MSM photodetector
Abstract: GaAs MSM Ultrafast Photodetectors GMbh G4176 G4176-01 G7096 G7096-01 LPRD1022E01
Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs , G7096 SERIES (InGaAs) CONNECTION EXAMPLES G4176 G4176-01 G7096 G7096-01 PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Output Optical Input Electric Output G4176 (G7096)
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G4176
G7096
G4176
G7096
G4176-01
G7096-01
G7096)
MSM photodetector
GaAs MSM
Ultrafast Photodetectors GMbh
G4176-01
G7096-01
LPRD1022E01
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Ultrafast Photodetectors GMbh
Abstract: GaAs MSM MSM photodetector photodetector 850 nm G4176 G4176-01 G4176-02 LPRD1014E03 ultrafast photodetectors
Text: ULTRAFAST GaAs MSM PHOTODETECTORS G4176 SERIES Figure 1: Optical Pulse Response ULTRAFAST GaAs MSM PHOTODETECTORS G4176 SERIES Figure 2: Spectral Response Including time response of light source, bias-tee and oscilloscope (VB=7V) (VB=7V) 100 OUTPUT RADIANT SENSITIVITY (A/W)
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G4176
G4176)
G4176
G4176-01
G4176-02
G4176-SE
1/4-36UNS-2B
Ultrafast Photodetectors GMbh
GaAs MSM
MSM photodetector
photodetector 850 nm
G4176-01
G4176-02
LPRD1014E03
ultrafast
photodetectors
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Ultrafast Photodetectors GmbH
Abstract: G7096-03
Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps*1(Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)
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G4176
G7096
G4176-03
G7096-03
G4176-03
G4176-01
G7096-01
Ultrafast Photodetectors GmbH
G7096-03
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G4176-03
Abstract: MSM photodetector G417603 Ultrafast Photodetectors GMbh GaAs MSM G4176 G4176-01 G7096 G7096-01 photodetectors
Text: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)
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G4176
G7096
G4176-03
G7096-03
G4176-01
G7096-01
G4176-03
MSM photodetector
G417603
Ultrafast Photodetectors GMbh
GaAs MSM
G4176-01
G7096-01
photodetectors
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photodetector 850 nm
Abstract: G417603 Ultrafast Photodetectors GmbH G4176-03
Text: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)
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G4176
G7096
G4176-03
G7096-03
G4176-03
G4176-01
G7096-01
photodetector 850 nm
G417603
Ultrafast Photodetectors GmbH
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)
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G4176
G7096
G4176-03
G7096-03
G4176-01
G7096-01
G4176-03
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Untitled
Abstract: No abstract text available
Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 tr , tf = 30 ps (Typ.) Low dark current 100 pA (Ta=25 °C) Large photosensitive area 200 mm *1: Values excluding response time of light source, bias tee, assembly circuit,
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G4176
G4176-03
G4176-01
G4176-03
SE-164
LPRD1022E05
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amplify CV 203
Abstract: startac nec d 882 p transistor general instrument lnb Motorola Microwave power Transistor Motorola StarTac komatsu 521 PIN PHOTODIODE of wavelength 340 nanometer ericsson 3G training OC-24
Text: RF communication solutions for wireless and broadband / 1999 Annual Report Our Markets Company Profile ANADIGICS, Inc. is a leading supplier of radio frequency “RF” /microwave integrated circuit (“RFIC”) solutions for the rapidly growing communications industry. Our products are used to transmit and receive
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Motorola Microwave power Transistor
Abstract: philips LED AlGaAs LM 4088 InP HBT transistor waveguide amplifier mesfet lnb OC-24 OC-768 gallium phosphide band structure GSM band selective repeater ka band gaas MESfet
Text: 2000 ANNUAL REPORT innovation T H R fpo O U G H N fpo E W T E C fpo H N O L O G fpo Y COMPANY PROFILE ANADIGICS, Inc. is a leading supplier of radio frequency integrated circuit RFIC solutions for the rapidly growing communications industry. The Company’s products are used to transmit,
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AMT8302
Abstract: AMT8302T56F tia amplifier ghz
Text: AMT8302 2.125 Gb/s Integrated 850nm MSM-TIA Preliminary Data Sheet - Rev 0 FEATURES • Differential Output TIA · 3.3V Operation · Automatic Gain Control · Integrated 850nm MSM Detector & TIA · TO-56 Ultra Flat-Window Hermetic Package · High Reliability
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AMT8302
850nm
AMT8302
AMT8302T56F
tia amplifier ghz
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AMT8301
Abstract: AMT8301T46F AMT8301T46L T46F ASE noise filter MSM photodetector
Text: AMT8301 2.125 Gb/s Integrated 850nm MSM-TIA Data Sheet - Rev 0 FEATURES • Differential Output TIA · 3.3V Operation · Automatic Gain Control · Integrated 850nm MSM Detector & TIA · TO-46 Ultra Flat-Window or Lens Hermetic Package · High Reliability APPLICATIONS
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AMT8301
850nm
AMT8301
AMT8301T46F
AMT8301T46L
T46F
ASE noise filter
MSM photodetector
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AMT128502A
Abstract: AMT128502AT46F T46F GaAs MSM
Text: AMT128502A 1.25 Gb/s Integrated 850 nm MSM-TIA Data sheet - Rev. 0 FEATURES • 1.25 Gb/s Differential Output TIA · 5V Operation · Automatic Gain Control · 850nm Photodetector with 100 mm x 100 mm Active Area · Integrated MSM detector & TIA · TO-46 Ultra Flat Window
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AMT128502A
850nm
250Gb/s)
AMT128502A
AMT128502AT46F
T46F
GaAs MSM
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MSM photodetector
Abstract: AMT8100 AMT8100T46L dth receiver board
Text: AMT8100 1.25 Gb/s Integrated 850 nm MSM-TIA Data Sheet - Rev1 FEATURES • 1.25 Gb/s Differential Output TIA · 5.0V Operation · Automatic Gain Control · 850nm Photodetector with 100 mm2 Active Area · Integrated MSM Detector & TIA · TO46 Lens Package APPLICATIONS
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AMT8100
850nm
O-46L
AMT8100
MSM photodetector
AMT8100T46L
dth receiver board
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SIEMENS MICROWAVE RADIO
Abstract: mesfet lnb raytheon downconverter Ericsson microwave commissioning ESP car stability LED light chase raytheon dbs Nortel Networks Power Amplifier MMIC 2.6 GHz 10 gb laser diode
Text: RFIC Solutions for Broadband and Wireless Communications 010101010101101\\
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laser coupler
Abstract: AMT8301 AMT8301T46F AMT8301T46L T46F
Text: AMT8301 2.125 Gb/s Integrated 850nm MSM-TIA Data Sheet - Rev 2.1 FEATURES • · · · · Differential Output TIA 3.3V Operation Automatic Gain Control Integrated 850nm MSM Detector & TIA TO-46 Ultra Flat-Window or Lens Hermetic Package · High Reliability
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AMT8301
850nm
AMT8301
laser coupler
AMT8301T46F
AMT8301T46L
T46F
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TO56 package
Abstract: GaAs MSM TO56 AMT8302 AMT8302T56F 6 Pin TO56
Text: AMT8302 2.125 Gb/s Integrated 850nm MSM-TIA PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • • • • • • Differential Output TIA 3.3 V Operation Automatic Gain Control Integrated 850nm MSM Detector & TIA TO-56 Ultra Flat-Window Hermetic Package High Reliability
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AMT8302
850nm
AMT8302
TO56 package
GaAs MSM
TO56
AMT8302T56F
6 Pin TO56
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68EC000
Abstract: motorola coldfire family of integrated processors M32R macros in embedded computing Capital Relations Mitsubishi Semiconductor America MITSUBISHI GATE ARRAY
Text: Editorial Contacts: Mitsubishi Electronics America, Inc. Sherry Hill 408-774-3188 shill@msm.mea.com Motorola Sue Cozart 512-891-2134 rxdg10@email.sps.mot.com The Horn Group Kathleen O'Boyle/Susan Rozmanith 415-579-6400 koboyle@horngoup.com srozmanith@horngroup.com
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rxdg10
68EC000
motorola coldfire family of integrated processors
M32R
macros in embedded computing
Capital Relations
Mitsubishi Semiconductor America
MITSUBISHI GATE ARRAY
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BLM41A01
Abstract: AMT128502T46F AMT128502T46L AWT906S6 SSOP-28 AWT906
Text: E @ n w ig ig AWT906S6 TX POWER MMIC Advacnec Product Information Rev 0 900 MHz Band AMPS GaAs Power Amplifier 1C DESCRIPTION TheAWT906 is a monolithic power amplifier suited for AMPS cellular telephone applications. FEATURES High Output Power High Efficiency
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AWT906S6
TheAWT906
AMT128502T46F/T46L
0GQ1275
BLM41A01
AMT128502T46F
AMT128502T46L
SSOP-28
AWT906
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Untitled
Abstract: No abstract text available
Text: Æfacm M a n A M P com pany GaAs DPDT Switch DC - 2 GHz MASW2040 V 2.00 • • • • • RFA1 Cascadable Low Insertion Loss Low DC Power Consumption Low' Distortion Operation Quiet Mode I'seful as a Building Block for - Digital Digital Digital Digital
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MASW2040
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Untitled
Abstract: No abstract text available
Text: GaAs 1C 5 Bit Digital Attenuator 1 dB LSB Positive Control 0.5-2 GHz EHAlpha AA101-80 Features SSOP-16 • Attenuation 1 dB Steps to 31 dB with High Accuracy -0 .1 9 7 5.00 mm 0.189 (4.80 mm) 0.025 (0.635 mm) TYP. ■ Single Positive Control (+3 to +5 V) for
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AA101-80
SSOP-16
SSOP-16
AA101
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C 5 Bit Digital Attenuator 0.5 dB LSB Positive Control 0.5-2 GHz ESAlpha AA102-80 F eat ur e s • Attenuation 0.5 dB Steps to 15.5 dB with High Accuracy SSOP-16 -0 .1 9 7 5.00 mm 0.189 (4.80 mm) 0.025 (0.635 mm) TYP. ■ Single Positive Control for Each Bit
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AA102-80
SSOP-16
SSOP-16
AA102-80
3/99A
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NE67383
Abstract: No abstract text available
Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1
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NE33200
NE67300
NE71300
NE76000
NE76100
NE76083A
NE33284A
NE25118
NE25139
NE25339
NE67383
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Untitled
Abstract: No abstract text available
Text: k : s ie in n i k . msmm DISCONTINUED Product Description SSW-308 DC-3 GHz Low Cost G aAs MMIC SPDT Switch This single-pole, double-throw, reflective switch consumes less than 40uA and operates with 0V/-5V control voltages. This switch can be used in both analog and digital wireless
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SSW-308
28dBm.
01BPL4
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