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Fuji Electric Co Ltd


Fuji Electric Co Ltd FSX017LG TRANSISTOR,MESFET,N-CHAN,8V V(BR)DSS,35MA I(DSS),SOT-173VAR
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Quest Components	FSX017LG		8			1 $18 10 $16 100 $16 1000 $16 10000 $16	Buy Now

FSX017 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
FSX017LG	Eudyna Devices	General Purpose GaAs FET	Original	PDF
FSX017LG/001	Fujitsu	GaAs FET	Original	PDF
FSX017LG/001	Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF
FSX017LG/001-E1	Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF
FSX017LG-E1	Fujitsu	FET: P Channel: ID 0.075 A	Original	PDF
FSX017WF	Fujitsu	General Purpose GaAs FET	Original	PDF
FSX017X	Fujitsu	GaAs FET & HEMT Chip	Original	PDF
FSX017X/001	Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF
FSX017X/001	Fujitsu	GaAs FET	Original	PDF
FSX017X/001-E1	Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF
FSX017X-E1	Fujitsu	FET: P Channel: ID 0.075 A	Original	PDF

FSX017 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FSX017X Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	FSX017X FSX017X 12GHz. FCSI0598M200	PDF
FSX017LG Abstract: fujitsu gaas fet Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	FSX017LG FSX017LG 12GHz. FCSI0598M200 fujitsu gaas fet	PDF
FSX017WF Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	Original	FSX017WF FSX017WF 12GHz. FCSI0598M200	PDF
fujitsu hemt Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	FSX017X FSX017X 12GHz. fujitsu hemt	PDF
FSX017L Abstract: S12MAG Eudyna Devices X BAND power amplifiers Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	FSX017LG FSX017LG 12GHz. FSX017L S12MAG Eudyna Devices X BAND power amplifiers	PDF
Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	Original	FSX017WF FSX017WF 12GHz.	PDF
FSX017X Abstract: fujitsu hemt GaAs FET HEMT Chips Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	FSX017X FSX017X 12GHz. FCSI0598M200 fujitsu hemt GaAs FET HEMT Chips	PDF
fujitsu hemt Abstract: fujitsu gaas fet FSX017X GaAs FET HEMT Chips Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: PidB=21.5dBm Typ. @8.0GHz • High Power Gain: G-\|dB=11dB(Typ.)@8.0GHz • Proven Reliability DESCRIPTION The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	OCR Scan	FSX017X FSX017X 12GHz. FCSI0598M200 fujitsu hemt fujitsu gaas fet GaAs FET HEMT Chips	PDF
GaAs FET HEMT Chips Abstract: 12GHz 8GHz oscillator FSX017X fsx017 Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	FSX017X FSX017X 12GHz. GaAs FET HEMT Chips 12GHz 8GHz oscillator fsx017	PDF
FLC301XP Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5	OCR Scan	FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151	PDF
EUDYNA Abstract: FSX017X/001 FSX017X Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high	Original	FSX017LG/001 FSX017X/001 FSX017/001 FSX017LG/001 RATINGS4888 EUDYNA FSX017X/001 FSX017X	PDF
FSX017X/001 Abstract: bonder Fsx017LG fujitsu gaas fet Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high	Original	FSX017LG/001 FSX017X/001 FSX017X/001 FSX017LG/001 FCSI0598M200 bonder Fsx017LG fujitsu gaas fet	PDF
FSXO17WF Abstract: FSX017WF 12QHz fujitsu gaas fet Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P-\|<jB=21-5dB Typ. @8.0GHz High Power Gain: G-\|dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	OCR Scan	FSXO17WF FSX017WF 12GHz. FCSI0598M200 FSXO17WF 12QHz fujitsu gaas fet	PDF
FSX017WF Abstract: FSX017 Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	Original	FSX017WF FSX017WF 12GHz. FSX017	PDF

Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	FSX017LG FSX017LG 12GHz. FCSI0598M200	PDF
NF 817 Abstract: Eudyna Devices FSX017WF Eudyna Devices power amplifiers Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	Original	FSX017WF FSX017WF 12GHz. NF 817 Eudyna Devices Eudyna Devices power amplifiers	PDF
Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	Original	FSX017WF FSX017WF 12GHz. FCSI0598M200	PDF
fujitsu x band amplifiers Abstract: FSX017LG Q1150 fujitsu gaas fet Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P-\|dE3 = 16.0dBm Typ. @12.0GHz • High Power Gain: G ^ g = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	OCR Scan	FSX017L FSX017LG 12GHz. FCSI0598M200 fujitsu x band amplifiers Q1150 fujitsu gaas fet	PDF
Eudyna Devices X BAND power amplifiers Abstract: FSX017LG Eudyna Devices Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	FSX017LG FSX017LG 12GHz. U4888 Eudyna Devices X BAND power amplifiers Eudyna Devices	PDF
FSX017X Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	FSX017X FSX017X 12GHz.	PDF
FSX017LG Abstract: FSX017 Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	FSX017LG FSX017LG 12GHz. Uni73 FSX017	PDF
FLL105 Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202 Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ	OCR Scan	FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan		PDF
FSX017LG/001-E1 Abstract: FSX017LG Contextual Info: FSXOl 7LG G en eral Purpose Ga As F E i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS -5 V Total Power Dissipation Ptot 220 mW Storage Temperature Tstg -65 to +175	OCR Scan	2000Q. FSX017LG/001-E1 FSX017LG	PDF

FSX017 Search Results

FSX017 Price and Stock

Fuji Electric Co Ltd FSX017LG

FSX017 Datasheets (11)

FSX017 Datasheets Context Search

FSX017X

FSX017LG

FSX017WF

fujitsu hemt

FSX017L

FSX017X

fujitsu hemt

GaAs FET HEMT Chips

FLC301XP

EUDYNA

FSX017X/001

FSXO17WF

FSX017WF

NF 817

fujitsu x band amplifiers

Eudyna Devices X BAND power amplifiers

FSX017X

FSX017LG

FLL105

FLC301XP

FSX017LG/001-E1

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