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    onsemi HGTP7N60C3D

    IGBT 600V 14A 60W TO220AB
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    DigiKey HGTP7N60C3D Tube
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    Newark HGTP7N60C3D Bulk 800
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    Fairchild Semiconductor Corporation HGTP7N60C3D

    14 A, 600 V, N-CHANNEL IGBT, TO-220AB
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    Quest Components HGTP7N60C3D 32
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    INTRS HGTP 7N60C3D

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    Chip 1 Exchange HGTP 7N60C3D 644
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    HARTING Technology Group HGTP 7N60C3D

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    HGTP7N60C3D Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTP7N60C3D Fairchild Semiconductor 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Original PDF
    HGTP7N60C3D Fairchild Semiconductor 14 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diodes Original PDF
    HGTP7N60C3D Fairchild Semiconductor 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Original PDF
    HGTP7N60C3D Harris Semiconductor 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Original PDF
    HGTP7N60C3D Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTP7N60C3D Intersil 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Original PDF
    HGTP7N60C3D Intersil 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Scan PDF
    HGTP7N60C3D9A Intersil 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Scan PDF
    HGTP7N60C3D_NL Fairchild Semiconductor 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Original PDF
    HGTP7N60C3DR Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF

    HGTP7N60C3D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G7N60

    Abstract: G7N60C3D zener diode gem HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


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    HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS 150oC. TA49115. TA49057. G7N60 G7N60C3D zener diode gem HGT1S7N60C3DS9A TA49121 PDF

    8508 zener

    Abstract: g7N60C3D g7n60c HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS TM Data Sheet November 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


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    HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS 150oC. TA49115. TA49057. 8508 zener g7N60C3D g7n60c HGT1S7N60C3DS9A TA49121 PDF

    g7N60C3D

    Abstract: No abstract text available
    Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and


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    HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3D 150oC. TA49115. TA49057. 140nild g7N60C3D PDF

    G7N60C3D

    Abstract: G7N60C3 G7N60 DIODE 809 marking HGTP7N60C3D RHRD660 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original
    HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3D 150oC. TA49115. TA49057. 140ns G7N60C3D G7N60C3 G7N60 DIODE 809 marking HGTP7N60C3D RHRD660 HGT1S7N60C3DS HGT1S7N60C3DS9A TA49121 PDF

    G7N60C3D

    Abstract: G7N60 TA49121 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D
    Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC • • • • • EMITTER COLLECTOR GATE 600V Switching SOA Capability


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    HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-220AB 140ns 150oC O-262AA HGT1S7N60C3D G7N60C3D G7N60 TA49121 HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D PDF

    g7N60C3D

    Abstract: G7N60 G7N60C3 TA49115 TA49121 G7N60c hyperfast diode reference guide HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A
    Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and


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    HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3D 150oC. TA49115. TA49057. 140ns g7N60C3D G7N60 G7N60C3 TA49115 TA49121 G7N60c hyperfast diode reference guide HGT1S7N60C3DS HGT1S7N60C3DS9A PDF

    g7N60C3D

    Abstract: G7N60 HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet November 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


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    HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS 150oC. TA49115. TA49057. g7N60C3D G7N60 HGT1S7N60C3DS9A TA49121 PDF

    G7N60C3D

    Abstract: G7N60 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121 LD26
    Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


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    HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS 150oC. TA49115. TA49057. G7N60C3D G7N60 HGT1S7N60C3D HGT1S7N60C3DS9A TA49121 LD26 PDF

    g7N60C3D

    Abstract: G7N60 G7N60C3 C 679 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121 g7n60c
    Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = 25oC • • • • • EMITTER COLLECTOR GATE


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    HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-220AB 140ns 150oC O-262AA HGT1S7N60C3D g7N60C3D G7N60 G7N60C3 C 679 HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121 g7n60c PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


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    2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    P channel 600v 20a IGBT

    Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3
    Text: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


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    HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3 PDF

    INDUCTION HEATING

    Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
    Text: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)


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    HGT1N30N60A4D HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 SGF23N60UFD SGF15N60RUFD SGF40N60UF INDUCTION HEATING induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D PDF

    HGTP7N60B3D

    Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
    Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


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    HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    PDF

    igbt inverter welder schematic

    Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field


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    PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    3phase MOSFET INVERTER

    Abstract: 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw
    Text: Motor Drive Solutions Integrated modules SPM • Discrete components • Online tools n Pmech = M • � = M • 2 • � • _ = √3 • U • I • cos (�) • � 60s _ min –1 Optimize your motor designs: less energy, cost and time.


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    Power247TM, 3phase MOSFET INVERTER 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw PDF

    RURU8060

    Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
    Text: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers


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    FGS15N40L OT-227 HGT1N30N60A4D HGT1N40N60A4D O-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 RURU8060 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor PDF

    mosfet 1200V 40A

    Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
    Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA


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    LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    igbt 600V

    Abstract: g7n60c TA49121 G7N60C3D 50QL HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D LD26
    Text: HGTP7N60C3D, HGT1S7N60C3DS interrii J a n u a ry . m Data Sheet 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and H G T1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    OCR Scan
    HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS TA49115. TA49057. igbt 600V g7n60c TA49121 G7N60C3D 50QL HGT1S7N60C3D HGT1S7N60C3DS9A LD26 PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS H A F R R IS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features • . • • • • JEDEC TO-220AB 14A, 600V at TC = +25°C 600V Switching SOA Capability


    OCR Scan
    HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-220AB 140ns O-262AA HGT1S7N60C3D 1-800-4-HARRIS PDF

    g7N60C3D

    Abstract: T0-262AA
    Text: HGTP7N60C3D, HGT1S7N60C3D, j j ì HARRIS HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features • • • • • • JEDEC TO-22QAB 14A, 600V at Tc = +25°C 600V Switching SOA Capability


    OCR Scan
    HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-22QAB 140ns HGT1S7N60C3D HGT1S7N60C3DS 1-800-4-HARRIS g7N60C3D T0-262AA PDF

    7N60C3

    Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
    Text: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C


    OCR Scan
    7N60C3D, HGT1S7N60C3DS O-22QAB O-262AA HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS -800-4-H 7N60C3 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor PDF