LQW18AN4R7NG00
Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0
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NE5550779A
LQW18AN4R7NG00
ATC100A6R8BW
ATC100A2R7JW
GRM188B31C105KA92
ATC100A120BW
MCR03J103
GQM1882C1H150JB01
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R1766
Abstract: No abstract text available
Text: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550779A
R09DS0040EJ0300
NE5550779A
NE5550779A-A
R1766
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GRM21bc81c106
Abstract: GRM155B11 grm155b31a474ke GRM32EB30J107 GRM31CB31 grm1882c1h100 GRM31BR7 GJM0334 GRM188R11H104 GRM033R61A104KE
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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20eristics
ISO14001
C02E-18
GRM21bc81c106
GRM155B11
grm155b31a474ke
GRM32EB30J107
GRM31CB31
grm1882c1h100
GRM31BR7
GJM0334
GRM188R11H104
GRM033R61A104KE
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ne5550
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm
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NE5550779A
R09DS0040EJ0300
NE555077
NE5550779A
ne5550
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X7T voltage dependence
Abstract: GRM155B31A225K GR331 GRM155R71E104K GRM188R61E475 GRM188R71C105KA12 GRM1555C1HR10BA01 GRM32ER71H106KA12 GRM0222C1A101GD05 GRM188D71
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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ISO14001
C02E-17
X7T voltage dependence
GRM155B31A225K
GR331
GRM155R71E104K
GRM188R61E475
GRM188R71C105KA12
GRM1555C1HR10BA01
GRM32ER71H106KA12
GRM0222C1A101GD05
GRM188D71
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NE5550779A-T1
Abstract: sma 906
Text: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550779A
R09DS0040EJ0200
NE5550779A
NE5550779A-A
NE5550779A-T1
sma 906
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