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    HEMT 36 GHZ TRANSISTOR Search Results

    HEMT 36 GHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HEMT 36 GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HEMT 36 ghz transistor

    Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
    Text: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is a Ka/K band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with


    Original     		PDF EC2827 40GHz EC2827 18GHz 40GHz DSEC28277003 HEMT 36 ghz transistor low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor

    transistor zo 107

    Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
    Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		PDF OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor

    transistor zo 107

    Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
    Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		PDF OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor

    GaN hemt

    Abstract: Gan hemt transistor
    Text: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Features •       GaN depletion mode HEMT microwave transistor Common source configuration


    Original     		PDF MAGX-002735-040L00 300us MAGX-002735-040L00 GaN hemt Gan hemt transistor

    HEMT 36 ghz transistor

    Abstract: No abstract text available
    Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 HEMT 36 ghz transistor

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF

    MAGX-003135-120L00

    Abstract: 003135 EAR99
    Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Preliminary 28 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 003135

    Untitled

    Abstract: No abstract text available
    Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00

    EAR99

    Abstract: MAGX-002731-180L00
    Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V1 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-002731-180L00 300us EAR99 300us, 500us, MAGX-002731-180L00

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    Untitled

    Abstract: No abstract text available
    Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V2 26 Oct 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-002731-180L00 300us EAR99 300us,

    CGHV96050F2

    Abstract: No abstract text available
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F2 50-ohm, CGHV96050F2

    CGHV96050F2

    Abstract: CGHV96
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2

    40VPulse

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse

    transistor C1096

    Abstract: transistor C2271 c2271 transistor TRANSISTOR C1555 GaN ADS Gan hemt transistor x band c1096 CGH40010F CuMoCu GaAs HEMTs X band
    Text: WMC: Challenges in Model-Based HPA Design Application of Non-Linear Models in a range of challenging GaN HEMT Power Amplifier Designs Ray Pengelly, Brad Millon, Don Farrell, Bill Pribble and Simon Wood Cree Inc., Research Triangle Park, NC 27709 Outline • Attributes of GaN HEMTs


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1

    K 1358 fet transistor

    Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.


    Original     		PDF MGFC4419G MGFC4419G 12GHz K 1358 fet transistor FET K 1358 C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    CGHV96100F2

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


    Original     		PDF 3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"

    CGHV96100F1

    Abstract: taconic
    Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1

    RF3931

    Abstract: Gan on silicon transistor GaN TRANSISTOR RFMD HEMT GaN SiC EAR99 Gan on silicon Gan hemt transistor RFMD
    Text: Most Valuable Product The FirsT in a Family oF VersaTile high Power gan TransisTors R 40 FMD has developed a portfolio of Gallium Nitride GaN on Silicon Carbide (SiC) high power amplifiers and just recently released the first product from a family of discrete unmatched power transistors. The


    Original     		PDF RF3931 Gan on silicon transistor GaN TRANSISTOR RFMD HEMT GaN SiC EAR99 Gan on silicon Gan hemt transistor RFMD