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Murata Manufacturing Co Ltd GRM55ER72A475KA01L CAP CER 4.7UF 100V X7R 2220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GRM55ER72A475KA01L	Digi-Reel			1	1 $1.94 10 $1.94 100 $1.94 1000 $1.94 10000 $1.94	Buy Now
	GRM55ER72A475KA01L	Cut Tape			1	1 $1.94 10 $1.94 100 $1.94 1000 $1.94 10000 $1.94	Buy Now
	GRM55ER72A475KA01L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	GRM55ER72A475KA01L		5,557			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	GRM55ER72A475KA01L		859			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	GRM55ER72A475KA01L		687			1 $3.06 10 $3.06 100 $3.06 1000 $1.2623 10000 $1.2623	Buy Now
	GRM55ER72A475KA01L		520			1 $4.35 10 $4.35 100 $2.6825 1000 $2.3925 10000 $2.3925	Buy Now
	GRM55ER72A475KA01L		372			1 $1.9125 10 $1.9125 100 $1.9125 1000 $0.9563 10000 $0.9563	Buy Now
	GRM55ER72A475KA01L		247			1 $3.06 10 $3.06 100 $1.53 1000 $1.4153 10000 $1.4153	Buy Now
	GRM55ER72A475KA01L		231			1 $3.12 10 $3.12 100 $2.08 1000 $1.924 10000 $1.924	Buy Now
	GRM55ER72A475KA01L		176			1 $3.5538 10 $3.5538 100 $2.3692 1000 $2.1915 10000 $2.1915	Buy Now
	GRM55ER72A475KA01L		100			1 $3.06 10 $3.06 100 $1.53 1000 $1.53 10000 $1.53	Buy Now
	GRM55ER72A475KA01L		18			1 $2.016 10 $1.512 100 $1.26 1000 $1.26 10000 $1.26	Buy Now
	GRM55ER72A475KA01L		5			1 $2.64 10 $1.98 100 $1.98 1000 $1.98 10000 $1.98	Buy Now
TTI	GRM55ER72A475KA01L	Reel	25,000		500	1 - 10 - 100 - 1000 $0.96 10000 $0.94	Buy Now
	GRM55ER72A475KA01L	Cut Tape	4,250		10	1 - 10 $1.16 100 $1.16 1000 $1.16 10000 $1.16	Buy Now
TME	GRM55ER72A475KA01L		1,875		1	1 $1.45 10 $1.19 100 $0.83 1000 $0.75 10000 $0.73	Buy Now

ComSIT USA	GRM55ER72A475KA01L		6,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Velocity Electronics	GRM55ER72A475KA01L		74			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	GRM55ER72A475KA01L		470			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	GRM55ER72A475KA01L	Reel	59,000	16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Component Electronics, Inc	GRM55ER72A475KA01L		550			1 $3.08 10 $3.08 100 $2.31 1000 $2 10000 $2	Buy Now
Win Source Electronics	GRM55ER72A475KA01L		2,528			1 - 10 - 100 $1.507 1000 $1.264 10000 $1.264	Buy Now
Others GRM55ER72A475KA01L CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 100V, 10% +TOL, 10% -TOL, X7R, 15% TC, 4.7UF, SURFACE MOUNT, 2220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	GRM55ER72A475KA01L		392			1 $3.06 10 $3.06 100 $1.53 1000 $1.4153 10000 $1.4153	Buy Now
Chip-Germany GmbH	GRM55ER72A475KA01L		828			1 - 10 - 100 - 1000 - 10000 -	Get Quote

GRM55ER72A475K Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GRM55ER72A475KA01		muRata	CAP,CER,4.7UF,X7R,100V,10%,2220		Original	PDF
GRM55ER72A475KA01L		muRata	Ceramic Capacitors, Capacitors, CAP CER 4.7UF 100V 10% X7R 2220		Original	PDF

GRM55ER72A475K Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GRM55ER72A475KA01 Abstract: capacitor 2220 Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM32/43/55 Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.70mm±0.40mm	Original	GRM32/43/55 GRM55ER72A475KA01p 100Vdc) 180mm 330mm GRM55ER72A475KA01 capacitor 2220	PDF
Untitled Abstract: No abstract text available Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.7mm±0.4mm Code	Original	GRM55ER72A475KA01p 100Vdc) 180mm 330mm 100Vdc	PDF
GRM55ER72A475K Abstract: MURATA GRM55ER72A475K GRM55ER72A475 Text: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 2220 X7R 4.7uF 100V Murata Global Part No: GRM55ER72A475K 1. Dimension 3. Impedance/ESR - Frequency Equipment: 1000 T Impedance Impedance/ESR ohm W ( mm) L W T 5.7 +/-0.4 5.0 +/-0.4 2.5 +/-0.2	Original	GRM55ER72A475K 025max CVHF-400 GRM55ER72A475K MURATA GRM55ER72A475K GRM55ER72A475	PDF
Untitled Abstract: No abstract text available Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.7mm±0.4mm Code	Original	GRM55ER72A475KA01p 100Vdc) 180mm 330mm	PDF
GRM55DR72J224KW01L Abstract: gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188 Text: Capacitors Monolithic Ceramic Capacitors GCM_R7 X7R High Dielectric Constant Type X7R 10/16/25/50V g e T e L Part Number GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GCM32N GCM32R GCM32D GCM32E GCM43R GCM43E GCM55R L 0.6 ±0.03 1.0 ±0.05	Original	10/16/25/50V GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GRM55DR72J224KW01L gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188	PDF
G2225X7R225KT3AB Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6	PDF
transistor 1800MHz Abstract: r.f. amplifier 30mhz Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz r.f. amplifier 30mhz	PDF
EI -40C Abstract: No abstract text available Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical	Original	RF3933 DS120306 EI -40C	PDF
GRF31CR72A105KA01L Abstract: grm43er61a476ke19l grm31cr60j226ke19l GRM31CR72E104KW03L GRM31CR71E475KA88L GRM31MR72A474KA35L GRM31CR60J476ME19L 3216 capacitor GRF32ER72A225KA11L X7R 1KV Text: C44E1.pdf 04.4.6 Chip Monolithic Ceramic Capacitors for DC-DC Converters Chip Monolithic Ceramic Capacitors for DC-DC Converters C44E1.pdf 04.4.6 Murata's extensive and complete chip capacitor line up enables your DC-DC converters and voltage regulators to be compact and high performanced.	Original	C44E1 GRF31CR72A105KA01L grm43er61a476ke19l grm31cr60j226ke19l GRM31CR72E104KW03L GRM31CR71E475KA88L GRM31MR72A474KA35L GRM31CR60J476ME19L 3216 capacitor GRF32ER72A225KA11L X7R 1KV	PDF
Untitled Abstract: No abstract text available Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To	Original	RFG1M09180 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 47dBm	PDF
Untitled Abstract: No abstract text available Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology	Original	RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm	PDF
rf3826 Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz	PDF
RFHA1000 Abstract: No abstract text available Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 15W  Advanced Heat-Sink Technology	Original	RFHA1000 50MHz 1000MHz, RFHA1000 1000MHz DS121114	PDF
RFG1M20180 Abstract: ATC800B820JT Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to	Original	RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT	PDF

RFG1M20180SB Abstract: j35 fet RFG1M20180SQ Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to	Original	RFG1M20180 RFG1M20180 RF400-2 -38dBc -55dBc DS120803 RFG1M20180SB j35 fet RFG1M20180SQ	PDF
Untitled Abstract: No abstract text available Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz	Original	RF3931 900MHz EAR99 RF3931 DS120306	PDF
Untitled Abstract: No abstract text available Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical	Original	RF3934 RF3934 DS120306	PDF
Untitled Abstract: No abstract text available Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS120216	PDF
404j Abstract: rf3826 transistor 1800MHz 100A0R9BT150X Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) 404j transistor 1800MHz 100A0R9BT150X	PDF
ATC800A Abstract: RF3931 ER35 Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB	Original	RF3931 EAR99 RF3931 cellul01L GRM55ER72A475KA01L 100uF, ECE-V1HA101UP ATC800A ER35	PDF
Untitled Abstract: No abstract text available Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to	Original	RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS110406	PDF
GRM55ER72A475KA01L Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance	Original	RF3934 RF3934 DS111005 GRM55ER72A475KA01L DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS	PDF
Untitled Abstract: No abstract text available Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed	Original	RFG1M20090 RFG1M20090 DS130823	PDF
Untitled Abstract: No abstract text available Text: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier	Original	RF3933 RF3933 DS130905	PDF

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GRM55ER72A475K Datasheets (2)

GRM55ER72A475K Datasheets Context Search

GRM55ER72A475KA01

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GRM55ER72A475K

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GRM55DR72J224KW01L

G2225X7R225KT3AB

transistor 1800MHz

EI -40C

GRF31CR72A105KA01L

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rf3826

RFHA1000

RFG1M20180

RFG1M20180SB

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404j

ATC800A

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GRM55ER72A475KA01L

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