT45W4MW16P* *Note: Not recommended for new designs. For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/ Features Figure 1:


    Original
    PDF MT45W4MW16P* 09005aef80be1ee8/Source: 09005aef80be1f7f

    CHN 933

    Abstract: GC5325
    Text: GC5322 www.ti.com SLWS206D – FEBRUARY 2008 – REVISED NOVEMBER 2010 GC5322 Wideband Digital Predistortion Transmit Processor Check for Samples: GC5322 FEATURES 1 • • 2 • • • • • Integrated DUC, CFR, and DPD Solutions 40-MHz 28-Mhz Signal Bandwidth, Third


    Original
    PDF GC5322 SLWS206D GC5322 40-MHz 28-Mhz) CDMA2000 352-Ball 27-mm CHN 933 GC5325

    Untitled

    Abstract: No abstract text available
    Text: Preliminary UtRAM K1B3216B7D Document Title 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft - Design target Remark December 21, 2004 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original
    PDF K1B3216B7D 2Mx16

    LTC5585

    Abstract: demodulate IR phase shifter dc to 100mhz 4G base station power amplifier
    Text: Optimizing the Performance of Very Wideband Direct Conversion Receivers Design Note 1027 John Myers, Michiel Kouwenhoven, James Wong, Vladimir Dvorkin Introduction Zero-IF receivers are not new; they have been around for some time and are prominently used in cell phone


    Original
    PDF 10log dn1027f LTC5585 demodulate IR phase shifter dc to 100mhz 4G base station power amplifier

    Untitled

    Abstract: No abstract text available
    Text: 2 Meg x 16, 1 Meg x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAMTM 1.0 Memory MT45W2MW16PA MT45W1MW16PA* *Note: Please contact the factory for all new 16Mb designs. For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/cellularram/


    Original
    PDF MT45W2MW16PA MT45W1MW16PA* 09005aef80d481d3/Source: 09005aef80d48266

    BLM31P500SPT

    Abstract: b0372 amplifier equalizer mixer connection diagram FB17 b0371 b0370 GC5325 FB26 HBM W10 s0315
    Text: GC5328 www.ti.com. SLWS218 – OCTOBER 2009 GC5328 Low Power Wideband Digital Predistortion Transmit Processor


    Original
    PDF GC5328 SLWS218 GC5328 20-MHz CDMA2000/TDSCDMA, GC5328IZER BLM31P500SPT b0372 amplifier equalizer mixer connection diagram FB17 b0371 b0370 GC5325 FB26 HBM W10 s0315

    samsung LVDS 30 PIN

    Abstract: GC5325 SPRU711 DPD signals 128Mb DDR SDRAM samsung version 0.3 BB14
    Text: GC5328 www.ti.com SLWS218A – OCTOBER 2009 – REVISED OCTOBER 2009 GC5328 Low-Power Wideband Digital Predistortion Transmit Processor Check for Samples: GC5328 FEATURES 1 • • • • • • • • Integrated DUC, CFR, and DPD Solution 20-MHz Max. Signal Bandwidth, Based on Max.


    Original
    PDF GC5328 SLWS218A GC5328 20-MHz CDMA2000/TDSCDMA, GC5328IZER TMS320C6727 samsung LVDS 30 PIN GC5325 SPRU711 DPD signals 128Mb DDR SDRAM samsung version 0.3 BB14

    CHN 933

    Abstract: GC5325
    Text: GC5322 www.ti.com SLWS206D – FEBRUARY 2008 – REVISED NOVEMBER 2010 GC5322 Wideband Digital Predistortion Transmit Processor Check for Samples: GC5322 FEATURES 1 • • 2 • • • • • Integrated DUC, CFR, and DPD Solutions 40-MHz 28-Mhz Signal Bandwidth, Third


    Original
    PDF GC5322 SLWS206D GC5322 40-MHz 28-Mhz) CDMA2000 352-Ball 27-mm CHN 933 GC5325

    FB27

    Abstract: LTE DUC GC5325SEK SHV15 FB-28 HPA E23 GC5325
    Text: GC5322 www.ti.com SLWS206D – FEBRUARY 2008 – REVISED NOVEMBER 2010 GC5322 Wideband Digital Predistortion Transmit Processor Check for Samples: GC5322 FEATURES 1 • • 2 • • • • • Integrated DUC, CFR, and DPD Solutions 40-MHz 28-Mhz Signal Bandwidth, Third


    Original
    PDF GC5322 SLWS206D GC5322 40-MHz 28-Mhz) CDMA2000 352-Ball 27-mm FB27 LTE DUC GC5325SEK SHV15 FB-28 HPA E23 GC5325

    cd-rom circuit diagram

    Abstract: cd-rom ic focus signal servo track 100 pin ic with feedback
    Text: SM9404AF Read Channel IC for DVD-RAM/ROM NIPPON PRECISION CIRCUITS INC. OVERVIEW The SM9404AF is a read channel IC for DVD-RAM 4.7Gbyte , ROM (1/2- to 4x-speed), and CD-ROM (4×to 32-speed). FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Equalizer for waveform equivalence


    Original
    PDF SM9404AF SM9404AF 32-speed) NC0010AE cd-rom circuit diagram cd-rom ic focus signal servo track 100 pin ic with feedback

    Efficiency Improvement of a Handset WCDMA PA Module Using Adaptive Digital Predistortion

    Abstract: No abstract text available
    Text: Efficiency Improvement of a Handset WCDMA PA Module Using Adaptive Digital Predistortion Calogero D. Presti1, Andre G. Metzger2, Hal M. Banbrook2, Peter J. Zampardi2, and Peter M. Asbeck1 1 University of California, San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0447, USA


    Original
    PDF

    fsync

    Abstract: CS5349-BP
    Text: CS5349 jr a m k Semiconductor Corporation Single Supply, Stereo A/D Converter for Digital Audio General Description Features • Single +5 V Power Supply • Complete CM O S Stereo A/D System Delta-Sigma A/D Converters Digital Anti-Alias Filtering S/H Circuitry and Voltage Reference


    OCR Scan
    PDF CS5349 CS5349 16-bit 19-Bit CS5349-KP CS5349-BP CS5349-KS CS5349-BS 16-bits fsync