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    DRAM MODULE 30 PIN Search Results

    DRAM MODULE 30 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation

    DRAM MODULE 30 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N DRAM 256K X 8 MT2D2568 DRAM MODULE 256K x 8 DRAM FAST PAGE MODE (MT2D2568 _ MODULE IV IW L /lS k b . LOW POWER, EXTENDED REFRESH (MT2D2568 L) FEATURES PIN ASSIGNMENT (Top View) OPTIONS • Packages Leadless 30-pin SIMM Leaded 30-pin SIP • Power/Refresh


    OCR Scan     		PDF MT2D2568 30-pin 350mW 512-cycle MT2D2568)

    Untitled

    Abstract: No abstract text available
    Text: |U |IC =R O N 4 MEG 4 MEG DRAM MODULE X MT9D49 9 DRAM MODULE X 9 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 Packages Leadless 30 -pin SIM M 30-Pin SIMM (DE-4) Vcc CAS DQ1 DQ 2


    OCR Scan     		PDF MT9D49 30-pin 024-cycle A0-A10

    T2D19

    Abstract: No abstract text available
    Text: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM


    OCR Scan     		PDF MT2D18 30-pin MT2D18M-6 DG113SQ T2D19

    MT3D49

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 4 MEG 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Leadless 30-pin SIMM 30-Pin SIMM (DE-6) V cc CAS DQ1 AO A1


    OCR Scan     		PDF MT3D49 30-pin, 048-cycle 30-Pin A0-A10; A0-A10

    Untitled

    Abstract: No abstract text available
    Text: |U |C = R O N 4 MEG DRAM MODULE X 8 MT8D48 DRAM MODULE 4 MEG X 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 30 -pin SIM M 30-Pin SIMM (DE-3) Vcc CAS D01


    OCR Scan     		PDF MT8D48 30-pin 024-cycle T8D48M-6 A0-A10

    Untitled

    Abstract: No abstract text available
    Text: MT2D18 1 MEG X 8 DRAM MODULE M IC R O N 1 MEG DRAM MODULE X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process


    OCR Scan     		PDF MT2D18 MT2D18) MT2D18 30-pin, 450mW 024-cycle 128ms 400jiA I25ps

    MT4C4001

    Abstract: CC3220
    Text: I^ IIC Z R O N 1 MEG 1 MEG DRAM MODULE X X 8 MT2D18 DRAM MODULE 8 DRAM FAST-PAGE-MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT2D18 30-pin, 450mW 024-cycle 128ms MT2D18) 30-Pin MT4C4001 CC3220

    MT4C4M4

    Abstract: No abstract text available
    Text: 1» PRELIMINARY MICRON I 4 MEG SEIUCOMXJCTOA INC. X MT2D48 8 DRAM MODULE 4 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply


    OCR Scan     		PDF MT2D48 30-pin, 400mW 048-cycle 30-pin MT2D48M-6 30PPiMIN) A0-A10 pyTT2D48 MT4C4M4

    RRH cl2

    Abstract: 4c1024dj MT3D19 T3D19 MT301 MT3019
    Text: 1 MEG X 9 DRAM MODULE SEMICONDUCTOR ihC. 1 MEG X 9 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 9mW standby; 625mW active, typical


    OCR Scan     		PDF 30-pin 625mW 024-cycle MT3019 MT3D19 RRH cl2 4c1024dj T3D19 MT301

    T2D48

    Abstract: L99D
    Text: PRELIMINARY I^ IIC R O N 4 MEG 4 MEG DRAM MODULE X 8 X MT2D48 DRAM MODULE 8 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line m emory module • High-perform ance CM OS silicon-gate process • Single 5V +10% power supply


    OCR Scan     		PDF MT2D48 30-pin, 400mW 048-cycle 30-Pin T2D48M-6 A0-A10 T2D48 L99D

    256k 30-pin SIMM

    Abstract: No abstract text available
    Text: I^ IIC R O N 256K X MT3D2569 9 DRAM MODULE 256K X 9 DRAM DRAM MODULE FAST PAGE MODE MT3D2569 LOW POWER, EXTENDED REFRESH (MT3D2569 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CMOS silicon-gate process


    OCR Scan     		PDF MT3D2569 30-pin 625mW 512-cycle MT3D2569) 256k 30-pin SIMM

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 4 MEG X 9 DRAM MOEDULE 5EM1CQHOUCTOR. IH£L 4 MEG DRAM MODULE X 9 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply


    OCR Scan     		PDF 30-pin, 575mW 048-cycle 30-Pin MT3D49 T3049

    T3D19

    Abstract: 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM
    Text: [M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CM OS silicon-gate process


    OCR Scan     		PDF MT3D19 30-pin 625mW 024-cycle 128ms MT3D19) T3D19 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 4 MEG DRAM MODULE 4 MEG X MT3D49 9 DRAM MODULE X 9 DRAM FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line m emory module • High-perform ance CM OS silicon-gate process • Single 5V ±10% pow er supply • Low power, 12mW standby; 775mW active, typical


    OCR Scan     		PDF MT3D49 30-pin, 775mW 048-cycle 30-Pin A0-A10; A0-A10

    MT3D19

    Abstract: MT3D mt4c1024d
    Text: [M IC R O N 1 MEG DRAM MODULE 1 MEG X MT3D19 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CM OS silicon-gate process • Single 5V +10% pow er supply • Low power, 9mW standby; 625mW active, typical


    OCR Scan     		PDF MT3D19 30-pin 625mW 024-cycle MT3D19M-6 MT3D mt4c1024d

    MT4C4M4

    Abstract: No abstract text available
    Text: ADVANCE I^ IIC R O N 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 4 MEG x 9 DRAM FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 12mW standby; 775mW active, typical


    OCR Scan     		PDF MT3D49 30-pin, 775mW 048-cycle 30-Pin 7MT3D49 A0-A10; MT3049 A0-A10 MT4C4M4

    T3D19

    Abstract: No abstract text available
    Text: M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE (MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line m em ory module • High-perform ance, CM OS silicon-gate process


    OCR Scan     		PDF MT3D19 MT3D19) MT3D19 30-pin 024-cycle 128ms T3D19

    micron mt9d

    Abstract: 512-CYCLE
    Text: |V |IC = R O I\J 1 MEG DRAM MODULE X MT9D19 9 DRAM MODULE 1 MEG x 9 DRAM FAST PAGE MODE MT9D19 LOW POWER, EXTENDED REFRESH (MT9D19 L) FEATURES • Industry standard pinout in a 30-pin single-in-line package • High-performance, CM OS silicon-gate process


    OCR Scan     		PDF MT9D19 30-pin 512-cycle MT9D19) micron mt9d

    MT4C1024DJ

    Abstract: No abstract text available
    Text: [MICRON 1 MEG 1 MEG DRAM MODULE X X MT8D18 8 DRAM MODULE 8 DRAM FAST-PAGE-MODE MT8D18 LOW POWER, EXTENDED REFRESH (MT8D18L) FEATURES • Industry-standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5V ±10% power supply


    OCR Scan     		PDF MT8D18 30-pin 400mW 512-cycle MT8D18) MT8D18L) MT6D18 MT4C1024DJ

    30 pin SIP dram memory

    Abstract: No abstract text available
    Text: MICRON MT8C8024 DRAM MODULE 1MEG x 8 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package • High performance CMOS silicon gate process • Single 5V±10% power supply • All inputs, outputs and clocks are fully TTL and


    OCR Scan     		PDF MT8C8024 30-pin 1400mW 100ns 120ns MT8C8024 30 pin SIP dram memory

    Untitled

    Abstract: No abstract text available
    Text: MICRON 1 MEG DRAM MODULE 1 MEG X X MT9D19 9 DRAM MODULE 9 DRAM FAST PAGE MODE MT9D19 LOW POWER, EXTENDED REFRESH (MT9D19 L) FEATURES • Industry standard pinout in a 30-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply


    OCR Scan     		PDF MT9D19 MT9D19) MT9D19 30-pin 575mW 512-cycle

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC M ADVANCE IC R O N 4 MEG SSE T> m DRAM MODULE X MT3D49 9 DRAM MODULE b l l l S 4 tì 0004737 7TÔ • MRN 4 MEG x 9 DRAM - FEATURES • Industry standard pinout in a 30-pin, single-in-line m emory module • High-perform ance, CM OS silicon-gate process


    OCR Scan     		PDF MT3D49 30-pin, 048-cycle 30-Pin T3D49 A0-A10; A0-A10

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM594000A Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000A is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5114100A In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^<F decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM594000A HY5114100A HYM594000AM/ALM 1BC04-10-MAY93 4b750flfl 4b750flfl

    Untitled

    Abstract: No abstract text available
    Text: MICRON MT8C9024 DRAM MODULE 1MEG x 9 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package • High performance CMOS silicon gate process • Single 5V±10% power supply • All inputs, outputs and clocks are fully T I L and


    OCR Scan     		PDF MT8C9024 30-pin 1575mW 100ns 120ns 30-pim MT8C9024