B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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2SK879
Abstract: a63m
Text: TO SH IBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 2.1 ±0.1 1.25 ± 0.1 • • • High Breakdown Voltage : V q d § = —50V High Input Impedance : lQ gg= —l.OnA Max. (VQg= —30V)
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2SK879
120Hz)
SC-70
2SK879
a63m
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3SK260
Abstract: EE 45 bobbin
Text: TO SH IBA 3SK260 TOSHIBA FIELD EFFECT TRANSISTOR TV TUNER VHF MIXER APPLICATIONS SILICON N CHANNEL DUAL GATE MOS TYPE 3SK260 VHF RF AMPLIFIER APPLICATIONS • • High Conversion Gain : GGg = 24.5dB Typ. Low Noise Figure : NFGg = 3.3dB (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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3SK260
3SK260
EE 45 bobbin
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS High Breakdown Voltage : Vj gg= —180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)
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2SJ338
--180V
2SK2162
--10mA,
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2SK2467-Y
Abstract: No abstract text available
Text: T O S H IB A 2SK2467-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2467-Y HIGH POWER AMPLIFIER APPLICATION • • Unit in mm 02.6 + 0.2 15.8 + 0.5 High Breakdown Voltage : Vj gg = 180V 3.5 JiK. High Forward Transfer Admittance : |Yfs| = 4.0S Typ.)
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2SK2467-Y
2SK2467-Y
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toshiba lot number type
Abstract: 2f3 transistor 2SJ440-Y 2-16F1B 2SJ440 Toshiba 2SJ
Text: T O S H IB A 2SJ440-Y 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V]}gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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2SJ440-Y
toshiba lot number type
2f3 transistor
2SJ440-Y
2-16F1B
2SJ440
Toshiba 2SJ
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC S5E D • blllSHT GG0334G 7bl ■ MRN piCZRON 64K MT5C6401 X 1 SRAM - 'T 4 C 7 - 2 .V O S T SRAM 64K X 1 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply
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OCR Scan
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GG0334G
MT5C6401
22-Pin
000334b
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PDF
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2SK1530
Abstract: 2SJ201
Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SJ201
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2SK1530
2SJ201
2SK1530
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PDF
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2SK1529
Abstract: toshiba 2Sj200
Text: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj gg= 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.)
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2SK1529
2SJ200
2SK1529
toshiba 2Sj200
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDU CTOR INC b?E D • b 1115 ^ GGOTMSfl 22b ■ MRN PRELIMINARY MT5LC256K4D4 REVOLUTIONARY PINOUT 256K x 4 SRAM SRAM 256K x 4 SRAM 3.3V OPERATION WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT PIN ASSIGNMENT Top View • All I/O pins are 5V tolerant
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OCR Scan
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MT5LC256K4D4
32-Pin
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PDF
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N2A-2
Abstract: RF1X D3/HS 2303
Text: SIEMENS ICs for Communications Dual 2GigaPLL PMB 2303 V1.0 Target Specification 4.95 fl23SbOS GG7fll07 314 PMB 2303 Revision History Previous Releases: Page 4.95 ♦ none Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible
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fl23SbOS
GG7fll07
P-TSSOP-20-1
fl235bOS
N2A-2
RF1X
D3/HS 2303
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2SK2718
Abstract: transistor 2sk2718
Text: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) • Low Leakage C urrent : lD gg = 100,6iA(Max.) (V]3 g = 720V)
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OCR Scan
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2SK2718
100//A
2SK2718
transistor 2sk2718
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PDF
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IC 4011
Abstract: 1N4376 282-C diode rectifier 1n 4001 1N4376 JAN Scans-0016000
Text: MIL SP ECS MME D • 0 0 G 0 12 S GGanSD 5 ■MILS I I I INCH-POUND I I_ 1 MIL-S-19500/282C 23 June 1992 SUPERSEDING MIL-S-19500/282B 31 January 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N4376 JAN AND JANTX
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000012S
MIL-S-19500/282C
MIL-S-19500/282B
1N4376
MIL-S-19500.
GG001Z5
MIL-S-19500/282C
IC 4011
282-C
diode rectifier 1n 4001
1N4376 JAN
Scans-0016000
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PDF
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TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-0710
TRANSISTOR SMD MARKING CODE 1BW
SmD TRANSISTOR 1bw
transistor SMD 5BW
TRANSISTOR SMD MARKING CODE 1AM
5bw smd
smd code marking 5bw
KL SN 102 94v-0
smd transistor marking 3bw
smd transistor 1AM
yx 801
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PDF
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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smcj bfk
Abstract: transzorb marking code GEM JESD22-B102 J-STD-002 SMCJ10 SMCJ10A SMCJ188CA GEZ VISHAY
Text: SMCJ5.0 thru SMCJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional
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SMCJ188CA
J-STD-020,
DO-214AB
2002/95/EC
2002/96/EC
smcj bfk
transzorb marking code GEM
JESD22-B102
J-STD-002
SMCJ10
SMCJ10A
SMCJ188CA
GEZ VISHAY
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PDF
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Untitled
Abstract: No abstract text available
Text: MI CR ON S E M I C O N D U C T O R INC b?E T> • b l l l S M ^ GGOTbSfl 3SG ■ MRN ADVANCE m i c r o n 32K X M T58LC 32K 36A 6 36 SY N C H R O N O U S SRAM 32K x 36 SRAM +3.3V SUPPLY, FULLY REGISTERED I/O AND LINEAR BURST COUNTER FEATURES • • • •
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OCR Scan
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T58LC
680X0
MT58LC32K36A6LG-10
64-bit
MT58LC32K36A6LG-7
MT56LC32K36A6
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • GG07b0S T7T ■ URN MT4C4256 L 256K X 4 DRAM MICRON 256K X 4 DRAM DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and
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GG07b0S
MT4C4256
512-cycle
MT4C4256)
175mW
MT4C4256L
200nA
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PDF
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Untitled
Abstract: No abstract text available
Text: b4E D • 7SR73bG RAYTHEON/ TMC2330 GGDfibOl 3 0 b « R T N SEMICONDUCTOR - TMC2330 CMOS Coordinate Transformer Description 16-bit user-selectable two's complement or sign-andmagnitude rectangular data formats Input register clock enables and asynchronous output
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OCR Scan
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7SR73bG
TMC2330
16-bit
120-pin
132-leaded
TMC2330
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PDF
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Untitled
Abstract: No abstract text available
Text: Central" semiconductor Corp. CMPT3019 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applica
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OCR Scan
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CMPT3019
OT-23
100mA,
13-November
OT-23
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PDF
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marking code 697
Abstract: No abstract text available
Text: Central" Semiconductor Corp. CZT4033 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT4033 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high cur rent general purpose amplifier applications.
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OCR Scan
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CZT4033
OT-223
CP705
14-November
OT-223
marking code 697
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PDF
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Untitled
Abstract: No abstract text available
Text: Central" Semiconductor Corp. CZT3019 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high cur rent general purpose amplifier applications.
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OCR Scan
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CZT3019
OT-223
CP305
26-September
OT-223
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PDF
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Untitled
Abstract: No abstract text available
Text: SMCG5.0 thru SMCG188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional
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SMCG188CA
DO-215AB
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
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PDF
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