FLX102MH12 Search Results

FLX102MH12 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLX102MH-12		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
FLX102MH-12		Unknown	FET Data Book		Scan	PDF

FLX102MH12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FLR024FH Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV Text: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D	OCR Scan	PDF	FLM7785-8C/D FLM8596-4C FLM8596-8C FLR014FH FLR014XP FLC311MG-4 FLS31ME 36dBm, FLS50 FLR024FH FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014FH FSC10FA FLR056XV
FLX102MH-12 Abstract: cu2cu FUJITSU XBAND FLX102MH12 Text: n FLX102MH-12 X-Ku Band Power GaAs FETs . I 1jU FEATURES • • • • • High Output Power: P-\|dB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX102MH-12 is a power GaAs FET that is designed for general	OCR Scan	PDF	FLX102MH-12 FLX102MH-12 cu2cu FUJITSU XBAND FLX102MH12
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: F\|.fjU,. FLX102MH-12 X-Ku Band Power GaAs FETs r U J I I ->U FEATURES • • • • • High O utput Power: P-\|<jB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION	OCR Scan	PDF	FLX102MH-12 FLX102M 02MH-12
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	PDF
PT 1440 Abstract: No abstract text available Text: F L X 102 M H - ¡2 X -k ii B a n d Power iaAs FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol uonamon Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs ~5 V 7.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature	OCR Scan	PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	PDF	FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
FLK202MH-14 Abstract: FLK052WG Text: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <tB) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH	OCR Scan	PDF	FLX102MH-12* 2MH-12* FLK012W FLK022W FLK052W FLK102MH-14* FLK202MH-14* FLR016FH FLR026FH FLK202MH-14 FLK052WG