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California Eastern Laboratories (CEL) NE5550779A-A RF MOSFET LDMOS 7.5V 79A
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DigiKey	NE5550779A-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE5550779A-T1-A RF MOSFET LDMOS 7.5V 79A
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DigiKey	NE5550779A-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC NE5550779A-T1A-A N-CHANNEL POWER MOSFET
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DigiKey	NE5550779A-T1A-A	Bulk			77	1 - 10 - 100 $3.91 1000 $3.91 10000 $3.91	Buy Now
Renesas Electronics Corporation NE5550779A-T1A-A NE5550779 - RF Power Field-Effect Transistor, N-Channel MOSFET '
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Rochester Electronics	NE5550779A-T1A-A		20,035		1	1 $3.76 10 $3.76 100 $3.53 1000 $3.2 10000 $3.2	Buy Now

NE555077 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE5550779A-A		Renesas Technology	RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 79A-PKG		Original	PDF
NE5550779A-EV04-A		California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL NPN MED PWR TRANS		Original	PDF
NE5550779A-EV09-A		California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL NPN MED PWR TRANS		Original	PDF
NE5550779A-T1-A		Renesas Technology	RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 2.1A 79A-PKG		Original	PDF

NE555077 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
LQW18AN4R7NG00 Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01 Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0	Original	NE5550779A LQW18AN4R7NG00 ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01	PDF
R1766 Abstract: No abstract text available Text: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)	Original	NE5550779A R09DS0040EJ0300 NE5550779A NE5550779A-A R1766	PDF
Untitled Abstract: No abstract text available Text: Evaluation Board Document NE5550779A-EV04-A Evaluation Board o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550779A-EV04-A is an evaluation circuit board for Renesas’ LDMOS power FET,	Original	NE5550779A-EV04-A NE5550779A-EV04-A NE5550779A 460MHz. 140mA 28mil 460MHz 140mA	PDF
Untitled Abstract: No abstract text available Text: Evaluation Board Document NE5550779A-EV09-A Evaluation Board o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550779A-EV09-A is an evaluation circuit board for Renesas’ LDMOS power FET,	Original	NE5550779A-EV09-A NE5550779A-EV09-A NE5550779A 915MHz. 100mA 28mil 915MHz 100mA	PDF
ne5550 Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm	Original	NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550	PDF
NE5550779A-T1 Abstract: sma 906 Text: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)	Original	NE5550779A R09DS0040EJ0200 NE5550779A NE5550779A-A NE5550779A-T1 sma 906	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF