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    FUJITSU RF POWER AMPLIFIER L BAND Search Results

    FUJITSU RF POWER AMPLIFIER L BAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    FUJITSU RF POWER AMPLIFIER L BAND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GSC371BAL2000

    Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
    Text: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band


    Original     		PDF 1930MHz FLL400IP-2 1930-1990MHz 720mA 96GHz GSC371BAL2000 Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power
    Text: FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 8W Average Pout • Easy tuning for Power, WCDMA ACPR and IMD • Over 80 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL800IQ-2C Descriptio10 220mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 understanding thermal basics for microwave power

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
    Text: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL600IQ-2C 151mA FUJITSU MICROWAVE TRANSISTOR 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
    Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band


    Original     		PDF FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz

    MB15H156

    Abstract: XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent
    Text: January 2005 MB15H156 RTS v1.51.doc Reference Target Specification Fully Integrated GPS RF Downconverter MB15H156 GENERAL DESCRIPTION The MB15H156 GIRAFE GPS Integrated Radio Analog Front End implements a LNA, an image-reject mixer with a RF-AMP, a band pass filter, an AGC, and a fully


    Original     		PDF MB15H156 MB15H156 564MHz, 456MHz LCC-32P-M08) LCC-32P-M08 -110dBm 456MHz) 128MHz) XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
    Text: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD


    Original     		PDF IMT2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
    Text: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B push pull class AB RF linear L band stub tuner matching

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    converter dc-dc 24v to 12v tl494

    Abstract: MB39A134/MB39A132A MB39A136
    Text: FUJITSU SEMICONDUCTOR LIMITED Power Management ICs Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America


    Original     		PDF LQFP48 TSSOP28 TSSOP24 QFN32 WL-CSP49 SON10 WL-CSP20 converter dc-dc 24v to 12v tl494 MB39A134/MB39A132A MB39A136

    4G base station power amplifier

    Abstract: MB86K71 BWX8350 mobile wimax 802.16e cpe wimax MB86K21 wimax base station adaptive beamforming cisco beamforming antenna 4g
    Text: W i M A X F a l l W o r l d 2 0 0 8 The News on the Latest Semiconductor Technologies and Products from Fujitsu Microelectronics America, Inc. Fujitsu Demonstrates Latest WiMAX Technology with Cisco Base Station Fujitsu will demonstrate Cisco’s BWX8350 WiMAX base station and the Fujitsu CPE. The demonstration will


    Original     		PDF BWX8350 CORL-NL-21333-9/2008 4G base station power amplifier MB86K71 mobile wimax 802.16e cpe wimax MB86K21 wimax base station adaptive beamforming cisco beamforming antenna 4g

    s29gl032n90

    Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
    Text: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,


    Original     		PDF covPG00-00071e PG00-00071-2E s29gl032n90 MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11

    MB39C326

    Abstract: WLP 1500
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS405-00001-1v0-E ASSP for Power Supply Applications 6MHz Synchronous Rectification Buck-Boost DC/DC Converter IC MB39C326  DESCRIPTION The MB39C326 is a high efficiency, low noise synchronous, Buck-boost DC/DC converter designed for


    Original     		PDF DS405-00001-1v0-E MB39C326 MB39C326 1200mA WLP 1500

    data acquisation system

    Abstract: MB87L2250 DVB demodulator MB87J217A "channel estimation"
    Text: Product Data Sheet February 2001 Edition 1.0 MB87J217A DVB Terrestrial COFDM Demodulator OVERVIEW The MB87J217A is Fujitsu’s second generation DVB-T ETS / EN 300 744 compliant integrated COFDM Demodulator and Forward-Error-Corrector. Fujitsu, a leading company in CMOS


    Original     		PDF MB87J217A MB87J217A data acquisation system MB87L2250 DVB demodulator "channel estimation"

    Untitled

    Abstract: No abstract text available
    Text: FMM5512ZE 800MHz Band GaAs Power Amplifier MMIC DESCRIPTION The FMM5512ZE contains a two-stage amplifier that is designed for AMPS applications in the 824 to 849MHz frequency range. This product is well suited for applications where high power, high efficiency, low noise power, and single power supply are required.


    OCR Scan     		PDF FMM5512ZE 800MHz FMM5512ZE 849MHz SSOP-16 FCSI0597M200

    fujitsu mmic ic

    Abstract: k BAND LOW PHASE gaAs FET
    Text: FMM5509ZE 800MHz Band GaAs Power Amplifier MMIC DESCRIPTION The FMM5509ZE contains a two-stage amplifier that is designed for AMPS applications in the 824 to 849MHz frequency range. This product is well suited for applications where high power, high efficiency, low noise power, and single power supply are


    OCR Scan     		PDF FMM5509ZE 800MHz FMM5509ZE 849MHz SSOP-16 FCSI0598M200 fujitsu mmic ic k BAND LOW PHASE gaAs FET

    OB 2269

    Abstract: Gigabit Logic 16G071-10L1E hn 834 Fujitsu APD plcs 1530 16G071-10L1 GIGABIT LOGIC INC "gigabit logic" 16G071-10X
    Text: Ig b lï G ig aB it Logic 16G071 Transimpedance Amplifier 18 dB Gain / 700 MHz Bandwidth FEATURES •High gain > 18 dB • Broad Bandwith: DC to 700 MHz typ. ■Low noise: 3 pAA/Hz typ. for 16G071-30L1 • -35.3 dBm input sensitivity for 10'9 BER @ 1.2 Gbit/s


    OCR Scan     		PDF 16G071 16G071-30L1 16G071 OB 2269 Gigabit Logic 16G071-10L1E hn 834 Fujitsu APD plcs 1530 16G071-10L1 GIGABIT LOGIC INC "gigabit logic" 16G071-10X

    KT 829 b

    Abstract: FPD1 808 nm 1000 mw 2 pins KT 829
    Text: T E K T R O N I X INC/ TRI ÛUI NT 2 bE » E3 B*ïDb23.a O O D D S b l 3 Q T R Û O M !L Î G ig a B it L o g ic 16G071 Transimpedance Amplifier 18 dB Gain / 700 MHz Bandwidth FEATURES 1High gain > 18 dB 1Broad Bandwith: DC to 700 MHz typ. >Low noise: 3 pA//Hz typ. for 16G071-30L1


    OCR Scan     		PDF 16G071 16G071-30L1 16G071 050P3 0080TOP KT 829 b FPD1 808 nm 1000 mw 2 pins KT 829

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70104-3E Semicustom Bi-CMOS ASTRO MASTER IV Specification for PLL frequency synthesizers MB1570 Series • DESCRIPTION The ASTRO MASTER IV is a master-slice type semi-custom LSI ideal for use in high-frequency front-end circuits


    OCR Scan     		PDF DS06-70104-3E MB1570

    sampa

    Abstract: AY-3-0214 top octave generator ic
    Text: FU J I TS U M I C R O E L E C T R O N I C S 374^2 47E D M ay 1991 Edition 1.0 DATA S H E E T : 0 0 1 Ô 37 1 S « F H I _ FUJITSU MB86460A MODEM WITH INTERNAL VOICE-BAND FILTERS CMOS MODEM CIRCUIT WITH INTERNAL VOICE-BAND FILTERS FOR CORDLESS TELEPHONES The MB86460 MSK Minimum Shift Keying modem IC contains a 1200-band MSK


    OCR Scan     		PDF MB86460A MB86460 1200-band 48-LEAD FPT-48-M02) sampa AY-3-0214 top octave generator ic

    Untitled

    Abstract: No abstract text available
    Text: FMM5522GJ VSATMMIC FEATURES • • • • • • High Output Power: P-|<jB = 35.0dBm Typ. High Gain: G-ih r = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION


    OCR Scan     		PDF FMM5522GJ FMM5522GJ FCSI0599M200

    Untitled

    Abstract: No abstract text available
    Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1


    OCR Scan     		PDF FMM5804X FCSI0599M200

    ti75b

    Abstract: MB1540 MB1550 MB1520
    Text: Sept. 1995 Edition 3.0b DATA SH EET FUJITSU MB1520/MB1530/MB1540/MB1550 SERIES Bi-CMOS LSI RF 1C SPECIFICATION ADVANCED SEMICUSTOM TECHNOLOGY OF SUPER PLL WITH RF SYSTEM ON LSI The Fujitsu MB1520/1530/1540/1550 series are semicustom LSI IC's based on a master slice method. Super P LL P LL and Prescaler macros and high frequency


    OCR Scan     		PDF MB1520/MB1530/MB1540/MB1550 MB1520/1530/1540/1550 ti75b MB1540 MB1550 MB1520

    16G072-10X

    Abstract: 16G072-10X1 16G072-20X 16G072-20X1 16G072-30X 16G072-30X1 Gigabit Logic
    Text: le a ? 16G072 G i g a B i t L o g ic Transimpedance Amplifier 30 dB Gain / 600 MHz Bandwidth FEATURES • Low output impedance •Stable operation ■Three choices of integrated feedback resistance: 10, 20, and 30 K il ■High gain: 30 dB ■Broad Bandwidth: DC to 600 MHz typ.


    OCR Scan     		PDF 16G072 16G072 from10, 16G072-10X 16G072-10X1 16G072-20X 16G072-20X1 16G072-30X 16G072-30X1 Gigabit Logic