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    GP200MHB12S Search Results

    GP200MHB12S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GP200MHB12S Mitel Semiconductor Powerline N-Channel IGBT Module Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.


    Original
    PDF GP200MHB12S DS4339-4 190ns 840ns

    AN5190

    Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
    Text: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ


    Original
    PDF GP200MHS12 GP200MHB12S DS4339-5 DS5296-1 GP200MHS12 AN5190 AN4502 AN4503 AN4508

    half bridge circuit diagram

    Abstract: lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams GP200MHB12S UPS circuit diagram
    Text: @ MITEL GP200MHB12S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4339 - 4.2 The GP200MHB12S is a single switch 1200V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the


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    PDF GP200MHB12S DS4339 GP200MHB12S half bridge circuit diagram lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams UPS circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESS EY S E M I C O N D U C T O R S DS4339-4.2 GP200MHB12S POWERUNE N-CHANNELIGBT MODULE APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers. TYPICAL KEY PARAMETERS v CES 1200V V* CE sat 2.8V 200A S conti


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    PDF DS4339-4 GP200MHB12S 190ns 840ns 44lbs 70lbs 88lbs 18lbs 1500g