DS98 Search Results

Contextual Info: Errata: CS5480 Rev B2 Silicon Reference CS5480 data sheet revision DS980F3 dated MAR’13 Erratum 1 - Using Line-cycle Synchronized Averaging Mode with DSP_LCK[4:0] Description Setting the DSP_LCK[4:0] bits in the RegLock register to 0x16 enables DSP write-protection

RBS 6601

Abstract: fault codes for RBS 6601 RBS 2202 Product Description for RBS 6601 6601 bts T7630 bts rbs 2202 CEPT-E1 f 4556 rbs 6601 description
Contextual Info: Device Advisory September 1999 T7630 Device Advisory for Version 2.0 of the Device Introduction This advisory applies to the T7630 Dual T1/E1 5.0 V Short-Haul Terminator as described in the May 1998 T7630 Dual T1/E1 5.0 V Short-Haul Terminator Terminator-II Preliminary Data Sheet (DS98-234TIC).

82914

Abstract: FW330F1-59T
Contextual Info: Requirement Document FW330F1-59T Power Module 36Vdc to 75Vdc Inputs; 3.3Vdc Output 330 Watts Description The FW330F1-59T Power Modules are the same as the FW330F1 Power Modules consult the FW330 series Power Modules Data Sheet, DS98-240, issued March 2000 for application details with the following exceptions:

Contextual Info: Errata: CS5490 Rev B2 Silicon Reference CS5490 data sheet revision DS982F3 dated MAR’13 Erratum 1 - Using Line-cycle Synchronized Averaging Mode with DSP_LCK[4:0] Description Setting the DSP_LCK[4:0] bits in the RegLock register to 0x16 enables DSP write-protection

str 6626

Abstract: tag 8833 TS127 08 T8100 MC 4538 ECTF Micro-Pro 51 T8100A T8102 T8105
Contextual Info: Advisory March 1999 Ambassador TM T8100 H.100/H.110 Interface and Time-Slot Interchanger This advisory details two changes to the AmbassadorTM T8100 H.100/H.110 Interface and Time-Slot Interchanger Preliminary Data Sheet: DS98-195NTNB. Change Affecting Page 15, Section 2.1.3 Address Mode Register

RBS 2202

Abstract: f 4556 THS24 PR21 T7630 T7633 SA517 805 T42 RFDC
Contextual Info: Device Advisory September 1999 T7633 Device Advisory for Version 1.0 of the Device Introduction This advisory applies to the T7633 Dual T1/E1 3.3 V Short-Haul Terminator as described in the May 1998 T7633 Dual T1/E1 3.3 V Short-Haul Terminator Advance Data Sheet DS98-244TIC .

Contextual Info: Errata: CS5484 Rev B2 Silicon Reference CS5484 data sheet revision DS981F3 dated MAR’13 Erratum 1 - Using Line-cycle Synchronized Averaging Mode with DSP_LCK[4:0] Description Setting the DSP_LCK[4:0] bits in the RegLock register to 0x16 enables DSP write-protection

T7290A

Abstract: T7690 T7693 TND1 CB-119
Contextual Info: Data Addendum September 1998 T7690 5.0 V T1/E1 Quad Line Interface T7693 3.3 V T1/E1 Quad Line Interface T7690 5.0 V T1/E1 Quad Line Interface, T7693 3.3 V T1/E1 Quad Line Interface DS98-233TIC Data Sheet Correction Pin Diagram (p. 4) Pins 93 and 94 were switched in the pin diagram. Pin 93 should be RRING4 and pin 94 should be RTIP4.

ixf26n50q

Abstract: 24N50 26N50Q 125OC ixf26N50
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

ixys dsi

Abstract: 30-08AC 30-12AC ir 2411
Contextual Info: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings

igbt induction cooker

Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B
Contextual Info: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM

28n60

Contextual Info: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient

3N120

Abstract: on6017 IXTP3N120
Contextual Info: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS

application notes IXGH 6N170

Abstract: 6N170
Contextual Info: Advance Technical Data High Voltage IGBT VCES IC25 VCE sat tfi(typ) IXGH 6N170 IXGT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25

IXTK80N25

Abstract: 80N25 megamos
Contextual Info: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS

24P20

Contextual Info: Standard Power MOSFET IXTH 24P20 P-Channel Enhancement Mode Avalanche Rated RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -200 V VGS Continuous ±20 V VGSM Transient ±30 V A ID25 TC = 25°C

Contextual Info: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet

10N170

Contextual Info: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V

16-06A

Abstract: DSEA16-06AC 1606a
Contextual Info: DSEA16-06AC IFAV = 2x8 A VRRM = 600 V trr = 35 ns HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 Type DSEA16-06AC ISOPLUS220TM 1 2 1 3 2 3 Isolated back surface * * Patent pending Symbol

1n80

Contextual Info: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

IXUC160N075

Contextual Info: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous

120N25

Abstract: SiEMENS EC 350 98 0
Contextual Info: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS

24N170

Contextual Info: Advance Technical Data High Voltage IGBT IXGH 24N170 VCES IXGT 24N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V

123B16

Abstract: 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q
Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM