Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FUJI IGBT TENTATIVE Search Results

    FUJI IGBT TENTATIVE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    FUJI IGBT TENTATIVE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Target Specification TENTATIVE (450A/1200V-6in1 IGBT Module) IGBT Module This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any


    Original     		PDF 50A/1200V-6in1 6MBI450U-120 MT5F12331 May-10- H04-004-03

    Untitled

    Abstract: No abstract text available
    Text: Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI450UE-120 Target specification 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit Jun 19 ’02 Y.Kobayashi Jun 19 ’02 S.Miyashita REVISIONS T.Miyasaka


    Original     		PDF 2MBI450UE-120 MT5F12399 200V/450A

    Untitled

    Abstract: No abstract text available
    Text: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI200UC-120 Target specification 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit July 9 ‘02 July 9 ‘02 REVISIONS T.Satou S.Miyashita T.Miyasaka


    Original     		PDF 2MBI200UC-120 MT5F12446 200V/200A /-15V

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION Tentative target Device Name : IGBT MODULE Type Name : 1MBI600UB-120 Spec. No. : Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 6 ‘03 S.Miyashita T.Miyasaka MT5F 14049 1 3 H04-004-07 1MBI600UB-120 Target specification (Tentative) 1. Outline Drawing ( Unit : mm )


    Original     		PDF 1MBI600UB-120 H04-004-07 1MBI600UB-120 H04-004-03

    HEP230

    Abstract: 2MBI600UE-060 7MBR50UA060 6mbi60 7MBR75UB060 2MBI300UB-060 7MBR30UA060 2MBI400UB-060 fuji transistor modules fuji bipolar transistor
    Text: T-series and U-series IGBT Modules 600 V Seiji Momota Syuuji Miyashita Hiroki Wakimoto 110 2. T-series IGBT Modules 2.1 Features and challenges of T-series IGBT modules The cell structure of an NPT-type IGBT and the unit cell of PT (punch-through)-type device are shown


    Original     		PDF

    IGBT cross reference semikron eupec

    Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40

    IGBT cross reference semikron eupec

    Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40

    Untitled

    Abstract: No abstract text available
    Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any


    Original     		PDF 00A/1200V-2in1 MT5F16506 2MBI800U4G-120 14-Jul-05 H04-004-007 H04-004-003

    2MBI1200U4G-120

    Abstract: ED-4701 MT5F12959
    Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any


    Original     		PDF 14-Jul-05 200A/1200V-2in1 2MBI1200U4G-120 MT5F16507 H04-004-007 H04-004-003 2MBI1200U4G-120 ED-4701 MT5F12959

    MT5F12959

    Abstract: MT5F ic60
    Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any


    Original     		PDF 00A/1200V-2in1 MT5F16505 2MBI600U4G-120 14-Jul-05 H04-004-007 H04-004-003 MT5F12959 MT5F ic60

    Untitled

    Abstract: No abstract text available
    Text: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without


    Original     		PDF 50A/1700V-6in1 6MBI450U-170 MT5F12546 H04-004-003

    Untitled

    Abstract: No abstract text available
    Text: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without


    Original     		PDF 00A/1700V-6in1 6MBI300U-170 MT5F12711 H04-004-003

    fuji igbt

    Abstract: 4MBI150T-060 AE 04 equivalent
    Text: a Changed the equivalent circuit Oct-24-’02 S.O, T,M 3 4 DATE REVISIONS MA4LE 18 5 6 NAME DRAWN Sep.-26-’02 S.Ogawa CHECKED Sep.-26-’02 S.Miyashita T.Miyasaka DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,


    Original     		PDF Oct-24- 4MBI150T-060 fuji igbt 4MBI150T-060 AE 04 equivalent

    2MBI75UA-120

    Abstract: No abstract text available
    Text: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2 M B I7 5 U A - 1 2 0 Target specification This material and the information herein is the property of Fuji Slecmc Co .Ltd.They shall be neither reproduced, copied


    OCR Scan     		PDF 2MBI75UA-120 MT5F12226 200V/75A MT5F12226 2MBI75UA-120

    WT6M

    Abstract: 25CC
    Text: S P E C 1 F 1 C A T 1 ON TENTATIVE -2 JZ c E ï* 5 — » Product Name :* Type Name : Spec. No. : IGBT Module (Power Integrated Module) I M B R I 0 P E 1 2 0 MT6M1918 O " Eç t ï - £ S? »_ o ~ C V î? J7 25 le! * i*i§ * -SU 5 g ô u n i çï?r *,•


    OCR Scan     		PDF TMBR10PE120 WT6M1918 MT6M1918 WT6M 25CC

    7MBR25PE120

    Abstract: No abstract text available
    Text: S P E C I F I C A T I ON TENTATIVE Product Name : 1GBT Module (Power Integrated Module) 7 M B R 2 Type Name li n M T6 M I8 1 7 Spec. No. - 5=1 his! -j ï I - 5 P E 1 20 11 ! f| H | 5 i -I P I ! E 3 o |-*|ï 'Itj? |3l1f i2 SE i-5 l- sa ¿ u n Fuji Electric Co.,Ltd. (Matsumoto Factory)


    OCR Scan     		PDF 7MBR25PE120 MT6M1817 7MBR25PE120

    TH50

    Abstract: fuji igbt tentative
    Text: S P E C I F I C A T I ON TENTATIVE Product Name : T M B R 1 5 P E l l l Type Name This m a le iia l nod (he inform ation heicn is llu; p io p c i ty of Fu|i £ Ite Inc Co.Lid They shüll ht* neither lepiuduted co p im i lent 01 disclosed in any way w h a ts o e v e i loi the usi; ol a n y


    OCR Scan     		PDF TMBR15PE120 MT6M1816 TH50 fuji igbt tentative

    6MBR10PD120

    Abstract: No abstract text available
    Text: S P E C I F I C A T I ON TENTATIVE This m d lenii! and the mio»m.iiion hei fin is the proper ly of Fu|i Electric Co I id They shall be neither reproduced, copied leni or disclosed in any way whatsoever for the use of any thud i*ii* ly nor used for the manufac tin my pu»poses without


    OCR Scan     		PDF 6MBR10PD120 MT6M1815 MT6M1815 6MBR10PD120

    Untitled

    Abstract: No abstract text available
    Text: Fuji H itachi Pow er S em iconductor Co.,Ltd IG B T D evelopm ent Dept. Section M12 <TENTATIVE> This material and the information herein is the property of Fuji Electnc Co .Ltd They shall be neither reproduced, copied, lent, or disclosed In any way whatsoever for the use of any


    OCR Scan     		PDF T5F12DRAWN MT5F12223

    2MBI150UA-120

    Abstract: No abstract text available
    Text: Fuji Hitachi Power Semiconductor Co., Ltd IG B T Developm ent Dept. Section M12 <TENTATIVE> 2 M B I1 5 0 U A -1 2 0 Target specification This material and ihe Information herein is the property of Fuji Electnc Co .ltd They shall be neither reproduced, copied,


    OCR Scan     		PDF 2MBI150UA-120 MT5F12221 200V/150A 2MBI150UA-120

    Untitled

    Abstract: No abstract text available
    Text: Fuji Hitachi Power Semiconductor Co.,Ltd IG BT Development Dept. Section M12 <TENTATIVE> U -series 2 M B I3 0 0 U C -1 2 0 Target specification 1. Outline Drawing ( Unit : mm ) 28 ;o 2 21 ¡o 2 Mounting hole This material and the Information herein is the properly of


    OCR Scan     		PDF 5F12222

    diode T325

    Abstract: 2MBI150J-060 JZ 1-1A fuji IGBT
    Text: i Ratings and characteristics of Fuji M B I 1 5 0 J T — IG B T 6 MBT Module (TENTATIVE) 1. Ou 11 ine Drawing Unit : mm * Isolation Voltage : AC 2500 V 1 ninute °í I : llí: U s - ìé t 2* â ë lili uni -iülï i n s 1|! jjjsl M UJ -O ÉÉJI Tab type terminals


    OCR Scan     		PDF

    2MBI200UB-120

    Abstract: No abstract text available
    Text: Fuji Hitachi P ow er S em iconductor Co., Ltd IG B T D evelopm ent D ept. S ection M12 <TENTATIVE> U-series 2M B I200U B -120 Target specification 1. Outline Drawing ( Unit : mm ) E2. Cl consent of Fuji Electric Co. L td . CÆ 1 2 3 = 0 2 40 -0 2 TUB TYPE TERMINALS


    OCR Scan     		PDF 2MBI200UB-120 MT5F12209 2MBI200UB-120

    Untitled

    Abstract: No abstract text available
    Text: Ratings and characteristics of Fuji I G B T M B T 2 M B I Y 5 — 6 Module (TENTATIVE) 1. Outline Drawing Unit : BB * Isolation ; UJ Voltage : AC 2500 V 1 lim ite Tab type terminals (AMP No.110 equivalent) 9 3 -M 5 DATE CHECKED < 7o,V\ bflE _ I APPROVED


    OCR Scan     		PDF MT5F4995 MT5F4905 EE3A71B 000E7E1