Untitled
Abstract: No abstract text available
Text: 512Mb DDR SDRAM H5DU5182EFR-xxI H5DU5162EFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Feb. 2011
|
Original
|
PDF
|
512Mb
H5DU5182EFR-xxI
H5DU5162EFR-xxI
1H5DU5182EFR-xxI
DDR333
H5DU5182EFR
H5DU5162EFR
|
H5DU5162EFR
Abstract: DDR200 DDR266A DDR266B DDR333 DDR400 DDR500
Text: 512Mb DDR SDRAM H5DU5182EFR-xxI H5DU5162EFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009
|
Original
|
PDF
|
512Mb
H5DU5182EFR-xxI
H5DU5162EFR-xxI
1H5DU5182EFR-xxI
H5DU5182EFR
H5DU5162EFR
912-bit
DDR200
DDR266A
DDR266B
DDR333
DDR400
DDR500
|
H5DU5162ETR-XXI
Abstract: H5DU5182ETR DDR200 DDR266A DDR266B DDR333 DDR400 DDR500 H5DU5162ETR H5DU5182ETR-xxI
Text: 512Mb DDR SDRAM H5DU5182ETR-xxI H5DU5162ETR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009
|
Original
|
PDF
|
512Mb
H5DU5182ETR-xxI
H5DU5162ETR-xxI
1H5DU5182ETR-xxI
H5DU5182ETR
H5DU5162ETR
912-bit
H5DU5162ETR-XXI
DDR200
DDR266A
DDR266B
DDR333
DDR400
DDR500
H5DU5182ETR-xxI
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.1 09.02.2010 1024MB DDR SDRAM SoDIMM 200Pin SO-DIMM Features: SDN01G64L1BE2HY-50R 1 200-pin 64-bit Small Outline Dual-In-Line. Double Data Rate synchronous DRAM Module for industrial applications 1 DDR-SDRAM component base: Hynix H5DU5182EFR die rev.: E
|
Original
|
PDF
|
1024MB
200Pin
SDN01G64L1BE2HY-50R
200-pin
64-bit
H5DU5182EFR
D-12681
|
H5DU5182EFR-XXC
Abstract: H5DU5182EFR
Text: 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Feb. 2011
|
Original
|
PDF
|
512Mb
H5DU5182EFR
H5DU5162EFR
1H5DU5182EFR
DDR333
H5DU5162EFR
H5DU5182EFR-XXC
|
Untitled
Abstract: No abstract text available
Text: Data Sheet 512MB DDR Rev.1.2 15.11.2010 SDRAM SoDIMM 200 PIN SO-DIMM Features: SDN06464D1BE1HY-xxR • 200-pin 64-bit Small Outline Dual-In-Line. Double Data Rate synchronous DRAM Module for industrial applications • DDR-SDRAM component base: Hynix H5DU5182EFR die rev.: E
|
Original
|
PDF
|
512MB
SDN06464D1BE1HY-xxR
200-pin
64-bit
H5DU5182EFR
D-12681
|
H5DU5162ETR
Abstract: H5DU5182ETR H5DU5162 H5DU5182 1H5du5182etr DDR200 DDR333 DDR400 DDR500 H5DU5162ET
Text: 512Mb DDR SDRAM H5DU5182ETR H5DU5162ETR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009
|
Original
|
PDF
|
512Mb
H5DU5182ETR
H5DU5162ETR
1H5DU5182ETR
H5DU5182ETR
H5DU5162ETR
912-bit
H5DU5162
H5DU5182
1H5du5182etr
DDR200
DDR333
DDR400
DDR500
H5DU5162ET
|
H5DU5182EFR
Abstract: DDR200 DDR266A DDR333 DDR400 DDR500 H5DU5162EFR H5DU5162
Text: 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009
|
Original
|
PDF
|
512Mb
H5DU5182EFR
H5DU5162EFR
1H5DU5182EFR
H5DU5182EFR
H5DU5162EFR
912-bit
DDR200
DDR266A
DDR333
DDR400
DDR500
H5DU5162
|
H5DU5162ETR
Abstract: No abstract text available
Text: 512Mb DDR SDRAM H5DU5182ETR H5DU5162ETR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009
|
Original
|
PDF
|
512Mb
H5DU5182ETR
H5DU5162ETR
1H5DU5182ETR
H5DU5162ETR
912-bit
|
Untitled
Abstract: No abstract text available
Text: 512Mb DDR SDRAM H5DU5182ETR-xxI H5DU5162ETR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009
|
Original
|
PDF
|
512Mb
H5DU5182ETR-xxI
H5DU5162ETR-xxI
1H5DU5182ETR-xxI
H5DU5182ETR
H5DU5162ETR
912-bit
|
Untitled
Abstract: No abstract text available
Text: Data Sheet 512MB DDR Rev.1.2 15.11.2010 SDRAM SoDIMM 200 PIN SO-DIMM Features: SDN06464D1BE1HY-xxR • 200-pin 64-bit Small Outline Dual-In-Line. Double Data Rate synchronous DRAM Module for industrial applications • DDR-SDRAM component base: Hynix H5DU5182EFR die rev.: E
|
Original
|
PDF
|
512MB
SDN06464D1BE1HY-xxR
200-pin
64-bit
H5DU5182EFR
D-12681
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.0 02.04.2009 1024MB DDR – SDRAM DIMM 184PIN DIMM Features: SDU01G64H3BE2HY-50R 1024MB PC-3200 in TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 1 Module densities 1024MB with 16 dies and 2 ranks
|
Original
|
PDF
|
1024MB
184PIN
SDU01G64H3BE2HY-50R
PC-3200
D-12681
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.1 22.02.2010 512MB DDR1 – SDRAM SO-DIMM Features: Features: 1 200-pin 64-bit Small Outline, Dual-In-Line Double 200 PIN SO-DIMM SDN06464K1BE1HY-50R 1 512MB DDR PC3200 1 1 TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3
|
Original
|
PDF
|
512MB
200-pin
64-bit
SDN06464K1BE1HY-50R
PC3200
D-12681
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.0 13.01.2010 512MB DDR – SDRAM DIMM 184PIN DIMM Features: SDU06464B5BE1HY-50R 512MB PC-3200 in TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 1 Module densities 512MB with 8 dies and 1 rank
|
Original
|
PDF
|
512MB
184PIN
SDU06464B5BE1HY-50R
PC-3200
D-12681
|
|
H5DU5162ETR-XXI
Abstract: No abstract text available
Text: 512Mb DDR SDRAM H5DU518 6 2ETR-xxC H5DU518(6)2ETR-xxI H5DU518(6)2ETR-xxL H5DU518(6)2ETR-xxJ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
512Mb
H5DU518
1H5DU5182ETR-xxx
H5DU5162ETR-xxx
H5DU5182ETR
H5DU5162ETR-XXI
|
H5DU5162
Abstract: H5DU5182 H5DU518 H5DU5182EFR-XXC H5DU
Text: 512Mb DDR SDRAM H5DU518 6 2EFR-xxC H5DU518(6)2EFR-xxI H5DU518(6)2EFR-xxL H5DU518(6)2EFR-xxJ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
512Mb
H5DU518
1H5DU5182EFR-xxx
H5DU5162EFR-xxx
DDR333
H5DU5162
H5DU5182
H5DU5182EFR-XXC
H5DU
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.1 01.04.2010 1024MB DDR SDRAM SoDIMM 200Pin SO-DIMM Features: SDN01G64D1BE2HY-50R 1024MB DDR PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 • Module densities
|
Original
|
PDF
|
1024MB
200Pin
SDN01G64D1BE2HY-50R
PC-3200
D-12681
|