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    Untitled

    Abstract: No abstract text available
    Text: 512Mb DDR SDRAM H5DU5182EFR-xxI H5DU5162EFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Feb. 2011


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    PDF 512Mb H5DU5182EFR-xxI H5DU5162EFR-xxI 1H5DU5182EFR-xxI DDR333 H5DU5182EFR H5DU5162EFR

    H5DU5162EFR

    Abstract: DDR200 DDR266A DDR266B DDR333 DDR400 DDR500
    Text: 512Mb DDR SDRAM H5DU5182EFR-xxI H5DU5162EFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009


    Original
    PDF 512Mb H5DU5182EFR-xxI H5DU5162EFR-xxI 1H5DU5182EFR-xxI H5DU5182EFR H5DU5162EFR 912-bit DDR200 DDR266A DDR266B DDR333 DDR400 DDR500

    H5DU5182EFR-XXC

    Abstract: H5DU5182EFR
    Text: 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Feb. 2011


    Original
    PDF 512Mb H5DU5182EFR H5DU5162EFR 1H5DU5182EFR DDR333 H5DU5162EFR H5DU5182EFR-XXC

    H5DU5182EFR

    Abstract: DDR200 DDR266A DDR333 DDR400 DDR500 H5DU5162EFR H5DU5162
    Text: 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009


    Original
    PDF 512Mb H5DU5182EFR H5DU5162EFR 1H5DU5182EFR H5DU5182EFR H5DU5162EFR 912-bit DDR200 DDR266A DDR333 DDR400 DDR500 H5DU5162

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank


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    PDF 256MB 200PIN SDN03264C1CE1HY-50R PC-3200 D-12681

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


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    PDF 256Mx4 H5TQ1G43BFR-H9C 78ball) H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83BFR-H9C H5TQ2G63BFR-H9C H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR

    H5DU5162

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank


    Original
    PDF 256MB 200PIN SDN03264C1CE1HY-50R PC-3200 D-12681 H5DU5162

    H5DU5162

    Abstract: H5DU5182 H5DU518 H5DU5182EFR-XXC H5DU
    Text: 512Mb DDR SDRAM H5DU518 6 2EFR-xxC H5DU518(6)2EFR-xxI H5DU518(6)2EFR-xxL H5DU518(6)2EFR-xxJ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original
    PDF 512Mb H5DU518 1H5DU5182EFR-xxx H5DU5162EFR-xxx DDR333 H5DU5162 H5DU5182 H5DU5182EFR-XXC H5DU