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    M112

    Abstract: SD1541-01 SD1541-1 A 1458
    Text: SD1541-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS • 400 W min. DME 1025 - 1150 MHz • 6.5 dB min. GAIN • REFRACTORY GOLD METALLIZATION • EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND


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    SD1541-01 SD1541-1 SD1541-01 M112 SD1541-1 A 1458 PDF

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


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    LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239 PDF

    SD1899

    Abstract: No abstract text available
    Text: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION


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    SD1899 SD1899 PDF

    Epsilam-10

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF898 Designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of


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    MRF898/D MRF898 MRF898 MRF898/D Epsilam-10 PDF

    5308-2CC

    Abstract: 6 pin cdi epsilam 10 epsilam InMarSat power M151 SD1893-03 cdi ic
    Text: SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS P OUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL M151 hermetically sealed ORDER CODE


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    SD1893-03 SD1893-03 5308-2CC 6 pin cdi epsilam 10 epsilam InMarSat power M151 cdi ic PDF

    HUGHES mcw 550

    Abstract: discharge capacitor welding hughes welder welder hughes mcw 550 hughes capacitor discharge welder mcw-550 VTA90 welding "application note" MAXY90
    Text: Beam Lead Device Bonding to Soft Substrates Application Note 993 Introduction The hard gold surface on standard PC boards combined with soft substrate materials makes it almost impossible to successfully bond beam lead devices onto the boards with normally recommended


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    VTA90 MAXY90 MCW552 MA09-11 MA-02-25 WE-2231 HUGHES mcw 550 discharge capacitor welding hughes welder welder hughes mcw 550 hughes capacitor discharge welder mcw-550 VTA90 welding "application note" PDF

    Untitled

    Abstract: No abstract text available
    Text: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2L FL M170 epoxy sealed O RDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION


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    SD1899 SD1899 PDF

    MRB11040W

    Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
    Text: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an


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    FO-67 MRB11040W 0G4b32M T-33-13 711002b 0D4b32fl MRB11040W QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity PDF

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


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    33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips PDF

    RX1214B150W

    Abstract: No abstract text available
    Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C


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    bb53131 RX1214B150W RX1214B150W PDF

    Untitled

    Abstract: No abstract text available
    Text: • N AMER PHILIPS/DISCRETE □bE D ■ bbS3T31 D01S1S3 1 ■ PZB16035U _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A r-3 3 -u % MICROWAVE POWER TRANSISTORS N-P-N transistor fo r use in common-base, class-B, am plifier under c.w. conditions in m ilita ry and professional applications up to 1,6 GHz.


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    bbS3T31 D01S1S3 PZB16035U bb53T31 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHI L I P S / D I S CR E T E □ bE D bb53T31 DD1SE17 1 RZ1214B65Y T - 3 3 - 5 ~ PULSED M IC R O W A VE POWER TRANSISTOR N:P-N silicon microwave power transistor for use in a common-base, class-B wideband amplifier and operating under pulsed conditions in L-band radar applications.


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    bb53T31 DD1SE17 RZ1214B65Y T-33-IS 7Z94222 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N


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    MZ0912B100Y PDF

    Untitled

    Abstract: No abstract text available
    Text: 11_ N AMER PHILIPS/DISCRETE LbSBTBl 0015133 OLE D RX1214B150W r J - 3 2 ^ I 'o ' M IC R O W A V E POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.2 to 1.4 GHz frequency range.


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    RX1214B150W bb53T31 T-33-15 PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    MF1011B900Y

    Abstract: SC15
    Text: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C


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    MF1011B900Y MLC725 OT448A. MF1011B900Y SC15 PDF

    Philips CD 303

    Abstract: PZB16040U
    Text: « N AUER P H IL IP S / D IS C R E T E U t V h L U P M t N I OLE ]> • U À IA bbSBTBl O D IS IS T 2 ■ " ■ PZB16040U This data sheet contains advance information and specifications are subject to change w ithout notice. J V r-s 3 ~ n M IC R O W A V E PO W ER TRA N SISTO R


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    PZB16040U r-33-u G151b3 T-33-11 7Z942B7 Philips CD 303 PZB16040U PDF

    RZB12050Y

    Abstract: ATC capacitor transistor 421
    Text: N AMER PHILIPS/DISCRETE ObE D • b b 5 3 T 31 □ □ 15 2 7 =5 1 ■ RZB12050Y V 'r-? 3 - 3 PULSED MICROW AVE POW ER TRA N SISTO R NPN silicon microwave power transistor intended for use in a common-base, class-C narrowband amplifier operating under pulsed conditions.


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    bS3T31 FO-57C) 100/is; RZB12050Y ATC capacitor transistor 421 PDF

    NPN Silicon Epitaxial Planar Transistor

    Abstract: MZ0912B50Y TACAN
    Text: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting


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    MZ0912B50Y NPN Silicon Epitaxial Planar Transistor MZ0912B50Y TACAN PDF

    PZB16035U

    Abstract: discrete transistor amplifier 2.5 ghz
    Text: N AMER PHILIPS/DISCRETE □ bE D • bb53*i31 Q01S1S3 1 ■ L PZB16Ô35U r-33-it MICROWAVE POWER TRANSISTORS N-P-N transistor for use in common-base, class-B, amplifier under c.w. conditions in military and professional applications up to 1,6 GHz. Features


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    bb53131 Q01S1S3 PZB16Ã r-33-it 7Z93032 S3T31 00151S7 PZB16035U PZB16035U discrete transistor amplifier 2.5 ghz PDF

    RX1011B350Y

    Abstract: broad-band Microwave Class-C Transistor Amplifiers
    Text: N AMER P H I L I P S / D I S C R E T E bbSB^l ObE D 0 0 1 5 1 7 ^ fi D EVELOPM EN T DATA RX1011B350Y T h is data sheet contains advance inform ation and specifications are subject to change w ith out notice. r-f 33-/S" PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C


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    RX1011B350Y T-33- 7Z23071 RX1011B350Y broad-band Microwave Class-C Transistor Amplifiers PDF

    PZ1418B30U

    Abstract: PZ1721B25U PZ2024B20U
    Text: N AMER PHILIPS/DISCRETE DbE D • LbSBTBl DD1S137 3 ■ " PZ1418B30U PZ1721B25U PZ2024B20U J T - 3 3 - U MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS N-P-N transistors for use in common-base, class-B, broadband amplifiers under c.w. conditions in m ilitary and professional applications.


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    DD1S137 PZ1418B30U PZ1721B25U PZ2024B20U T-33-U PZ2024B20U PDF

    m147 transistor

    Abstract: 1029F M147 ci m147 SD1868
    Text: Hi f I r l / C lU O J v f I If P ro g re s s P o w ered b y T ec h no log y 140 Com m erce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1868 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.6-1.65GHz POWER OUT


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    SD1868 65GHz SD1868 S88SDI868-34 m147 transistor 1029F M147 ci m147 PDF

    epsilam

    Abstract: SD1886 25CC M155 TCC2023-6 chip die npn transistor NPN microwave power transistor 865
    Text: H * : If/lvf T»j-m ! fII P ro g re s s P o w e re d b y T ec h no log y "*4 Commerce Drive Montgom ery ville, PA 18936-1013 Tel: 215 631-9840 T C L 2 0 ^ O - D RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS • ■ ■ ■ ■ ■


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    TCC20 SD1886 TCC2023-6 withC2023-6 4-25pF 000pF TCC2023-6 epsilam 25CC M155 chip die npn transistor NPN microwave power transistor 865 PDF