HA 1156 R Search Results

foxconn socket 7

Contextual Info: 7 3 4 IDEAS GENERATED DRAWING, DO NOT CHANGE BY HAND. & © LOAD ING MODULE PART NO. PT 4 4 A 2 5 - 6 4 0 1 REF. DETAIL : PAGE 2 & 3 C D E 1 o 3 4 5 6 7 REV . EON, NO. APPD . A BC -11-00 1 2 5 4 0 D . Huang B BC -11- 0038964 D . Huang A NOT ES: 1. ASSEMBLY PROCEDURE

2sc3886a

Abstract: IN6008
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC3886A HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. HIGH SPEED SWITCHING REGULATOR OUTPUT APPLICATIONS. . High Voltage : V^jjo *£1500V . High Speed Switching Resistive Load tf=0. lfis(Typ.) . Collector Metal is Fully Covered with Mold Resion.

L71A

Abstract: hydrocarbon sensor OPB760N OPB760T OPB761T OPB762T OPB763T OPB770N OPB770T
Contextual Info: Product Bulletin OPB760T June 1996 L71ñSflO 1D7 OPTEK Photologic Reflective Object Sensors Types QPB760T, OPB761T, OPB762T, OPB763T Features • Choice of mounting configurations • Choice of output configurations Description The OPB760T series of reflective

Contextual Info: 2 4 3 5 7 6 P ld s fic RJI Kabel AWG 22 P i t Cable M Steckgeometrie RJ45 nach IEC 60603-7 22 P la s tic H10x1 Belegungsplan Loading-Plan Schirm Shield Gelb Yellow Orange Orange Wei 8 White Blau Blue 2 3 6 13,9 Ubertragungseigenschaften nach ISO/IEC 11801:2002: Class 0.

STP60N06-16

Abstract: STP60N06 STP60N05 STP60N05-16 4s32 LD30-A STP60N05 10 LD30A
Contextual Info: 7 ^ 2 ^ 2 3 7 D 0 4 b S 5 3 4 5 2 M S G T H SGS-THOMSON iï*^@^[I gTÎMO(gS STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05-16 STP60N 06-16 • . ■ ■ ■ . ■ V dss R D S (o n Id 50 V 60 V < 0.016 Q < 0.016 a

Contextual Info: IRFP350 A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

schematic diagram PC Power supply 500w

Abstract: schematic diagram of laptop inverter compaq relay rs-5 HA 1156 R kds 97 45 PN-3320 R6764 400H 420H RC336LD
Contextual Info: 5&/'DQG5&/' 0RGHP'HYLFH6HWVIRU3RUWDEOH$SSOLFDWLRQV 'HVLJQHU V*XLGH 3UHOLPLQDU\ 2UGHU 1R  5HY  1RYHPEHU   RC56LD and RC336LD Modem Device Sets Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no responsibility

Contextual Info: HM62W864 Series 65536-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI ADE-203-281B Z Rev. 2.0 Jul. 25, 1995 Description The Hitachi HM62W864 is a CMOS static RAM organized 64-kword X 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process technology. It

Contextual Info: BA6485AFP-Y 3-phase, full-wave, pseudo-linear motor driver The BA6485AFP-Y is an 1C that can be used to control and drive floppy disk drive spindle motors. This 1C uses a 3-phase, full-wave pseudo-linear drive system. Dimensions Units : mm BA6485AFP-Y (h so p 25)

Contextual Info: JUPD23C16000 16,777,216-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Pin Configuration Description T h e /JP D 23C 16000 is a w ith C M O S silic o n -g a te in o p e ra tio n an d has T T L -c o m p a tib le inputs 16,777,216-bit R O M fa b ric a te d

HV-45

Abstract: push pull converter 300V
Contextual Info: HV45 Mi Supertex inc. HV46 32-Channel Serial To Parallel Converter with P-Channel Open Drain Outputs Ordering Information Package Options Device Recommended Operating Vpp Max 44 J-Lead Quad Ceramic Chip Carrier HV45 -300 -220 -300 HV46 -220 44 J-Lead Quad

BT109

Abstract: HA 1156 R CXA1146 XA11-4 Sony CXA 20 pin CXA11 XA114 XA1156
Contextual Info: SONY. CXA1146Q/D /CXA1156Q/D Advance Information 8öit 160/300MSPS Triple VIDEO DAC Note : This specification is subject to change. 44 pin QFP Ceramic 40 pin DIP (Ceramic) Features • 1 6 0 /3 0 0 M H z update rate • 8-bit RGB • Sync., Blank and Overlay

Contextual Info: M655452 International IOR]Rectifier DDlSb70 352 • PD-9.703A IRFR214 IRFU214 HEXFET Power M O SFET • • • • • • • INR Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching

Contextual Info: Whiffl HEWLETT mLUM PACKARD 2 mm x 5 mm Rectangular LED Lamps Technical Data HLMP-S100 HLMP-S20X Series HLMP-S30X Series HLMP-S40X Series HLMP-S50X Series HLMP-S600 F eatures Package D im ensions • Rectangular Light Emitting Surface • Excellent for Flush

ER59256

Abstract: ER59256/P
Contextual Info: ER59256 Microchip 256 Bit Serial Electrically Erasable/Programmable ROM DESCRIPTION FEATURES The ER59256 is a low cost, serial EEPROM manufac­ tured in Microchip's highly reliable SNOS technology. The key features of this device are its +5V only operation

30N50A

Abstract: 30n60 to-220 30N50 30N60 IXGM30N60 IXGH30N50 IXGH30N60 IXGM30N50 wabash 30n5
Contextual Info: T T T X X W 4686226 1 I “ 01 X Y S CO RP ÏÏFj4bübridb 03E 00223 UUUUddd Y D IXGH30N50, 60 IXGM30N50, 60 t 30 AM PS, 500-600 VO LTS IXGH30N50 IXGM30N50 IXGH30N60 IXGM30N60 Unit Drain-Source Voltage 1 Vdss 500 600 Vdc Drain-Gate Voltage (Rq s = 1-OMft) (1)

Contextual Info: 7*12^237 D04bSS3 452 M SG TH SGS-THOMSON üO T ô*S STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 • . • . ■ . . V dss R d S ( o ii Id 50 V 60 V < 0 .0 1 6 Q < 0 .0 1 6 a 60 A

magnetic head amplifier MHz

Abstract: HA 1156 R
Contextual Info: SSI 32R529R ¿mmsuàms' 8-Channel Thin Film Read/Write Device Preliminary Data I 1 July, 1990 DESCRIPTION FEATURES The SSI 32R529 is an integrated read/write circuit designed for use with non-center tapped thin film heads in disk drive systems. Each chip controls eight

Contextual Info: V CYPRESS ADVANCED INFORMATION CY62148V MoBL 512K x 8 MoBL Static RAM W riting to the device is accom p lish ed by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. Data on th e eight I/O pins (l/O 0 th ro u g h l/ 0 7) is then w ritte n into th e location s p e ci­

Contextual Info: MICRON 32K SRAM MT5C2568 X 8 SRAM 32Kx 8 SRAM • H ig h sp eed : 1 0 ,1 2 ,1 5 , 20, 25 a n d 35n s PIN ASSIGNMENT Top View • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p ro cess • S in g le + 5 V ± 1 0 % p o w er su p p ly

1RFR214

Abstract: 25C2 AN-994 IRFR214 IRFU214
Contextual Info: International S Rectifier PD-9.703A IRFR214 IRFU214 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching Ease of Paralleling V dss - 250V R DS(on) - 2 0 ß

H1-1828A

Abstract: H11828A
Contextual Info: {S H I- 1 8 1 8 A , H I- 1 8 2 8 A Low Resistance, Single 8-Channel, and Differential 4-Channel, CMOS Analog Multiplexers August 1997 Features Description • Signal R a n g e .+15V • “ON” R esistance. 250i2

Contextual Info: KM6264B/KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5fiW (typ.) LL-Version Operating: 55mW/MHz (max.) • Single 5V ± 10% Power Supply

Contextual Info: M74HC4514 M74HC4515 SGS-THOMSON iy HC4514:4 TO 16 LINE DECODER/LATCH HC4515: 4 TO 16 LINE DECODER LATCH INV. HIGHSPEED tpD = 18 ns (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Icc = 4 nA (MAX.) AT Ta = 25 °C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.)