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    HBC8 Price and Stock

    KEMET Corporation HHBC8S-0R6A0067V

    CMC 67UH 2A 2LN TH
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    DigiKey HHBC8S-0R6A0067V Bulk 172 1
    • 1 $3.02
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    Mouser Electronics HHBC8S-0R6A0067V 93
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    KEMET Corporation HHBC8S-0R6A0043V

    CMC 43UH 2A 2LN TH
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    DigiKey HHBC8S-0R6A0043V Bulk 111 1
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    Mouser Electronics HHBC8S-0R6A0043V 144
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    TME HHBC8S-0R6A0043V 100 1
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    Avnet Abacus HHBC8S-0R6A0043V 23 Weeks 700
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    KEMET Corporation SHBC8S-0R6A0024V

    CMC 24UH 2A 2LN TH
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    DigiKey SHBC8S-0R6A0024V Bulk 78 1
    • 1 $2.52
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    Mouser Electronics SHBC8S-0R6A0024V 202
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    Newark SHBC8S-0R6A0024V Bulk 37 1
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    TME SHBC8S-0R6A0024V 200
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    Avnet Abacus SHBC8S-0R6A0024V 23 Weeks 700
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    KEMET Corporation PHBC8S-0R6A0043V

    CMC 43UH 2A 2LN TH
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    DigiKey PHBC8S-0R6A0043V Bulk 700
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    Mouser Electronics PHBC8S-0R6A0043V 140
    • 1 $3.11
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    Newark PHBC8S-0R6A0043V Bulk 49 1
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    IBS Electronics PHBC8S-0R6A0043V 200 319
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    KEMET Corporation SHBC8S-0R6A0067V

    CMC 67UH 2A 2LN TH
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    DigiKey SHBC8S-0R6A0067V Bulk 700
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    Mouser Electronics SHBC8S-0R6A0067V 109
    • 1 $3.52
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    • 100 $2.6
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    Newark SHBC8S-0R6A0067V Bulk 31 1
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    IBS Electronics SHBC8S-0R6A0067V 485 477
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    Find more HBC8 price and stock on Findchips.com

    HBC8 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HBC800 Absopulse Electronics Power, 800W Power Supply In 5 x 5 x 11.5 Package Original PDF
    HBC807 Hi-Sincerity Mocroelectronics PNP Epitaxial Planar Transistor Original PDF
    HBC817 Hi-Sincerity Mocroelectronics NPN Epitaxial Planar Transistor Original PDF
    HBC846 Hi-Sincerity Mocroelectronics NPN Epitaxial Planar Transistor Original PDF
    HBC847 Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Original PDF
    HBC848 Hi-Sincerity Mocroelectronics NPN Epitaxial Planar Transistor Original PDF
    HBC856 Hi-Sincerity Mocroelectronics PNP Epitaxial Planar Transistor Original PDF
    HBC857 Hi-Sincerity Mocroelectronics PNP Epitaxial Planar Transistor Original PDF
    HBC858 Hi-Sincerity Mocroelectronics PNP Epitaxial Planar Transistor Original PDF

    HBC8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HBC848

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6843 Issued Date : 1994.07.29 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6843 HBC848 HBC848 OT-23 Diss60 183oC 217oC 260oC 10sec

    HE6851

    Abstract: HBC858
    Text: HI-SINCERITY Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC858 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6851 HBC858 HBC858 OT-23 183oC 217oC 260oC HE6851

    800w inverter

    Abstract: HBC800 PFC1000 AC to DC converter 800W
    Text: HBC800 SERIES 800W POWER SUPPLY IN 5” X 5” X 11.5” PACKAGE • • • • • • Compact size Adjustable output Up to 800W of output power Full electronic protection Telecom quality Field-proven design topology The HBC800 Series is a highly compact AC/DC converter which uses established design techniques to ensure high


    Original     		PDF HBC800 2V/65A; 4V/33A 8V/16A. HBC800 800w inverter PFC1000 AC to DC converter 800W

    HBC807

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		PDF HE6830 HBC807 HBC807 OT-23 200oC 183oC 217oC 260oC 245oC

    HBC847

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6827 Issued Date : 1993.11.28 Revised Date : 2002.10.24 Page No. : 1/3 HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6827 HBC847 HBC847 OT-23

    HBC817

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		PDF HE6831 HBC817 HBC817 OT-23

    HBC817

    Abstract: hbc8
    Text: HI-SINCERITY Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		PDF HE6831 HBC817 HBC817 OT-23 183oC 217oC 260oC 10sec hbc8

    HE6851

    Abstract: HBC858
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2002.10.24 Page No. : 1/3 HBC858 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6851 HBC858 HBC858 OT-23 HE6851

    HBC847

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6827 Issued Date : 1993.11.28 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6827 HBC847 HBC847 OT-23 183oC 217oC 260oC

    HBC807

    Abstract: marking 9fb 9FC SOT23
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		PDF HE6830 HBC807 HBC807 OT-23 marking 9fb 9FC SOT23

    HBC857

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6829 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC857 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC857 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6829 HBC857 HBC857 OT-23

    HBC846

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6828 Issued Date : 1993.12.07 Revised Date : 2002.10.24 Page No. : 1/3 HBC846 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC846 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6828 HBC846 HBC846 OT-23

    HBC856

    Abstract: MARKING 9AB marking 9aa 9aa marking hbc8
    Text: HI-SINCERITY Spec. No. : HE6832 Issued Date : 1994.02.03 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC856 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6832 HBC856 HBC856 OT-23 183oC 217oC 260oC MARKING 9AB marking 9aa 9aa marking hbc8

    marking 8AA

    Abstract: HBC846
    Text: HI-SINCERITY Spec. No. : HE6828 Issued Date : 1993.12.07 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC846 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC846 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6828 HBC846 HBC846 OT-23 183oC 217oC 260oC marking 8AA

    HBC856

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6832 Issued Date : 1994.02.03 Revised Date : 2002.10.24 Page No. : 1/3 MICROELECTRONICS CORP. HBC856 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6832 HBC856 HBC856 OT-23

    HBC848

    Abstract: hbc8
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6843 Issued Date : 1994.07.29 Revised Date : 2002.10.24 Page No. : 1/3 HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6843 HBC848 HBC848 OT-23 hbc8

    88 kv cable

    Abstract: 30709 lighting fixture high temperature
    Text: Application: The first of its kind, the Dialight HB series LED High Bay luminaire was designed specifically to replace conventional high bay lighting fixtures in hazardous location applications. It’s low profile light weight design allows for increased mounting versatility and ease of installation.


    Original     		PDF 347-480VAC 240VAC MDTFSFSTHB001 88 kv cable 30709 lighting fixture high temperature

    hbd2c4n

    Abstract: HBDGCMN
    Text: SafeSite Series LED High Bay for Indoor and Outdoor Hazardous Locations Patent Pending Application The first of its kind, the Dialight SafeSite® Series LED High Bay luminaire was designed specifically to replace conventional high bay lighting fixtures in hazardous location applications. It’s low profile light weight design


    Original     		PDF Catalogs/Illumination/MDTFHZCHB001 MDTFHZCHB001 hbd2c4n HBDGCMN

    Untitled

    Abstract: No abstract text available
    Text: SafeSite LED High Bay - UL 844 for Indoor and Outdoor Hazardous Locations Patent Pending SafeSite® LED High Bay Features & Benefits • L70 rated for >100,000 hours @ 25°C • 5 & 10 year full performance warranty • Up to 104lm/W • Low T rating compared to


    Original     		PDF 104lm/W 00-277V 50/60Hz Catalogs/Illumination/MDTFHZCHB001 MDTFHZCHB001

    KTH-1000

    Abstract: HP8648C KTH1000 1855A HBC1505A 179DT
    Text: High Definition BNC Connectors _ The Shadow in the trade name for the best high definition BNC connector available at any price Shadow™ BNC connectors fit all standard broadcast cables and utilize most standard existing tooling. These connectors are made


    Original     		PDF BD17900 HBC1694A HP8648C, KTH-1000 HP8648C KTH1000 1855A HBC1505A 179DT

    schematic diagram usb flash ram

    Abstract: 1N9013 Alcor Micro micro pc 2002 schematic flash disk AU9321 flash card reader schematic mp3 player schematic diagram 10UF AU9320
    Text: AU9321 USB Compact Flash Card Reader Technical Reference Manual Revision 1.1 1997-2002 Alcor Micro Corp. All Rights Reserved Copyright Notice Copyright 1997 - 2002 Alcor Micro Corp. All Rights Reserved. Trademark Acknowledgements The company and product names mentioned in this document may be the trademarks or registered trademarks of their manufacturers.


    Original     		PDF AU9321 schematic diagram usb flash ram 1N9013 Alcor Micro micro pc 2002 schematic flash disk AU9321 flash card reader schematic mp3 player schematic diagram 10UF AU9320

    HB7C4M

    Abstract: No abstract text available
    Text: Dialight LED Lighting Fixture Catalog for Indoor and Outdoor Industrial and Hazardous Locations About Dialight Dialight LSE: DIA.L is leading the energy efficient LED lighting revolution around the world for industrial and hazardous areas. For more than 40 years, it has been committed to the development of LED lighting solutions that enable


    Original     		PDF MDTFSHCATX001 HB7C4M

    Untitled

    Abstract: No abstract text available
    Text: SafeSite Series LED High Bay for Indoor and Outdoor Hazardous Locations Patent Pending SafeSite® LED High Bay Features & Benefits • L70 rated for >100,000 hours @ 25°C • 5 & 10 year full performance warranty • Up to 102lm/W • Low T rating compared to


    Original     		PDF 102lm/W 00-277V 50/60Hz Catalogs/Illumination/MDTFHZCHB001 MDTFHZCHB001

    LB121A

    Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
    Text: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C


    OCR Scan     		PDF BT1815 HMBT1Q15 BT2222A BT2907A HBC807 BC817 BT5087 BT5088 BT8050 BT8550 LB121A TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV