FETEX-150
Abstract: biosensor Palm Vein Technology WX300 "CMOS GATE ARRAY" fuji graphene SHINKO pharma suite riken fujitsu optical module
Text: Corporate Data History of Fujitsu ● Business 1935 ～ Developments ● Jun 20, 1935 Fuji Tsushinki Manufacturing Corporation, the company that later becomes Fujitsu Limited, is born as an offshoot of the communications division of Fuji Electric. The new company is
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C-Band Power GaAs FET HEMT Chips
Abstract: fujitsu gaas fet GaAs FET HEMT Chips fujitsu hemt
Text: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate Drain Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for
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FLC307XP
FLC307XP
FCSI0598M200
C-Band Power GaAs FET HEMT Chips
fujitsu gaas fet
GaAs FET HEMT Chips
fujitsu hemt
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fhc40lg
Abstract: 18GHZ LG 932 fujitsu hemt
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHC40LG
FH40LG
2-12GHz
FCSI0598M200
fhc40lg
18GHZ
LG 932
fujitsu hemt
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FHX13X
Abstract: FHX13 FHX14X fujitsu hemt RF POWER TRANSISTOR C 10-12 GHZ chip
Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor
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FHX13X,
FHX14X
12GHz
FHX13)
FHX14X
2-18GHz
FCSI0598M200
FHX13X
FHX13
fujitsu hemt
RF POWER TRANSISTOR C 10-12 GHZ chip
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FUJITSU XBAND
Abstract: No abstract text available
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION The FLX257XV chip is a power GaAs FET that is
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FLX257XV
FLX257XV
FCSI0598M200
FUJITSU XBAND
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fujitsu gaas fet
Abstract: FLC307XP C-Band Power GaAs FET HEMT Chips
Text: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate Drain Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for
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FLC307XP
FLC307XP
FCSI0598M200
fujitsu gaas fet
C-Band Power GaAs FET HEMT Chips
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FHR20X
Abstract: GaAs FET HEMT Chips 0840 057 TM 1628
Text: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg ≤ 0.15µm, Wg = 100µm Gold Gate Metallization for High Reliability DESCRIPTION The FHR20X is a Super High Electron Mobility Transistor
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FHR20X
18GHz
FHR20X
2-30GHz
FCSI0598M200
GaAs FET HEMT Chips
0840 057
TM 1628
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Untitled
Abstract: No abstract text available
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
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FHX45X
12GHz
FHX45X
2-18GHz
FCSI0598M200
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Low Noise HEMT
Abstract: Super low noise figure and high associated gain
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHC40LG
FH40LG
2-12GHz
FCSI0598M200
Low Noise HEMT
Super low noise figure and high associated gain
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FSX017X
Abstract: fujitsu hemt GaAs FET HEMT Chips
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
FCSI0598M200
fujitsu hemt
GaAs FET HEMT Chips
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FSX017X
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
FCSI0598M200
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transistor 1345
Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)
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FHR02X
18GHz
FHX02X
4-22GHz
FCSI0598M200
transistor 1345
FHR02X
GaAs FET HEMT Chips
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Untitled
Abstract: No abstract text available
Text: FLX257XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G -j^B = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability &Bp|B|^Bp|B|^B P|B|^|b P|b P|B DESCRIPTION The FLX257XV chip is a pow er GaAs FET that is
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FLX257XV
FLX257XV
FCSI0598M200
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FLC30
Abstract: FLC307XP fujitsu gaas fet fujitsu hemt
Text: FLC307XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r]add = 37%(Typ.) Proven Reliability DESCRIPTION
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FLC307XP
FLC307XP
FCSI0598M200
FLC30
fujitsu gaas fet
fujitsu hemt
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fujitsu hemt
Abstract: FHX04 FHX04LG 4232 gm CQ 527
Text: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg s 0.25|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG/LP,
05LG/LP,
06LG/LP
12GHz
FHX04)
FHX05LG/LP,
FHX06LG/LP
2-18GHz
fujitsu hemt
FHX04
FHX04LG
4232 gm
CQ 527
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fujitsu hemt
Abstract: fujitsu gaas fet FSX017X GaAs FET HEMT Chips
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: PidB=21.5dBm Typ. @8.0GHz • High Power Gain: G-|dB=11dB(Typ.)@8.0GHz • Proven Reliability DESCRIPTION The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
FCSI0598M200
fujitsu hemt
fujitsu gaas fet
GaAs FET HEMT Chips
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FHX13LP
Abstract: FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt
Text: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG/LP,
14LG/LP
12GHz
FHX13)
2-18GHz
FCSI0598M200
FHX13LP
FHX14LP
transistor fhx 35 lp
FHX13LG
FHX13
fujitsu hemt
FHX14LG
Z150
low noise hemt transistor
low noise hemt
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Untitled
Abstract: No abstract text available
Text: FLC087XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r i ^ d = 31.5%(Typ.) Proven Reliability DESCRIPTION
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FLC087XP
FLC087XP
FCSI0598M200
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FLK017XP
Abstract: GaAs FET HEMT Chips
Text: FLK017XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 26%(Typ.) Proven Reliability DESCRIPTION
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FLK017XP
FLK017XP
FCSI0598M200
GaAs FET HEMT Chips
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FHX35LG
Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
Text: FHX35LG/LP -FEATURES • • • • • Super Low Noise HEMT Low Noise Figure: 1.2B Typ. @ f=12G Hz High A ssociated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold Gate M etallization for High Reliability
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12GHz
FHX35LG/LP
2-18GHz
FHX35LG/LP
FCSI0598M200
FHX35LG
FHX35LP
low noise hemt
fujitsu hemt
1 987 280 103
FHX35
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12QHz
Abstract: FSX027X GaAs FET HEMT Chips fujitsu gaas fet
Text: FSX027X - GaAs FET & HEMT Chips FEATURES • Medium Power Output: P-|dB=24.5dBm Typ. @8.0GHz • High Power Gain: GidB=10dB(Typ.)@ 8.0GHz • Proven Reliability DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium
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FSX027X
FSX027X
12GHz.
FCSI0598M200
12QHz
GaAs FET HEMT Chips
fujitsu gaas fet
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FLK107XV
Abstract: tc 5082
Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability DESCRIPTION The FLK107XV chip is a pow er G aAs FET that is designed for general purpose applications in the Ku-Band
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FLK107XV
FLK107XV
FCSI0598M200
tc 5082
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Untitled
Abstract: No abstract text available
Text: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability
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FHR20X
18GHz
FHR20X
2-30GHz
FCSI0598M200
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fujitsu hemt
Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Text: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability
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FH40LG
2-12GHz
FHC40LG
FCSI0598M200
fujitsu hemt
fujitsu transistor HEMT
fhc40lg
280AM
low noise hemt
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