Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B31C105KA92p 603, B, 1.0µF, 16Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging
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GRM188B31C105KA92p
16Vdc)
180mm
330mm
16Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B31C105KA92p 0603, B, 1.0µF, 16Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging
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GRM188B31C105KA92p
16Vdc)
180mm
330mm
16Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B31C105KA92p 0603, B, 1.0µF, 16Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging
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GRM188B31C105KA92p
16Vdc)
180mm
330mm
16Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors > Thin Layer Large Capacitance Type Data Sheet Monolithic Ceramic Capacitors GRM188B31C105KA92p 0603, B, 1.0µF, 16Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.60mm±0.10mm Code
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GRM188B31C105KA92p
16Vdc)
180mm
330mm
16Vdc
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Untitled
Abstract: No abstract text available
Text: Middle Power Class-D Speaker Amplifiers Analog Input / BTL Output Class-D Speaker Amplifier No.10075EBT04 BD5424EFS ●Description BD5424EFS is a 20W + 20W stereo class-D power amplifier IC, developed for space-saving and low heat-generation applications such as low-profile TV sets. The IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD process technology
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10075EBT04
BD5424EFS
BD5424EFS
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LQW18AN4R7NG00
Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0
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NE5550779A
LQW18AN4R7NG00
ATC100A6R8BW
ATC100A2R7JW
GRM188B31C105KA92
ATC100A120BW
MCR03J103
GQM1882C1H150JB01
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GRM21BR71A475KA73L
Abstract: GRM32ER71C226KE18L POWR607 smd 8A SCM40 lattice xp2 GRM188R11H104KA93 m1 smd transistor POWR1014A MPD6S022S
Text: 2008 MURATA PRODUCTS POWER SUPPLY REFERENCE GUIDE FOR FPGAs ® Semiconductor Corporation CATALOG No. DC-04-A Please visit our website www.murata.com POWER SUPPLY REFERENCE GUIDE FOR Lattice® FPGAs Murata offers an extensive selection of DC-DC Converters, both isolated
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DC-04-A
GRM21BR71A475KA73L
GRM32ER71C226KE18L
POWR607
smd 8A
SCM40
lattice xp2
GRM188R11H104KA93
m1 smd transistor
POWR1014A
MPD6S022S
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm
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NE5550279A
R09DS0033EJ0200
NE55502ine
WS260
HS350
R09DS0033EJ0200
NE5550279A
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R1766
Abstract: No abstract text available
Text: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550779A
R09DS0040EJ0300
NE5550779A
NE5550779A-A
R1766
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100uf 16v murata tantalum
Abstract: GRM32EB31C226KE16 GRM188R11H104KA93 DC03A MPD6S012S MPDTY102S GRM32EB31C fpga altera XP06501 EP3C120
Text: 2008 MURATA PRODUCTS POWER SUPPLY REFERENCE GUIDE FOR FPGAs CATALOG NO. DC-03-A Please visit our website www.murata.com POWER SUPPLY REFERENCE GUIDE FOR ALTERA® FPGAs Murata offers an extensive selection of DC–DC Converters, both isolated and non-isolated. This reference guide
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DC-03-A
100uf 16v murata tantalum
GRM32EB31C226KE16
GRM188R11H104KA93
DC03A
MPD6S012S
MPDTY102S
GRM32EB31C
fpga altera
XP06501
EP3C120
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CM105X5R105K25A
Abstract: No abstract text available
Text: No0024 Ver.002 Technical Information Paper Apr. 2010 外付け部品カタログ •周辺部品情報 ●周辺部品変更情報 カタログ内の DC/DC 使用回路例の周辺部品に型番変更及び生産中止のものが含まれています。
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No0024
CD54-xxx
CD75-xxx
CR54-xxx
CR75-xxx
XB0ASB03A1B-G
XB01SB04A2B-G
XBS053V13R-Gï
XBS104S13R-Gï
U3FWJ44N
CM105X5R105K25A
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ic audio 5w 8 pin
Abstract: BD5424EFS GRM21BB31H105KA12 12v class d amplifier 40W GRM188R11H104KA93 GRM21BB31 Speaker 40W HTSSOP-A44 grm21bb31e335ka75 POWERFUL AUDIO IC IN 2012
Text: High Performance Class-D Speaker Amplifier Series 20W+20W Class-D Speaker Amplifier for Analog Input No.09075EAT04 BD5424EFS ●Overview BD5424EFS is a 20W + 20W stereo class-D power amplifier IC, developed for space-saving and low heat-generation applications such as low-profile TV sets. The IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD process
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09075EAT04
BD5424EFS
BD5424EFS
R0039A
ic audio 5w 8 pin
GRM21BB31H105KA12
12v class d amplifier 40W
GRM188R11H104KA93
GRM21BB31
Speaker 40W
HTSSOP-A44
grm21bb31e335ka75
POWERFUL AUDIO IC IN 2012
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Untitled
Abstract: No abstract text available
Text: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
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NE5550279A
R09DS0033EJ0200
NE5550279A
NE5550279A-A
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ATC100A100JW
Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm
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NE5550279A
R09DS0033EJ0100
NE5550279A
NE5550279A-A
WS260
HS350
ATC100A100JW
GRM188B31C105KA92
ATC100A3R9BW
atc100a150
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ne5550
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm
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NE5550779A
R09DS0040EJ0300
NE555077
NE5550779A
ne5550
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X7T voltage dependence
Abstract: GRM155B31A225K GR331 GRM155R71E104K GRM188R61E475 GRM188R71C105KA12 GRM1555C1HR10BA01 GRM32ER71H106KA12 GRM0222C1A101GD05 GRM188D71
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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ISO14001
C02E-17
X7T voltage dependence
GRM155B31A225K
GR331
GRM155R71E104K
GRM188R61E475
GRM188R71C105KA12
GRM1555C1HR10BA01
GRM32ER71H106KA12
GRM0222C1A101GD05
GRM188D71
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NE5550779A-T1
Abstract: sma 906
Text: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550779A
R09DS0040EJ0200
NE5550779A
NE5550779A-A
NE5550779A-T1
sma 906
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GRM32ER11
Abstract: GC 5.5V 0.33F GRM188B31E474KA75 GC 5.5V 0.10F GC 5.5V 0.22F 5.5V 0.47f GC B13101 GRM32EB30J476ME16 GRM21BB10J106KE01 grm218
Text: !お願い 製品によっては守らないと発煙、発火等にいたる可能性のある定格や!注意（保管・使用環境、定格上の注意、実装上の注意、取扱上の注意）を当PDFカタログに記載して おりますので必ずご覧ください。なお、当PDFカタログには、代表的な仕様のみを記載しておりますので、ご注文にあたっては詳細な仕様が記載されている納入仕様書の内容
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C02J11
C02-11
GRM15/18/21/31
GRM32/43/55
GRM03
GRM03/15
IEC6038414
GRM32ER11
GC 5.5V 0.33F
GRM188B31E474KA75
GC 5.5V 0.10F
GC 5.5V 0.22F
5.5V 0.47f GC
B13101
GRM32EB30J476ME16
GRM21BB10J106KE01
grm218
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BM81028
Abstract: stk403-130
Text: Datasheet Power Supply IC Series for TFT-LCD Panels Multi-Channel System Power Supply IC BM81028AMWV ●General Description BM81028AMWV is a system power supply IC for TFT-LCD panels which are used in monitors, notebook type displays, and tablets. This IC incorporates HAVDD, VCOM amplifier in addition
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BM81028AMWV
BM81028AMWV
BM81028
stk403-130
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Untitled
Abstract: No abstract text available
Text: Middle Power Class-D Speaker Amplifiers Analog Input / BTL Output Class-D Speaker Amplifier No.10075EBT04 BD5424EFS ●Description BD5424EFS is a 20W + 20W stereo class-D power amplifier IC, developed for space-saving and low heat-generation applications such as low-profile TV sets. The IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD process technology
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BD5424EFS
10075EBT04
BD5424EFS
R1010A
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