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    GTO 200A Search Results

    GTO 200A Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    RJP65S08DWA-00#W0 Renesas Electronics Corporation IGBT 650V 200A Wafer Visit Renesas Electronics Corporation
    RJP65S08DWT-80#X0 Renesas Electronics Corporation IGBT 650V 200A Chip Visit Renesas Electronics Corporation
    RJP65S08DWT-00#X0 Renesas Electronics Corporation IGBT 650V 200A Chip Visit Renesas Electronics Corporation

    GTO 200A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter


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    PDF DGT409BCA DS4414-4 LN25790) DGT409BCA 000V/Â

    DSF21545SV

    Abstract: DSF21545SV45
    Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.


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    PDF DSF21545SV DS4153-4 DS4153-5 DSF21545SV DG858BW 0000A DSF21545SV45

    DGT409BCA

    Abstract: TGS 2600 current source inverter TGS 800 GTO thyristor GTO thyristor 3000V 800A gto Gate Drive circuit 150a gto Gate Turn-Off Thyristors GTO thyristor Application notes
    Text: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter


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    PDF DGT409BCA DS4414-4 LN25790) DGT409BCA TGS 2600 current source inverter TGS 800 GTO thyristor GTO thyristor 3000V 800A gto Gate Drive circuit 150a gto Gate Turn-Off Thyristors GTO thyristor Application notes

    Untitled

    Abstract: No abstract text available
    Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse


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    PDF DGT409BCA DS4414-4 DGT409 000V/Â

    Untitled

    Abstract: No abstract text available
    Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.


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    PDF DSF21545SV DS4153-4 DS4153-5 DSF21545SV DG858BW 0000A

    Untitled

    Abstract: No abstract text available
    Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.


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    PDF DSF21545SV DS4153-4 DS4153-5 DSF21545SV DG858BW 0000A

    TGS 2600

    Abstract: GTO thyristor 3000V 800A 150a gto DGT409BCA DGT409BCA6565 TGS 200
    Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse


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    PDF DGT409BCA DS4414-4 DGT409 TGS 2600 GTO thyristor 3000V 800A 150a gto DGT409BCA DGT409BCA6565 TGS 200

    MITSUBISHI GATE TURN-OFF THYRISTORS

    Abstract: 200a gto gto 200A FGR3000CV-90DA GTO 100A gto 2400 GTO switching test mitsubishi gto mitsubishi 4500V 900A
    Text: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000CV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING FGR3000CV-90DA Dimensions in mm GATE WHITE 500 ± 8 AUXILIARY CATHODE CONNECTOR (RED) 26 ± 0.5 ● ITQRM Repetitive controllable on-state current .3000A


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    PDF FGR3000CV-90DA MITSUBISHI GATE TURN-OFF THYRISTORS 200a gto gto 200A FGR3000CV-90DA GTO 100A gto 2400 GTO switching test mitsubishi gto mitsubishi 4500V 900A

    TGS 2600

    Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
    Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse


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    PDF DGT409BCA DS4414-4 DGT409 TGS 2600 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive

    1000A 100V power diode

    Abstract: DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


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    PDF DSF11060SG DS4217-2 DS4548 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. 1000A 100V power diode DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60

    DSF8035SK

    Abstract: DSF8035SK35
    Text: DSF8035SK DSF8035SK Fast Recovery Diode Replaces March 1998 version, DS4412-1.3 DS4412-2.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 335A IFSM 3500A Qr 400µC trr 4.0µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double side cooling


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    PDF DSF8035SK DS4412-1 DS4412-2 DSF8035SK35 DSF8035SK DSF8035SK35

    DSF11060SG

    Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


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    PDF DSF11060SG DS4217-3 DS4548-4 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. DSF11060SG 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548

    1000A 100V power diode

    Abstract: No abstract text available
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


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    PDF DSF11060SG DS4217-3 DS4548-4 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. 1000A 100V power diode

    Untitled

    Abstract: No abstract text available
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


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    PDF DSF11060SG DS4217-3 DS4548-4 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b.

    DSF8035SK35

    Abstract: AN4506 AN4839 AN4853 DSF8035SK
    Text: DSF8035SK DSF8035SK Fast Recovery Diode Replaces March 1998 version, DS4412-1.3 DS4412-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 335A IFSM 3500A Qr 400µC trr 4.0µs • Snubber Diode For GTO Applications FEATURES ■ Double side cooling


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    PDF DSF8035SK DS4412-1 DS4412-2 DSF8035SK35 DSF8035SK35 AN4506 AN4839 AN4853 DSF8035SK

    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 DSF8035SK ADVANCE ENGINEERING DATA DS4412-1.2 DSF8035SK FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 335A IFSM 3500A Qr 400µC trr 4.0µs • Snubber Diode For GTO Applications. FEATURES ■ Double side cooling. ■ High surge capability.


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    PDF DSF8035SK DS4412-1 DSF8035SK35

    DS4217-2

    Abstract: ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs APPLICATIONS • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


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    PDF DSF11060SG DS4217-2 DS4548 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110

    Untitled

    Abstract: No abstract text available
    Text: DSF8035SK DSF8035SK Fast Recovery Diode Replaces January 2000 version, issue DS4412-2.0 DS4412-3.0 June 2004 KEY PARAMETERS VRRM 3500V IF AV 335A IFSM 3500A Qr 400µC trr 4.0µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double side cooling


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    PDF DSF8035SK DS4412-2 DS4412-3 DSF8035SK35 DSF8035SK35

    DG858BW

    Abstract: GTO thyristor 4500V 4000A 200a gto preliminary AN4506 AN4839 AN4853 DSF21545SV DSF21545SV45
    Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter


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    PDF DSF21545SV DS4153-3 DS4153-4 0000A DSF21545SV DG858BW GTO thyristor 4500V 4000A 200a gto preliminary AN4506 AN4839 AN4853 DSF21545SV45

    Untitled

    Abstract: No abstract text available
    Text: INTRODUCTION Toshiba is one of the world leader in high power semiconductors, today. Since 1972, we have been making great efforts on developing and producing high power GTOs. The first production type of high power GTO was 600V/200A. Since then, the ratings and characteristics of GTO, such as switching perform­


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    PDF 00V/200A. 00-4000A 300-6000V

    GTO thyristor

    Abstract: SKGH thyristor tt 31 1600 thyristor TT 110A GTO MODULE
    Text: ISE 0 I 813U.71 0001SQ5 3 | S^MIKRON.INC V drm V V rrm V 800 1000 1200 1400 1600 15 15 15 15 15 T k .Z3 seMIKRDn SEMIPACK 3 GTO Thyristor/ Diode Modules SKGH 500/08 SKGH 500/10 SKGH 500/12 SKGH 500/14 SKGH 500/16 SKGH500 GTO thyristor data Symbol SKGH 500


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    PDF 0001SQ5 SKGH500 000A/1800A 650A/1500A GTO thyristor SKGH thyristor tt 31 1600 thyristor TT 110A GTO MODULE

    100EXG11

    Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
    Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26


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    PDF SG2500EX24 SG3000EX24 SG4000EX26 SG2000R24 SG2000U24 SG2000W24 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 100EXG11 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v

    GTO 6500V

    Abstract: No abstract text available
    Text: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The D G T409 BCA is a sym m etrical GTO designed for applications w hich specifically require a reverse blocking capability, such as current source inverters CSI . R everse


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    PDF DGT409BC A6565 DS4414-2 DS4414-3 000V/jiS GTO 6500V

    LTCM

    Abstract: No abstract text available
    Text: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR DS4414-3.3 July 1998 Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse


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    PDF DS4414-2 DGT409BC A6565 DS4414-3 DGT409 LTCM