FSX017X
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
FCSI0598M200
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FSX017LG
Abstract: fujitsu gaas fet
Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION
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FSX017LG
FSX017LG
12GHz.
FCSI0598M200
fujitsu gaas fet
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PDF
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FSX017WF
Abstract: No abstract text available
Text: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium
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FSX017WF
FSX017WF
12GHz.
FCSI0598M200
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PDF
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fujitsu hemt
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
fujitsu hemt
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PDF
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FSX017L
Abstract: S12MAG Eudyna Devices X BAND power amplifiers
Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION
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FSX017LG
FSX017LG
12GHz.
FSX017L
S12MAG
Eudyna Devices X BAND power amplifiers
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PDF
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Untitled
Abstract: No abstract text available
Text: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium
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FSX017WF
FSX017WF
12GHz.
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FSX017X
Abstract: fujitsu hemt GaAs FET HEMT Chips
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
FCSI0598M200
fujitsu hemt
GaAs FET HEMT Chips
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PDF
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GaAs FET HEMT Chips
Abstract: 12GHz 8GHz oscillator FSX017X fsx017
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
GaAs FET HEMT Chips
12GHz
8GHz oscillator
fsx017
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PDF
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EUDYNA
Abstract: FSX017X/001 FSX017X
Text: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high
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FSX017LG/001
FSX017X/001
FSX017/001
FSX017LG/001
RATINGS4888
EUDYNA
FSX017X/001
FSX017X
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FSX017X/001
Abstract: bonder Fsx017LG fujitsu gaas fet
Text: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high
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FSX017LG/001
FSX017X/001
FSX017X/001
FSX017LG/001
FCSI0598M200
bonder
Fsx017LG
fujitsu gaas fet
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FSX017WF
Abstract: FSX017
Text: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium
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FSX017WF
FSX017WF
12GHz.
FSX017
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PDF
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Untitled
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
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PDF
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Untitled
Abstract: No abstract text available
Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION
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FSX017LG
FSX017LG
12GHz.
FCSI0598M200
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PDF
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NF 817
Abstract: Eudyna Devices FSX017WF Eudyna Devices power amplifiers
Text: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium
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FSX017WF
FSX017WF
12GHz.
NF 817
Eudyna Devices
Eudyna Devices power amplifiers
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Eudyna Devices X BAND power amplifiers
Abstract: FSX017LG Eudyna Devices
Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION
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FSX017LG
FSX017LG
12GHz.
U4888
Eudyna Devices X BAND power amplifiers
Eudyna Devices
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PDF
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FSX017X
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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Original
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FSX017X
FSX017X
12GHz.
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PDF
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FSX017LG
Abstract: FSX017
Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION
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FSX017LG
FSX017LG
12GHz.
Uni73
FSX017
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fujitsu hemt
Abstract: fujitsu gaas fet FSX017X GaAs FET HEMT Chips
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: PidB=21.5dBm Typ. @8.0GHz • High Power Gain: G-|dB=11dB(Typ.)@8.0GHz • Proven Reliability DESCRIPTION The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
FCSI0598M200
fujitsu hemt
fujitsu gaas fet
GaAs FET HEMT Chips
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PDF
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FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FHX04X
FHX05X
FHX06X
FHX13X
FHX14X
FHX35X
FHX45X
FHR02X
FHR20X
FSX017X
FLC301XP
Flr016xp
fsx51x
FLC151XP
FLC151
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FSXO17WF
Abstract: FSX017WF 12QHz fujitsu gaas fet
Text: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P-|<jB=21-5dB Typ. @8.0GHz High Power Gain: G-|dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium
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FSXO17WF
FSX017WF
12GHz.
FCSI0598M200
FSXO17WF
12QHz
fujitsu gaas fet
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PDF
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fujitsu x band amplifiers
Abstract: FSX017LG Q1150 fujitsu gaas fet
Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P-|dE3 = 16.0dBm Typ. @12.0GHz • High Power Gain: G ^ g = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION
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FSX017L
FSX017LG
12GHz.
FCSI0598M200
fujitsu x band amplifiers
Q1150
fujitsu gaas fet
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PDF
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FLL105
Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ
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FLL300-1
FLL200-1
FLL300-2
FLL200-3
FLL200-2
FLL120
FLL105
FLL300-3
FLU35
FLL55
FLL105
FLL101
fll171
"FLL105"
FLL-300-1
FLK202
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PDF
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FSX017LG/001-E1
Abstract: FSX017LG
Text: FSXOl 7LG G en eral Purpose Ga As F E i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS -5 V Total Power Dissipation Ptot 220 mW Storage Temperature Tstg -65 to +175
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2000Q.
FSX017LG/001-E1
FSX017LG
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